SGS-THOMSON M54HCT86, M74HCT86 Technical data

查询M54HCT86供应商
.HIGH SPEED
tPD= 15 ns(TYP.) ATVCC=5V
.LOWPOWER DISSIPATION
ICC=1µA(MAX.) AT TA=25°C
.COMPATIBLE WITH TTL OUTPUTS
VIH= 2V(MIN.) VIL= 0.8V (MAX)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA (MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.PIN ANDFUNCTION COMPATIBLE
WITH 54/74LS86
DESCRIPTION
The M54/74HCT86 is a high speed CMOS QUAD EXCLUSIVE OR GATE fabricated in silicon gate C2MOS technology.
It has the same high speed performance of LSTTL combined with true CMOSlow powerconsumption. Input and output bufferare installed, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess volt­age.This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are de­signedto directly interfaceHSC2MOSsystems with TTLand NMOScomponents. Theyare also plug in replacements for LSTTL devices giving a reduction of power consumption.
M54HCT86 M74HCT86
QUAD EXCLUSIVE OR GATE
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC T86F1R M74H CT86M1R M74HC T86B1R M74HCT86C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC = No Internal Connection
1/9
M54/M74HCT86
TRUTH TABLE
ABY
LLL
LHH HLH HHL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 4, 9, 12 1A to 4A Data Inputs
2, 5, 10, 13 1B to 4B Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
SCHEM ATIC C IRCUI T (Per Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXIMU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevaluesbeyondwhichdamage tothedevicemayoccur.Functionaloperationunder theseconditionisnotimplied. (*)500 mW:65oC derateto 300 mWby 10mW/oC: 65oCto85oC
2/9
Supply Voltage -0.5 to +7 V DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V DC Input Diode Current ± 20 mA DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW Storage Temperature -65 to +150 Lead Temperature (10 sec) 300
o
C
o
C
M54/M74HCT86
RECO MM ENDED OPERATIN G C ONDI TI O NS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
V
V
OH
V
OL
I
I
CC
I
Supply Voltage 4.5 to 5.5 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC CC
-55 to +125
-40 to +85
Input Rise and Fall Time (VCC= 4.5 to 5.5V) 0 to 500 ns
Test Conditions Value
T
High Level Input
IH
Voltage
V
(V)
4.5
=25oC
CC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
2.0 2.0 2.0 V
to
-40 to 85oC 74HC
-55 to 125oC
5.5
Low Level Input
IL
Voltage
4.5 to
0.8 0.8 0.8 V
5.5
High Level Output Voltage
Low Level Output Voltage
Input Leakage
I
Current Quiescent Supply
VI=
IO=-20 µA 4.4 4.5 4.4 4.4
V
IH
4.5
or
I
=-4.0 mA 4.18 4.31 4.13 4.10
O
V
IL
VI=
IO=20µA 0.0 0.1 0.1 0.1
V
IH
4.5
or
I
= 4.0 mA 0.17 0.26 0.33 0.4
O
V
IL
VI=VCCor GND ±0.1 ±1 ±1 µA
5.5
5.5 VI=VCCor GND 1 10 20 µA
Current Additional worst
CC
case supply current
5.5 Per Input pin
V
= 0.5V or
I
VI= 2.4V
2.0 2.9 3.0 mA
Other Inputs at
VCCor GND
IO=0
54HC
V V
o
C
o
C
Unit
V
V
3/9
Loading...
+ 6 hidden pages