SGS-THOMSON STP80N03L-06 Technical data

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STP80N03L-06

N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR

TYPE	VDSS	RDS(on)	ID
STP80N03L-06	30 V	< 0.006 Ω	80 A (*)

■TYPICAL RDS(on) = 0.005 Ω

■AVALANCHE RUGGED TECHNOLOGY

■100% AVALANCHE TESTED

■REPETITIVE AVALANCHE DATA AT 100oC

■HIGH CURRENT CAPABILITY

■175oC OPERATING TEMPERATURE

■HIGH dV/dt RUGGEDNESS

■APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■POWER MOTOR CONTROL

■DC-DC & DC-AC CONVERTERS

■SYNCRONOUS RECTIFICATION

TENTATIVE DATA

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Draingate Voltage (RGS = 20 kΩ)	30	V
VGS	Gate-source Voltage	± 15	V
ID	Drain Current (continuous) at Tc = 25 oC	80	A
ID	Drain Current (continuous) at Tc = 100 oC	60	A
IDM(∙)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25 oC	150	W
	Derating Factor	1	W/oC
dV/dt(1)	Peak Diode Recovery voltage slope	5	V/ns
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC

(∙) Pulse width limited by safe operating area

March 1996	1/5

STP80N03L-06

THERMAL DATA

Rthj-case	Thermal Resistance Junction-case			Max	1	oC/W
Rthj-amb	Thermal	Resistance	Junction-ambient	Max	62.5	oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	0.5	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300	oC

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	60	A
	(pulse width limited by Tj max, δ < 1%)
EAS	Single Pulse Avalanche Energy	600	mJ
	(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
EAR	Repetitive Avalanche Energy	150	mJ
	(pulse width limited by Tj max, δ < 1%)
IAR	Avalanche Current, Repetitive or Not-Repetitive	60	A
	(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0	30			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating			250	μA
	Drain Current (VGS = 0)	VDS = Max Rating x 0.8 Tc = 125 oC			1000	μA
IGSS	Gate-body Leakage	VGS = ± 15 V			± 100	nA
	Current (VDS = 0)

ON ( )

Symbol	Parameter	Test Conditions			Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 μA		1		2.5	V
RDS(on)	Static Drain-source On	VGS = 10V	ID = 40 A	Tc = 100oC		0.005	0.006	Ω
	Resistance	VGS = 10V	ID = 40 A				0.012	Ω
		VGS = 5V	ID = 40 A	Tc = 100oC		0.006	0.009	Ω
		VGS = 5V	ID = 40 A				0.018	Ω
ID(on)	On State Drain Current	VDS > ID(on) x RDS(on)max			80			A
		VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID(on) x RDS(on)max	ID = 10 A		35		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		6000		pF
Coss	Output Capacitance				1000		pF
Crss	Reverse Transfer				250		pF
	Capacitance

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