SGS-THOMSON STP7NB60, STP7NB60FP Technical data

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STP7NB60

STP7NB60FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE	VDSS		RDS(on)	ID
STP7NB60	600	V	< 1.2 Ω	7.2 A
STP7NB60FP	600	V	< 1.2 Ω	4.1 A

■TYPICAL RDS(on) = 1.0 Ω

■EXTREMELY HIGH dv/dt CAPABILITY

■100% AVALANCHE TESTED

■VERY LOW INTRINSIC CAPACITANCES

■GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITCH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

3	3
2	2
1	1
TO-220	TO-220FP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter	Value		Uni t
		ST P7NB60	STP7NB60FP
VDS	Drain-source Voltage (VGS = 0)		600	V
VDGR	Draingate Voltage (RGS = 20 kΩ)		600	V
VGS	Gate-source Voltage		± 30	V
ID	Drain Current (continuous) at Tc = 25 oC	7.2	4.1	A
ID	Drain Current (continuous) at Tc = 100 oC	4.5	2.6	A
IDM(•)	Drain Current (pulsed)	28.8	28.8	A
Pt ot	Total Dissipation at Tc = 25 o C	125	40	W
	Derating Factor	1.0	0.32	W/oC
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature		150	oC
(•) Pulse width limited by safe operating area		(1) ISD ≤ 7A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

March 1998

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STP7NB60/FP

THERMAL DATA

					TO-220	T O220-F P
Rt hj-ca se	Thermal Resistance Junction-case			Max	1.0	3.13	oC/W
Rt hjamb	Thermal	Resistance	Junction-ambient	Max	62.5		oC/W
Rthcsi nk	Thermal	Resistance	Case-sink	Typ	0.5		oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300		oC

AVALANCHE CHARACTERISTICS

Symb ol	Parameter	Max Valu e	Uni t
IAR	Avalanche Current, Repetitive or Not-Repetitive	7.2	A
	(pulse width limited by Tj max, δ < 1%)
EAS	Single Pulse Avalanche Energy	580	mJ
	(starting Tj = 25 oC, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ . Max.	Un it
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		600		V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating	Tc = 125 oC		1	μA
	Drain Current (VGS = 0)	VDS = Max Rating			50	μA
IGSS	Gate-body Leakage	VGS = ± 30 V			± 100	nA
	Current (VDS = 0)

ON ( )

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
VGS(th)	Gate Threshold Voltage	VDS = VGS	ID = 250 μA	3	4	5	V
RDS( on)	Static Drain-source On	VGS = 10V	ID = 3.6 A		1.0	1.2	Ω
	Resistance
ID(o n)	On State Drain Current	VDS > ID(on) x RDS(on) max		7.2			A
		VGS = 10 V

DYNAMIC

Symb ol	Parameter	Test Cond ition s		Mi n.	Typ .	Max.	Un it
gfs ( ) Forward		VDS > ID(on) x RDS(on) max	ID = 3.6 A	4	5.3		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		1250	1625	pF
Coss	Output Capacitance				165	223	pF
Crss	Reverse Transfer				16	22	pF
	Capacitance

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STP7NB60/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol	Parameter
td(on)	Turn-on Time
tr	Rise Time
Qg	Total Gate Charge
Qgs	Gate-Source Charge
Qgd	Gate-Drain Charge

Test Cond ition s		Mi n. Typ .	Max.	Un it
VDD = 300 V	ID = 3.6 A	18	27	ns
RG = 4.7 Ω	VGS = 10 V	8	12	ns
(see test circuit, figure 3)
VDD = 480 V	ID = 7.2 A VGS = 10 V	30	45	nC
		9.9		nC
		13.3		nC

SWITCHING OFF

Symb ol	Parameter
tr(Vof f)	Off-voltage Rise Time
tf	Fall Time
tc	Cross-over Time

Test Cond ition s		Mi n. Typ .	Max.	Un it
VDD = 480 V	ID = 7.2 A	8	12	ns
RG = 4.7 Ω	VGS = 10 V	5	8	ns
(see test circuit, figure 5)		15	23	ns

SOURCE DRAIN DIODE

Symb ol	Parameter		Test Cond ition s	Mi n. Typ . Max.	Un it
ISD	Source-drain	Current		7.2	A
ISDM (•)	Source-drain	Current		28.8	A

(pulsed)

VSD ( ) Forward On Voltage

trr Reverse Recovery

Time

Qrr Reverse Recovery

Charge

IRRM Reverse Recovery

Current

ISD = 7.2 A	VGS = 0		1.6	V
ISD = 7.2 A	di/dt = 100 A/μs	530		ns
VDD = 100 V	Tj = 150 o C			μC
(see test circuit, figure 5)		4.5
		17		A

( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

Safe Operating Area for TO-220

Safe Operating Area for TO-220FP

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