SGS-THOMSON STP7NB40, STP7NB40FP Technical data

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STP7NB40

STP7NB40FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH™ MOSFET

PRELIMINARY DATA

TYPE	VDSS	RDS(on)	ID
STP7NB40	400 V	< 0.9 W	7.0 A
STP7NB40FP	400 V	< 0.9 W	4.4 A

■TYPICAL RDS(on) = 0.75 Ω

■EXTREMELY HIGH dV/dt CAPABILITY

■100% AVALANCHE TESTED

■VERY LOW INTRINSIC CAPACITANCES

■GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITCH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

3	3
2	2
1	1
TO-220	TO-220FP

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter		Value			Unit
			STP7NB40		STP7NB40FP
VDS	Drain-source Voltage (VGS = 0)			400		V
VDGR	Draingate Voltage (RGS = 20 kW)			400		V
VGS	Gate-source Voltage			± 30		V
ID	Drain Current (continuous) at Tc = 25 oC		7		4.4	A
ID	Drain Current (continuous) at Tc = 100 oC		4.4		2.8	A
IDM(·)	Drain Current (pulsed)		28		28	A
Ptot	Total Dissipation at Tc = 25 oC		100		35	W
	Derating Factor		0.8		0.28	W/oC
dv/dt(1)	Peak Diode Recovery voltage slope		4.5		4.5	V/ns
VISO	Insulation Withstand Voltage (DC)		¾		2000	V
Tstg	Storage Temperature		-65 to 150			oC
Tj	Max. Operating Junction Temperature			150		oC
(∙) Pulse width	limited by safe operating area	(1) ISD ≤ 7A,	di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

January 1998	1/4

STP7NB40/FP

THERMAL DATA

					TO-220		TO-220FP
Rthj-case	Thermal Resistance Junction-case			Max	1.25		3.57	oC/W
Rthj-amb	Thermal	Resistance	Junction-ambient	Max	62.5			oC/W
Rthc-sink	Thermal	Resistance	Case-sink	Typ	0.5			oC/W
Tl	Maximum Lead Temperature For Soldering Purpose				300			oC

AVALANCHE CHARACTERISTICS

Symbol	Parameter	Max Value	Unit
IAR	Avalanche Current, Repetitive or Not-Repetitive	7	A
	(pulse width limited by Tj max, δ < 1%)
EAS	Single Pulse Avalanche Energy	300	mJ
	(starting Tj = 25 oC, ID = IAR, VDD = 50 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
V(BR)DSS	Drain-source	ID = 250 μA VGS = 0		400			V
	Breakdown Voltage
IDSS	Zero Gate Voltage	VDS = Max Rating	Tc = 125 oC			1	μA
	Drain Current (VGS = 0)	VDS = Max Rating				50	μA
IGSS	Gate-body Leakage	VGS = ± 30 V				± 100	nA
	Current (VDS = 0)

ON ( )

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
VGS(th)	Gate Threshold	VDS = VGS	ID = 250 μA	3	4	5	V
	Voltage
RDS(on)	Static Drain-source On	VGS = 10V	ID = 3.5 A		0.75	0.9	Ω
	Resistance
ID(on)	On State Drain Current	VDS > ID(on) x RDS(on)max		7			A
		VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID(on) x RDS(on)max	ID = 3.5 A	2.5	4.2		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VGS = 0		705	720	pF
Coss	Output Capacitance				132	175	pF
Crss	Reverse Transfer				17	25	pF
	Capacitance

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