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STP7NA60
STP7NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE |
VDSS |
R DS ( on) |
ID |
STP7NA60 |
600 V |
< 1 Ω |
7.2 A |
STP7NA60FI |
600 V |
< 1 Ω |
4.4 A |
■TYPICAL RDS(on) = 0.92 Ω
■± 30V GATE TO SOURCE VOLTAGE RATING
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW INTRINSIC CAPACITANCES
■GATE GHARGE MINIMIZED
■REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Unit |
|
|
STP7NA60 |
STP7NA60FI |
|
VD S |
Drain-source Voltage (VGS = 0) |
|
600 |
V |
VDG R |
Drain-gate Voltage (RG S = 20 kΩ) |
|
600 |
V |
VGS |
Gate-source Voltage |
|
± 30 |
V |
ID |
Drain Current (continuous) at Tc = 25 oC |
7.2 |
4.4 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
4.6 |
2.8 |
A |
ID M(•) |
Drain Current (pulsed) |
29 |
29 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
45 |
W |
|
Derating Factor |
1 |
0.36 |
W/oC |
VISO |
Insulation Withstand Voltage (DC) |
|
2000 |
V |
Tstg |
Storage Temperature |
-65 to 150 |
oC |
|
Tj |
Max. Operating Junction Temperature |
|
150 |
oC |
(•) Pulse width limited by safe operating area
November 1996 |
1/10 |
STP7NA60/FI
THERMAL DATA
|
|
|
|
|
TO-220 |
ISOWATT220 |
|
Rthj-cas e |
Thermal Resistance Junction-case |
Max |
1 |
2.78 |
oC/W |
||
Rthjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
|
62.5 |
oC/W |
Rt hcsin k |
Thermal |
Resistance |
Case-sink |
Typ |
|
0.5 |
oC/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
|
300 |
oC |
AVALANCHE CHARACTERISTICS
Symbol
IA R
EAS
EAR
IA R
Parameter |
Max Value |
Unit |
Avalanche Current, Repetitive or Not-Repetitive |
7.2 |
A |
(pulse width limited by Tj max, δ < 1%) |
|
|
Single Pulse Avalanche Energy |
260 |
mJ |
(starting Tj = 25 oC, ID = IAR, VD D = 50 V) |
|
|
Repetitive Avalanche Energy |
11 |
mJ |
(pulse width limited by Tj max, δ < 1%) |
|
|
Avalanche Current, Repetitive or Not-Repetitive |
4.6 |
A |
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
V( BR)DSS |
Drain-source |
ID = 250 μA VG S = 0 |
600 |
|
V |
|
Breakdown Voltage |
|
|
|
|
IDS S |
Zero Gate Voltage |
VDS = Max Rating |
|
25 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating x 0.8 Tc = 125 oC |
|
250 |
μA |
IG SS |
Gate-body Leakage |
VGS = ± 30 V |
|
± 100 |
nA |
|
Current (VD S = 0) |
|
|
|
|
ON ( )
Symbol
VG S(th)
RDS( on)
ID( on)
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
2.25 |
3 |
3.75 |
V |
Static Drain-source On |
VGS = 10V |
ID = 3.5 A |
|
0.92 |
1 |
Ω |
Resistance |
|
|
|
|
|
|
On State Drain Current |
VDS > ID( on) x RD S(on) max |
7.2 |
|
|
A |
|
|
VGS = 10 V |
|
|
|
|
|
DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
gfs ( ) |
Forward |
VDS > ID( on) x RD S(on) max |
ID = 3.5 A |
4 |
5.5 |
|
S |
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VG S = 0 |
|
1300 |
1690 |
pF |
Coss |
Output Capacitance |
|
|
|
175 |
230 |
pF |
Crss |
Reverse Transfer |
|
|
|
45 |
60 |
pF |
|
Capacitance |
|
|
|
|
|
|
2/10
STP7NA60/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. Typ. Max. Unit |
||||
td(on) |
Turn-on Time |
VDD = 300 V |
ID = 3.5 A |
|
20 |
28 |
ns |
tr |
Rise Time |
RG = 4.7 Ω |
VGS = 10 V |
25 |
35 |
ns |
|
|
|
(see test circuit, figure 3) |
|
|
|
||
(di/dt)on |
Turn-on Current Slope |
VDD = 480 V |
ID = 3.5 A |
|
200 |
|
A/μs |
|
|
RG = 4.7 Ω |
VGS = 10 |
V |
|
|
|
|
|
(see test circuit, figure 5) |
|
|
|
||
Qg |
Total Gate Charge |
VDD = 480 V |
ID = 7 A |
VGS = 10 V |
58 |
82 |
nC |
Qgs |
Gate-Source Charge |
|
|
|
9 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
|
27 |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
tr(Vof f) |
Off-voltage Rise Time |
VDD = 480 V |
ID = 7 A |
|
16 |
23 |
ns |
tf |
Fall Time |
RG = 15 Ω |
VGS = 10 V |
|
16 |
23 |
ns |
tc |
Cross-over Time |
(see test circuit, figure 5) |
|
26 |
37 |
ns |
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
|
IS D |
Source-drain Current |
|
|
|
7.2 |
A |
ISDM(•) |
Source-drain Current |
|
|
|
29 |
A |
|
(pulsed) |
|
|
|
|
|
VS D ( ) |
Forward On Voltage |
ISD = 7.2 A |
VGS = 0 |
|
1.6 |
V |
trr |
Reverse Recovery |
ISD = 7.2 A |
di/dt = 100 A/μs |
|
600 |
ns |
|
Time |
VDD = 100 V |
Tj = 150 oC |
|
|
μC |
Qrr |
Reverse Recovery |
(see test circuit, figure 5) |
|
10 |
||
|
Charge |
|
|
|
|
|
IRRM |
Reverse Recovery |
|
|
|
33 |
A |
|
Current |
|
|
|
|
|
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % |
|
|
|
|
||
(•) Pulse width limited by safe operating area |
|
|
|
|
|
|
Safe Operating Areas for TO-220 |
|
Safe Operating Areas for ISOWATT220 |
|
3/10