SGS-THOMSON SD1541-01 Technical data

SD1541-01

SD1541-01

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.DESIGNED FOR HIGH POWER PULSED

.IFF AND DME APPLICATIONS

.400 (min.) DME 1025 - 1150 MHz

.6.5 dB MIN. GAIN

.REFRACTORY GOLD METALLIZATION

EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR

.RELIABILITY AND RUGGEDNESS

30:1 LOAD VSWR CAPABILITY AT

.SPECIFICIED OPERATING CONDITIONS

INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION

.400 x .500 2LFL (M112) hermetically sealed

ORDER CODE	BRANDING
SD1541-01	SD1541-1

PIN CONNECTION

DESCRIPTION
The SD1541-01 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1541-
01 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ce-
ramic package with internal input/output matching,	1.	Collector	3.	Emitter
resulting in improved broadband performance and	2.	Base	4.	Base

a low thermal resistance.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	65	V
VCES	Collector-Emitter Voltage	65	V
VEBO	Emitter-Base Voltage	3.5	V
IC	Device Current	22	A
PDISS	Power Dissipation	1458	W
TJ	Junction Temperature	+200	°C
TSTG	Storage Temperature	− 65 to +150	°C
THERMAL DATA
RTH(j-c)	Junction-Case Thermal Resistance	0.12	°C/W

November 1992

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SD1541-01

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

Symbol		Test Conditions			Value		Unit
				Min.	Typ.	Max.
BVCBO	IC = 25mA	IE = 0mA		65	Ð	Ð	V
BVCES	IC = 50mA	VBE = 0V		65	Ð	Ð	V
BVEBO	IE = 10mA	IC = 0mA		3.5	Ð	Ð	V
ICES	VCE = 50V	IE = 0mA		Ð	Ð	25	mA
hFE	VCE = 5V	IC = .25A		5	Ð	200	Ð
DYNAMIC
Symbol		Test Conditions			Value		Unit
				Min.	Typ.	Max.
POUT	f = 1025 Ð 1150MHz P IN = 90 W		VCE = 50 V	400	Ð	Ð	W
GP	f = 1025 Ð 1150MHz P IN = 90 W		VCE = 50 V	6.5	Ð	Ð	dB
Note: Pulse W idth = 10μSec, Duty Cycle = 1%
This device i s sui table for use under other pulse width/duty cycle conditions.
Please contact the factory for specific appli cations assi stance.

TYPICAL PERFORMANCE

POWER OUTPUT vs POWER INPUT

POWER OUTPUT vs FREQUENCY

2/5