SGS-THOMSON M54HCT86, M74HCT86 Technical data

M54HCT86

.HIGH SPEED

.tPD = 15 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION

.ICC = 1 μA (MAX.) AT TA = 25 °C COMPATIBLE WITH TTL OUTPUTS

.VIH = 2V (MIN.) VIL = 0.8V (MAX)

OUTPUT DRIVE CAPABILITY

.10 LSTTL LOADS

SYMMETRICAL OUTPUT IMPEDANCE

. IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS

.tPLH = tPHL

PIN AND FUNCTION COMPATIBLE WITH 54/74LS86

DESCRIPTION

The M54/74HCT86 is a high speed CMOS QUAD EXCLUSIVE OR GATE fabricated in silicon gate C2MOS technology.

It has the same high speed performance of LSTTL combined with true CMOS low power consumption. Input and output buffer are installed, which enables high noise immunity and stable output.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.This integrated circuit has input and output characteristics that are fully compatible with 54/74 LSTTL logic families. M54/74HCT devices are designed to directly interface HSC2MOS systems with TTL and NMOS components. They are also plug in replacements for LSTTL devices giving a reduction of power consumption.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

M54HCT86

M74HCT86

QUAD EXCLUSIVE OR GATE

B1R	F1R
(Plastic Package)	(Ceramic Package)

M1R	C1R
(Micro Package)	(Chip Carrier)
ORDER CODES :
M54HCT86F1R	M74HCT86M1R
M74HCT86B1R	M74HCT86C1R

PIN CONNECTIONS (top view)

NC =

No Internal

Connection

February 1993

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M54/M74HCT86

TRUTH TABLE			IEC LOGIC SYMBOL
A		B	Y
L		L	L
L		H	H
H		L	H
H		H	L
PIN DESCRIPTION
PIN No	SYMBOL		NAME AND FUNCTION
1, 4, 9, 12	1A to 4A		Data Inputs
2, 5, 10, 13	1B to 4B		Data Inputs
3, 6, 8, 11	1Y to 4Y		Data Outputs
7	GND		Ground (0V)
14	VCC		Positive Supply Voltage

SCHEMATIC CIRCUIT (Per Gate)

ABSOLUTE MAXIMUM RATINGS

Symbol	Parameter	Value	Unit
VCC	Supply Voltage	-0.5 to +7	V
VI	DC Input Voltage	-0.5 to VCC + 0.5	V
VO	DC Output Voltage	-0.5 to VCC + 0.5	V
IIK	DC Input Diode Current	± 20	mA
IOK	DC Output Diode Current	± 20	mA
IO	DC Output Source Sink Current Per Output Pin	± 25	mA
ICC or IGND	DC VCC or Ground Current	± 50	mA
PD	Power Dissipation	500 (*)	mW
Tstg	Storage Temperature	-65 to +150	oC
TL	Lead Temperature (10 sec)	300	oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.

(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC

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									M54/M74HCT86
RECOMMENDED OPERATING CONDITIONS
Symbol			Parameter					Value		Unit
VCC	Supply Voltage							4.5 to 5.5		V
VI	Input Voltage							0 to VCC		V
VO	Output Voltage							0 to VCC		V
Top	Operating Temperature: M54HC Series							-55 to +125		oC
			M74HC Series					-40 to +85		oC
tr, tf	Input Rise and Fall Time (VCC = 4.5 to 5.5V)							0 to 500		ns
DC SPECIFICATIONS
		Test Conditions						Value
Symbol	Parameter	VCC			TA = 25 oC			-40 to 85 oC -55 to 125 oC		Unit
					54HC and 74HC			74HC	54HC
		(V)
					Min. Typ. Max. Min. Max. Min. Max.
VIH	High Level Input	4.5			2.0			2.0	2.0	V
	Voltage	to
		5.5
VIL	Low Level Input	4.5					0.8	0.8	0.8	V
	Voltage	to
		5.5
VOH	High Level		VI =	IO=-20 μA	4.4	4.5		4.4	4.4
	Output Voltage	4.5	VIH							V
			or	IO=-4.0 mA	4.18	4.31		4.13	4.10
			VIL
VOL	Low Level Output		VI =	IO= 20 μA		0.0	0.1	0.1	0.1
	Voltage	4.5	VIH							V
			or	IO= 4.0 mA		0.17	0.26	0.33	0.4
			VIL
II	Input Leakage	5.5	VI = VCC or GND				±0.1	±1	±1	μA
	Current
ICC	Quiescent Supply	5.5	VI = VCC or GND				1	10	20	μA
	Current
ICC	Additional worst	5.5	Per Input pin				2.0	2.9	3.0	mA
	case supply		VI = 0.5V or
	current		VI = 2.4V
			Other Inputs at

VCC or GND

IO= 0

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