SGS-THOMSON STP6NA60, STP6NA60FI Technical data

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STP6NA60

STP6NA60FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE	VDSS	R DS ( on)	ID
STP6NA60	600 V	< 1.2 Ω	6.5 A
STP6NA60FI	600 V	< 1.2 Ω	3.9 A

■TYPICAL RDS(on) = 1 Ω

■± 30V GATE TO SOURCE VOLTAGE RATING

■100% AVALANCHE TESTED

■REPETITIVE AVALANCHE DATA AT 100oC

■LOW INTRINSIC CAPACITANCES

■GATE GHARGE MINIMIZED

■REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS

■HIGH CURRENT, HIGH SPEED SWITCHING

■SWITCH MODE POWER SUPPLIES (SMPS)

■DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

3	3
2	2
1	1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

Symbol	Parameter		Value	Unit
		STP6NA60	STP6NA60FI
VD S	Drain-source Voltage (VGS = 0)		600	V
VDG R	Drain-gate Voltage (RG S = 20 kΩ)		600	V
VGS	Gate-source Voltage		± 30	V
ID	Drain Current (continuous) at Tc = 25 oC	6.5	3.9	A
ID	Drain Current (continuous) at Tc = 100 oC	4.3	2.6	A
ID M(•)	Drain Current (pulsed)	26	26	A
Ptot	Total Dissipation at Tc = 25 oC	125	45	W
	Derating Factor	1	0.36	W/oC
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature		150	oC

(•) Pulse width limited by safe operating area

November 1996

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STP6NA60/FI

THERMAL DATA

					TO-220	ISOWATT220
Rthj-cas e	Thermal Resistance Junction-case			Max	1	2.78	oC/W
Rthjamb	Thermal	Resistance	Junction-ambient	Max		62.5	oC/W
Rt hcsin k	Thermal	Resistance	Case-sink	Typ		0.5	oC/W
Tl	Maximum Lead Temperature For Soldering Purpose					300	oC

AVALANCHE CHARACTERISTICS

Symbol

IA R

EAS

EAR

IA R

Parameter	Max Value	Unit
Avalanche Current, Repetitive or Not-Repetitive	6.5	A
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy	215	mJ
(starting Tj = 25 oC, ID = IAR, VD D = 50 V)
Repetitive Avalanche Energy	9.5	mJ
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive	4.3	A
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF

Symbol	Parameter	Test Conditions	Min.	Typ. Max.	Unit
V( BR)DSS	Drain-source	ID = 250 μA VG S = 0	600		V
	Breakdown Voltage
IDS S	Zero Gate Voltage	VDS = Max Rating		25	μA
	Drain Current (VGS = 0)	VDS = Max Rating x 0.8 Tc = 125 oC		250	μA
IG SS	Gate-body Leakage	VGS = ± 30 V		± 100	nA
	Current (VD S = 0)

ON ( )

Symbol

VG S(th)

RDS( on)

ID( on)

Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Gate Threshold Voltage	VDS = VGS	ID = 250 μA	2.25	3	3.75	V
Static Drain-source On	VGS = 10V	ID = 3 A		1	1.2	Ω
Resistance
On State Drain Current	VDS > ID( on) x RD S(on) max		6.5			A
	VGS = 10 V

DYNAMIC

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
gfs ( )	Forward	VDS > ID( on) x RD S(on) max	ID = 3 A	3.5	5.6		S
	Transconductance
Ciss	Input Capacitance	VDS = 25 V f = 1 MHz	VG S = 0		1150	1550	pF
Coss	Output Capacitance				155	210	pF
Crss	Reverse Transfer				40	55	pF
	Capacitance

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STP6NA60/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol	Parameter	Test Conditions		Min. Typ. Max. Unit
td(on)	Turn-on Time	VDD = 300 V	ID = 3 A	35	50	ns
tr	Rise Time	RG = 47 Ω	VGS = 10 V	90	125	ns
		(see test circuit, figure 3)
(di/dt)on	Turn-on Current Slope	VDD = 480 V	ID = 6 A	200		A/μs
		RG = 47 Ω	VGS = 10 V
		(see test circuit, figure 5)
Qg	Total Gate Charge	VDD = 480 V	ID = 3 A VGS = 10 V	54	75	nC
Qgs	Gate-Source Charge			8		nC
Qgd	Gate-Drain Charge			23		nC

SWITCHING OFF

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
tr(Vof f)	Off-voltage Rise Time	VDD = 480 V	ID = 6 A		80	110	ns
tf	Fall Time	RG = 47 Ω	VGS = 10 V		20	30	ns
tc	Cross-over Time	(see test circuit, figure 5)			115	155	ns

SOURCE DRAIN DIODE

Symbol	Parameter	Test Conditions		Min.	Typ. Max.	Unit
IS D	Source-drain Current				6.5	A
ISDM(•)	Source-drain Current				26	A
	(pulsed)
VS D ( )	Forward On Voltage	ISD = 6.5 A	VGS = 0		1.6	V
trr	Reverse Recovery	ISD = 6 A di/dt = 100 A/μs			600	ns
	Time	VDD = 100 V	Tj = 150 oC			μC
Qrr	Reverse Recovery	(see test circuit, figure 5)			9
	Charge
IRRM	Reverse Recovery				30	A
	Current
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas for TO-220			Safe Operating Areas for ISOWATT220

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