!
STP6NA80
STP6NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE |
VDSS |
R DS ( on) |
ID |
STP6NA80 |
800 V |
< 1.9 Ω |
5.7 A |
STP6NA80FI |
800 V |
< 1.9 Ω |
3.4 A |
■TYPICAL RDS(on) = 1.68 Ω
■± 30V GATE TO SOURCE VOLTAGE RATING
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW INTRINSIC CAPACITANCES
■GATE GHARGE MINIMIZED
■REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SWITCH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
3 |
3 |
2 |
2 |
1 |
1 |
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
|
Value |
Unit |
|
|
STP6NA80 |
STP6NA80FI |
|
VD S |
Drain-source Voltage (VGS = 0) |
|
800 |
V |
VDG R |
Drain-gate Voltage (RG S = 20 kΩ) |
|
800 |
V |
VGS |
Gate-source Voltage |
|
± 30 |
V |
ID |
Drain Current (continuous) at Tc = 25 oC |
5.7 |
3.4 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
3.6 |
2.1 |
A |
ID M(•) |
Drain Current (pulsed) |
23 |
23 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
125 |
45 |
W |
|
Derating Factor |
1 |
0.36 |
W/oC |
VISO |
Insulation Withstand Voltage (DC) |
|
2000 |
V |
Tstg |
Storage Temperature |
-65 to 150 |
oC |
|
Tj |
Max. Operating Junction Temperature |
|
150 |
oC |
(•) Pulse width limited by safe operating area
November 1996 |
1/10 |
STP6NA80/FI
THERMAL DATA
|
|
|
|
|
TO-220 |
ISOWATT220 |
|
Rthj-cas e |
Thermal Resistance Junction-case |
Max |
1 |
2.78 |
oC/W |
||
Rthjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
|
62.5 |
oC/W |
Rt hcsin k |
Thermal |
Resistance |
Case-sink |
Typ |
|
0.5 |
oC/W |
Tl |
Maximum Lead Temperature For Soldering Purpose |
|
300 |
oC |
AVALANCHE CHARACTERISTICS
Symbol
IA R
EAS
EAR
IA R
Parameter |
Max Value |
Unit |
Avalanche Current, Repetitive or Not-Repetitive |
5.7 |
A |
(pulse width limited by Tj max, δ < 1%) |
|
|
Single Pulse Avalanche Energy |
165 |
mJ |
(starting Tj = 25 oC, ID = IAR, VD D = 50 V) |
|
|
Repetitive Avalanche Energy |
6.5 |
mJ |
(pulse width limited by Tj max, δ < 1%) |
|
|
Avalanche Current, Repetitive or Not-Repetitive |
3.6 |
A |
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
V( BR)DSS |
Drain-source |
ID = 250 μA VG S = 0 |
800 |
|
V |
|
Breakdown Voltage |
|
|
|
|
IDS S |
Zero Gate Voltage |
VDS = Max Rating |
|
25 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating x 0.8 Tc = 125 oC |
|
250 |
μA |
IG SS |
Gate-body Leakage |
VGS = ± 30 V |
|
± 100 |
nA |
|
Current (VD S = 0) |
|
|
|
|
ON ( )
Symbol
VG S(th)
RDS( on)
ID( on)
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
2.25 |
3 |
3.75 |
V |
Static Drain-source On |
VGS = 10V |
ID = 3 A |
|
1.68 |
1.9 |
Ω |
Resistance |
|
|
|
|
|
|
On State Drain Current |
VDS > ID( on) x RD S(on) max |
6 |
|
|
A |
|
|
VGS = 10 V |
|
|
|
|
|
DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
gfs ( ) |
Forward |
VDS > ID( on) x RD S(on) max |
ID = 3 A |
4 |
6.1 |
|
S |
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VG S = 0 |
|
1330 |
1750 |
pF |
Coss |
Output Capacitance |
|
|
|
160 |
210 |
pF |
Crss |
Reverse Transfer |
|
|
|
40 |
55 |
pF |
|
Capacitance |
|
|
|
|
|
|
2/10
STP6NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. Typ. Max. Unit |
|||
td(on) |
Turn-on Time |
VDD = 400 V |
ID = 3 A |
35 |
45 |
ns |
tr |
Rise Time |
RG = 47 Ω |
VGS = 10 V |
95 |
125 |
ns |
|
|
(see test circuit, figure 3) |
|
|
|
|
(di/dt)on |
Turn-on Current Slope |
VDD = 640 V |
ID = 6 A |
170 |
|
A/μs |
|
|
RG = 47 Ω |
VGS = 10 V |
|
|
|
|
|
(see test circuit, figure 5) |
|
|
|
|
Qg |
Total Gate Charge |
VDD = 640 V |
ID = 6 A VGS = 10 V |
58 |
78 |
nC |
Qgs |
Gate-Source Charge |
|
|
8 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
27 |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
tr(Vof f) |
Off-voltage Rise Time |
VDD = 640 V |
ID = 6 A |
|
90 |
120 |
ns |
tf |
Fall Time |
RG = 47 Ω |
VGS = 10 V |
|
25 |
35 |
ns |
tc |
Cross-over Time |
(see test circuit, figure 5) |
|
125 |
165 |
ns |
SOURCE DRAIN DIODE
Symbol |
Parameter |
|
Test Conditions |
Min. |
Typ. Max. |
Unit |
IS D |
Source-drain Current |
|
|
|
5.7 |
A |
ISDM(•) |
Source-drain Current |
|
|
|
23 |
A |
|
(pulsed) |
|
|
|
|
|
VS D ( ) |
Forward On Voltage |
ISD = 6 A |
VGS = 0 |
|
1.6 |
V |
trr |
Reverse Recovery |
ISD = 6 A |
di/dt = 100 A/μs |
|
850 |
ns |
|
Time |
VDD = 100 V Tj = 150 oC |
|
|
μC |
|
Qrr |
Reverse Recovery |
(see test circuit, figure 5) |
|
15 |
||
|
Charge |
|
|
|
|
|
IRRM |
Reverse Recovery |
|
|
|
35 |
A |
|
Current |
|
|
|
|
|
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % |
|
|
|
|
||
(•) Pulse width limited by safe operating area |
|
|
|
|
|
|
Safe Operating Areas for TO-220 |
|
Safe Operating Areas for ISOWATT220 |
|
3/10