SGS-THOMSON M54HC251, M74HC251 Technical data

查询M54HC251供应商
.HIGH SPEED
tPD= 14 ns(TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=4µA(MAX.) AT TA=25°C6V
.HIGH NOISE IMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTLLOADS
.SYMMETRICALOUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGE RANGE
VCC(OPR)= 2 V TO6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS251
DESCRIPTION
TheM54/74HC251is ahighspeedCMOS8-CHAN­NELMULTIPLEXER(3-STATE)fabricatedinsilicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. This multiplexer featuresboth true (Y) and complement (W)outputs as well as STROBE input.The STROBEmust be a low logic level to enable this device. When the STROBEinput is high, both outputs are in the high impedance state. When enabled, address informa­tionon the dataselectinputs determineswhichdata input is routed to Y and W. All inputs areequipped with protection circuits against staticdischarge and transient excess voltage.
M54HC251 M74HC251
8 BITSIPO SHIFT REGISTER
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 251F1R M74H C251M1R M74HC 251B1R M74HC2 51C1R
PIN CONNECTIONS (top view)
F1R
(CeramicPackage)
C1R
(Chip Carrier)
INPUT AND OUTPUT EQUIVALENT CIRCUIT
February 1993
NC = No Internal Connection
1/11
M54/M74HC251
TRUTH TABLE
CBAS
XXXHZZ
LLLLD0D0 L L H L D1 D1 LHLLD2D2
LHHLD3D3 H L L L D4 D4 H L H L D5 D5 H H L L D6 D6 H H H L D7 D7
X:Don’t Care Z: HIGH Impedance
LOGI C DIAG RAM
INPUTS OUTPUS
STROBE
YW
2/11
M54/M74HC251
PIN DESCRIPTION
IEC LOGIC SYMBOL
PIN No SYMBOL NAME AND FUNCTION
4, 3, 2, 1,
D0 to D7 Multiplexer Inputs
15, 14, 13,
12
5 Y Multiplexer Output 6 W Complementary
Multiplexer Output
7 STROBE 3 State Output Enable
Input
11, 10, 9 A, B, C Select Inputs
8 GND Ground (0V)
16 V
CC
Positive Supply Voltage
ABSOLU TE MAXIMU M RATINGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
AbsoluteMaximumRatingsarethose values beyondwhichdamagetothedevice mayoccur. Functionaloperationunder theseconditionisnotimplied. (*)500 mW:65oC derateto 300 mWby 10mW/oC: 65oCto85oC
Supply Voltage -0.5 to +7 V DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V DC Input Diode Current ± 20 mA DC Output Diode Current ± 20 mA DC Output Source Sink Current Per Output Pin ± 25 mA DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW Storage Temperature -65 to +150 Lead Temperature (10 sec) 300
L
o
C
o
C
RECO MM ENDED O PERAT IN G C O NDITI O NS
Symbol Parameter Value Unit
V
V
T
t
V
r,tf
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
= 6 V 0 to 400
V
CC
V V
o
C
o
C
3/11
M54/M74HC251
DC SPECIFICATIO NS
Symbol Parameter
V
V
V
V
I
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level
OH
Output Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current 3 State Output
OZ
Off State Current Quiescent Supply
CC
Current
Test Conditions Value
V
(V)
CC
=25oC
A
54HC and 74HC
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85oC 74HC
-55 to 125oC 54HC
Unit
T
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
2.0
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
=
V
I
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
6.0 VI=VIHor V
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
IL
±0.5 ±5.0 ±10 µA
VO=VCCor GND
6.0 VI=VCCor GND 4 40 80 µA
V
V
V
V
4/11
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