SGS-THOMSON SD1528-08 Technical data

1528-8

SD1528-08

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.DESIGNED FOR HIGH POWER PULSED

.IFF, DME, TACAN APPLICATIONS

.20 WATTS (typ.) IFF 1030 - 1090 MHz

.15 WATTS (min.) DME 1025 - 1150 MHz

.15 WATTS (typ.) TACAN 960 - 1215 MHz

.10 dB MIN. GAIN

.REFRACTORY GOLD METALLIZATION

EMITTER BALLASTING AND LOW

.THERMAL RESISTANCE

20:1 LOAD VSWR CAPABILITY AT

.SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION

.250 SQ. 2LFL (M105) hermetically sealed

ORDER CODE	BRANDING
SD1528-08	1528-8

PIN CONNECTION

DESCRIPTION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 is packaged in the .250º input matched
hermetic stripline flange package resulting in im-		1. Collector	3. Emitter
proved broadband performance and a low thermal		2. Base
resistance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol	Parameter		Value	Unit
VCBO	Collector-Base Voltage		65	V
VCEO	Collector-Emitter Voltage		65	V
VEBO	Emitter-Base Voltage		3.5	V
IC	Device Current		1.5	A
PDISS	Power Dissipation		87.5	W
TJ	Junction Temperature		+200	°C
TSTG	Storage Temperature	− 65 to +150		°C
THERMAL DATA
RTH(j-c)	Junction-Case Thermal Resistance		2.0	°C/W

November 1992

1/4

SD1528-08

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)

STATIC

Symbol		Test Conditions		Value		Unit
			Min.	Typ.	Max.
BVCBO	IC = 10mA	IE = 0mA	65	Ð	Ð	V
BVCES	IC = 25mA	VBE = 0V	65	Ð	Ð	V
BVEBO	IE = 1mA	IC = 0mA	3.5	Ð	Ð	V
ICES	VCE = 50V	IE = 0mA	Ð	Ð	2	mA

DYNAMIC

Symbol	Test Conditions	Value
		Unit
	Min.	Typ. Max.

POUT	f = 1025 Ð 1150MHz P IN = 1.5 W	VCE = 50 V	15	Ð	Ð	W
GP	f = 1025 Ð 1150MHz P IN = 1.5 W	VCE = 50 V	10	Ð	Ð	dB
ηc	f = 1025 Ð 1150MHz P IN = 1.5 W	VCE = 50 V	30	Ð	Ð	%

Note: Pulse W idth = 10μSec, Duty Cycle = 1%

TYPICAL PERFORMANCE

POWER OUTPUT vs POWER INPUT

POWER OUTPUT vs FREQUENCY

2/4