SGS-THOMSON STP20N10 Technical data
STP20N10
STP20N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE |
VDSS |
R DS ( on) |
ID |
STP20N10 |
100 V |
< 0.12 Ω |
20 A |
■TYPICAL RDS(on) = 0.09 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■LOW GATE CHARGE
■HIGH CURRENT CAPABILITY
■175oC OPERATING TEMPERATURE
■APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■HIGH CURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAY DRIVERS
■REGULATORS
■DC-DC & DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Symbol |
Parameter |
Value |
Unit |
VD S |
Drain-source Voltage (VGS = 0) |
100 |
V |
VDG R |
Draingate Voltage (RGS = 20 kΩ) |
100 |
V |
VGS |
Gate-source Voltage |
± 20 |
V |
ID |
Drain Current (continuous) at Tc = 25 oC |
20 |
A |
ID |
Drain Current (continuous) at Tc = 100 oC |
14 |
A |
ID M(•) |
Drain Current (pulsed) |
80 |
A |
Ptot |
Total Dissipation at Tc = 25 oC |
105 |
W |
|
Derating Factor |
0.7 |
W/oC |
Tstg |
Storage Temperature |
-65 to 175 |
oC |
Tj |
Max. Operating Junction Temperature |
175 |
oC |
(•) Pulse width limited by safe operating area
December 1996 |
1/9 |
STP20N10
THERMAL DATA
Rthj-cas e |
Thermal Resistance Junction-case |
Max |
1.43 |
oC/W |
||
Rthjamb |
Thermal |
Resistance |
Junction-ambient |
Max |
62.5 |
oC/W |
Rthjamb |
Thermal |
Resistance |
Case-sink |
Typ |
0.5 |
oC/W |
Tl |
Maximum |
Lead Temperature For Soldering Purpose |
|
300 |
oC |
|
AVALANCHE CHARACTERISTICS
Symbol
IA R
EAS
EAR
IA R
Parameter |
Max Value |
Unit |
Avalanche Current, Repetitive or Not-Repetitive |
20 |
A |
(pulse width limited by Tj max, δ < 1%) |
|
|
Single Pulse Avalanche Energy |
60 |
mJ |
(starting Tj = 25 oC, ID = IAR, VD D = 25 V) |
|
|
Repetitive Avalanche Energy |
15 |
mJ |
(pulse width limited by Tj max, δ < 1%) |
|
|
Avalanche Current, Repetitive or Not-Repetitive |
14 |
A |
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%) |
|
|
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
V( BR)DSS |
Drain-source |
ID = 250 μA VG S = 0 |
100 |
|
V |
|
Breakdown Voltage |
|
|
|
|
IDS S |
Zero Gate Voltage |
VDS = Max Rating |
|
1 |
μA |
|
Drain Current (VGS = 0) |
VDS = Max Rating x 0.8 Tc = 125 oC |
|
10 |
μA |
IG SS |
Gate-body Leakage |
VGS = ± 20 V |
|
± 100 |
nA |
|
Current (VD S = 0) |
|
|
|
|
ON ( )
Symbol
VG S(th)
RDS( on)
ID( on)
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
Gate Threshold Voltage |
VDS = VGS |
ID = 250 μA |
2 |
2.9 |
4 |
V |
Static Drain-source On |
VGS = 10V |
ID = 10 A |
|
0.09 |
0.12 |
Ω |
Resistance |
|
|
|
|
|
|
On State Drain Current |
VDS > ID( on) x RD S(on) max |
20 |
|
|
A |
|
|
VGS = 10 V |
|
|
|
|
|
DYNAMIC
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
gfs ( ) |
Forward |
VDS > ID( on) x RD S(on) max |
ID = 10 A |
7 |
12 |
|
S |
|
Transconductance |
|
|
|
|
|
|
Ciss |
Input Capacitance |
VDS = 25 V f = 1 MHz |
VG S = 0 |
|
800 |
1100 |
pF |
Coss |
Output Capacitance |
|
|
|
200 |
300 |
pF |
Crss |
Reverse Transfer |
|
|
|
40 |
60 |
pF |
|
Capacitance |
|
|
|
|
|
|
2/9
STP20N10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol |
Parameter |
Test Conditions |
Min. Typ. Max. Unit |
|||
td(on) |
Turn-on Time |
VDD = 30 V |
ID = 3 A |
25 |
35 |
ns |
tr |
Rise Time |
RG = 50 Ω |
VGS = 10 V |
75 |
110 |
ns |
|
|
(see test circuit, figure 3) |
|
|
|
|
(di/dt)on |
Turn-on Current Slope |
VDD = 80 V |
ID = 20 A |
300 |
|
A/μs |
|
|
RG = 50 Ω |
VGS = 10 V |
|
|
|
|
|
(see test circuit, figure 5) |
|
|
|
|
Qg |
Total Gate Charge |
VDD = 80 V |
ID = 20 A VGS = 10 V |
30 |
45 |
nC |
Qgs |
Gate-Source Charge |
|
|
9 |
|
nC |
Qgd |
Gate-Drain Charge |
|
|
11 |
|
nC |
SWITCHING OFF
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Unit |
|
tr(Vof f) |
Off-voltage Rise Time |
VDD = 80 V |
ID = 20 A |
|
70 |
100 |
ns |
tf |
Fall Time |
RG = 50 Ω |
VGS = 10 V |
|
55 |
80 |
ns |
tc |
Cross-over Time |
(see test circuit, figure 5) |
|
130 |
185 |
ns |
|
SOURCE DRAIN DIODE
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. Max. |
Unit |
|
IS D |
Source-drain Current |
|
|
|
20 |
A |
ISDM(•) |
Source-drain Current |
|
|
|
80 |
A |
|
(pulsed) |
|
|
|
|
|
VS D ( ) |
Forward On Voltage |
ISD = 20 A |
VG S = 0 |
|
1.6 |
V |
trr |
Reverse Recovery |
ISD = 20 A |
di/dt = 100 A/μs |
|
125 |
ns |
|
Time |
VDD = 20 V |
Tj = 150 oC |
|
|
μC |
Qrr |
Reverse Recovery |
(see test circuit, figure 5) |
|
0.44 |
||
|
Charge |
|
|
|
|
|
IRRM |
Reverse Recovery |
|
|
|
7 |
A |
|
Current |
|
|
|
|
|
( ) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Safe Operating Areas Thermal Impedance
3/9
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