SGS-THOMSON M54HC251, M74HC251 Technical data

M54HC251

.HIGH SPEED

.tPD = 14 ns (TYP.) AT VCC = 5 V LOW POWER DISSIPATION

.ICC = 4 μA (MAX.) AT TA = 25 °C 6 V HIGH NOISE IMMUNITY

.VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY

.10 LSTTL LOADS

SYMMETRICAL OUTPUT IMPEDANCE

. IOH = IOL = 4 mA (MIN.) BALANCED PROPAGATION DELAYS

.tPLH = tPHL

WIDE OPERATING VOLTAGE RANGE

.VCC (OPR) = 2 V TO 6 V

PIN AND FUNCTION COMPATIBLE WITH 54/74LS251

DESCRIPTION

The M54/74HC251 is a high speed CMOS 8-CHAN- NEL MULTIPLEXER (3-STATE) fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. This multiplexer features both true (Y) and complement (W) outputs as well as STROBE input. The STROBE must be a low logic level to enable this device. When the STROBE input is high, both outputs are in the high impedance state. When enabled, address information on the data select inputs determines which data input is routed to Y and W. All inputs are equipped with protection circuits against static discharge and transient excess voltage.

INPUT AND OUTPUT EQUIVALENT CIRCUIT

M54HC251

M74HC251

8 BIT SIPO SHIFT REGISTER

B1R

F1R

(Plastic Package)

(Ceramic Package)

M1R

C1R

(Micro Package)

(Chip Carrier)

ORDER CODES :

M54HC251F1R

M74HC251M1R

M74HC251B1R

M74HC251C1R

PIN CONNECTIONS (top view)

NC =

No Internal

Connection

February 1993

1/11

SGS-THOMSON M54HC251, M74HC251 Technical data

M54/M74HC251

TRUTH TABLE

 

 

INPUTS

 

 

OUTPUS

 

 

 

STROBE

Y

W

C

B

A

S

 

 

X

X

X

H

Z

Z

L

L

L

L

D0

D0

L

L

H

L

D1

D1

L

H

L

L

D2

D2

L

H

H

L

D3

D3

H

L

L

L

D4

D4

H

L

H

L

D5

D5

H

H

L

L

D6

D6

H

H

H

L

D7

D7

X: Don't Care

Z: HIGH Impedance

 

 

 

 

LOGIC DIAGRAM

2/11

M54/M74HC251

PIN DESCRIPTION

IEC LOGIC SYMBOL

PIN No

SYMBOL

NAME AND FUNCTION

4, 3, 2, 1,

D0 to D7

Multiplexer Inputs

15, 14, 13,

 

 

12

 

 

5

Y

Multiplexer Output

6W Complementary Multiplexer Output

7

STROBE

3 State Output Enable

 

 

Input

11, 10, 9

A, B, C

Select Inputs

8

GND

Ground (0V)

16

VCC

Positive Supply Voltage

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCC

Supply Voltage

-0.5 to +7

V

VI

DC Input Voltage

-0.5 to VCC + 0.5

V

VO

DC Output Voltage

-0.5 to VCC + 0.5

V

IIK

DC Input Diode Current

± 20

mA

IOK

DC Output Diode Current

± 20

mA

IO

DC Output Source Sink Current Per Output Pin

± 25

mA

ICC or IGND

DC VCC or Ground Current

± 50

mA

PD

Power Dissipation

500 (*)

mW

Tstg

Storage Temperature

-65 to +150

oC

TL

Lead Temperature (10 sec)

300

oC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.

(*) 500 mW: 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Value

Unit

VCC

Supply Voltage

 

2 to 6

V

VI

Input Voltage

 

0 to VCC

V

VO

Output Voltage

 

0 to VCC

V

Top

Operating Temperature: M54HC Series

 

-55 to +125

oC

 

M74HC Series

 

-40 to +85

oC

tr, tf

Input Rise and Fall Time

VCC = 2 V

0 to 1000

ns

 

 

VCC = 4.5 V

0 to 500

 

 

 

VCC = 6 V

0 to 400

 

3/11

M54/M74HC251

DC SPECIFICATIONS

 

 

Test Conditions

 

 

 

Value

 

 

Symbol

Parameter

VCC

 

 

TA = 25 oC

-40 to 85 oC

-55 to 125 oC

Unit

 

 

 

 

54HC and 74HC

74HC

54HC

 

 

 

(V)

 

 

 

 

 

 

 

Min. Typ. Max. Min. Max. Min. Max.

 

 

 

 

 

 

 

VIH

High Level Input

2.0

 

 

1.5

 

 

1.5

1.5

 

 

Voltage

4.5

 

 

3.15

 

 

3.15

3.15

V

 

 

 

 

 

 

 

 

 

6.0

 

 

4.2

 

 

4.2

4.2

 

VIL

Low Level Input

2.0

 

 

 

 

0.5

0.5

0.5

 

 

Voltage

4.5

 

 

 

 

1.35

1.35

1.35

V

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

1.8

1.8

1.8

 

VOH

High Level

2.0

VI =

IO=-20 μA

1.9

2.0

 

1.9

1.9

 

 

Output Voltage

4.5

4.4

4.5

 

4.4

4.4

 

 

VIH

 

V

 

 

 

 

 

 

 

 

 

 

 

6.0

or

 

5.9

6.0

 

5.9

5.9

 

 

 

 

 

 

 

4.5

VIL

IO=-4.0 mA

4.18

4.31

 

4.13

4.10

 

 

 

6.0

 

IO=-5.2 mA

5.68

5.8

 

5.63

5.60

 

VOL

Low Level Output

2.0

VI =

IO= 20 μA

 

0.0

0.1

0.1

0.1

 

 

Voltage

4.5

 

0.0

0.1

0.1

0.1

 

 

VIH

 

V

 

 

6.0

 

 

0.0

0.1

0.1

0.1

 

 

or

 

 

 

 

 

 

 

 

 

4.5

VIL

IO= 4.0 mA

 

0.17

0.26

0.33

0.40

 

 

 

6.0

 

IO= 5.2 mA

 

0.18

0.26

0.33

0.40

 

II

Input Leakage

6.0

VI = VCC or GND

 

 

±0.1

±1

±1

μA

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

3 State Output

6.0

VI = VIH or VIL

 

 

±0.5

±5.0

±10

μA

 

Off State Current

 

VO = VCC or GND

 

 

 

 

 

 

ICC

Quiescent Supply

6.0

VI = VCC or GND

 

 

4

40

80

μA

 

Current

 

 

 

 

 

 

 

 

 

4/11

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