SGS-THOMSON STP6N25, STP6N25FI Technical data
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N - CHANNEL ENHANCEMENT MODE
STP6N25
STP6N25FI
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE V
STP 6N25
STP 6N25FI
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ APPLICATION ORIENTED
DS(on)
DSS
250 V
250 V
= 0.7 Ω
R
DS(on)
<1 Ω
<1 Ω
I
D
6A
4A
o
C
CHARACTERIZATION
APPLICATIONS
■ HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ INDUSTRIALACTUATORS
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■ PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
1
TO-220 ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
3
2
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STP6N25 STP6N25FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
June 1993
Drain - s ource Voltage (VGS=0) 250 V
DS
Drain- gate Voltage (RGS=20kΩ)250V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC64A
I
D
Drain Current (continuous) at Tc=100oC42.6A
I
D
(•) Drain Current (pulsed) 24 24 A
Total Di ssipation at Tc=25oC7035W
tot
Derat ing Factor 0.56 0.28 W/
Ins ulation Withs t and Voltage (DC) 2000
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
o
o
C
C
C
1/10
STP6N25/FI
THERMAL DATA
TO-220 ISOW ATT 220
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e M ax 1.79 3.57
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Sol dering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limit ed by Tjmax, δ <1%)
62.5
0.5
300
6A
40 mJ
10 mJ
4A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 250 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
= ± 20 V ± 10 0 nA
V
GS
250
1000µAµA
ON (∗)
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n
Resistance
On State Drain Current VDS>I
VGS=10V ID=3A
VGS=10V ID=3A Tc=100oC
D(on)xRDS(on)max
0.7 1
2
6A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=3A 1.5 3.5 S
VDS=25V f=1MHz VGS=0 500
85
15
700
120
30
Ω
Ω
pF
pF
pF
2/10
STP6N25/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndi tions Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=200V ID=6A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=125V ID=3A
RG=50 Ω VGS=10V
35
70
(see test circuit, figure 3)
220 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)
VDD= 200 V ID=6A VGS=10V 20
6
7
VDD=200V ID=6A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
40
25
70
50
100
30 nC
60
35
100
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndi tions Mi n. Ty p. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
6
24
(pulsed)
V
(∗) Forwar d On V oltage ISD=6A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD=6A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
180
1.1
Charge
I
RRM
Reverse Recovery
12
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
A
A
ns
µC
A
3/10
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