SGS-THOMSON MSC80186 Technical data

查询MSC80186供应商
.EMITTER BALLASTED
.CLASS A LINEAR OPERATION
.COMMON EMITTER
CONDITIONS
.ft 3.2 GHz TYPICAL
.NOISE FIGURE 12.5 dB @ 2 GHz
.P
= 30.0 dBm MIN.
OUT
MSC80186
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
.230 4L STUD (S027)
hermetical ly sealed
ORDER CO DE
MSC80186
BRANDING
80186
PIN CONNECTION
DESCRIPTION
The MSC80185 is a hermetically sealed NPN power tra nsistor featur ing a unique m atrix struc ture. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
T
DISS
I
V
T
STG
C CE
J
Power Dissipation (see Safe Area) W Device Bias Current 500 mA Collector-Emitter Bias Voltage* 20 V Junction Temperature 200 Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +200
°
C
°
C
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
October 1992
Junction-Case Thermal Resistance* 17
°
C/W
1/6
MSC80186
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV BV BV
I
CBO EBO CEO
CEO
h
FE
IC = 1mA IE = 0mA 50 V IE = 1mA IC = 0mA 3.5 V IC = 5mA IB = 0mA 20 V VCE = 18V 1. 0 mA VCE = 5V IC = mA 15 120
DYNAMIC
Symbol Test Conditions
GP*f = 2.0 GHz P
GP*f = 2.0 GHz P
C
OB
* Note: VCE = 18V
f = 1 MHz VCB = 28 V 5.0 pF
IC
220mA
=
= 30.0 dBm 7.0 9.0 dB
OUT
30.0 dBm
=
OUT
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
P
= 10 dB 1 d B
OUT
Unit
Unit
2/6
Loading...
+ 4 hidden pages