OUT 160ns (typ.): CARRYIN-TO-CARRYOUT
50ns (typ.) AT VDD= 10V, CL= 50pF
.QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
.INPUT CURRENTOF 100nA AT 18VAND25°C
FOR HCC DEVICE
.100% TESTEDFOR QUIESCENTCURRENT
.5V, 10V,AND 15VPARAMETRIC RATING
.MEETSALLREQUIREMENTSOFJEDECTEN-
TATIVESTANDARDN°13A,”STANDARDSPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIESCMOS DEVICES”
HCC/HCF4008B
EY
(Plastic Package)F(Ceramic Frit SealPackage)
M1
(MicroPackage)
ORDERCODES :
HCC4008BFHCF4008BM1
HCF4008BEYHCF4008BC1
(Plastic Chip Carrier)
C1
DESCRIPTION
TheHCC4008B (extended temperaturerange)and
HCF4008B (intermediate temperature range) are
monolithic integrated circuits, available in 16-lead
dual in-line plastic or ceramic package and plastic
micropackage.
TheHCC/HCF4008Btypesconsist offourfulladder
stages with fast look ahead carry provision from
stagetostage.Circuitry isincluded toprovidea fast
”parallel-carry-out” to permit high-speed operation
in arithmetic sections using several HCC/HCF
4008B’s.
HCC/HCF4008B inputsincludethe foursets of bits
tobe added,A1to A4andB1toB4, in addition to the
”CarryIn”bitfromaprevioussection.
HCC/HCF4008B outputs include the four sum bits,
S1toS4.Inaddition to thehighspeed”parallel-carryout” which may be utilized at a succeeding
HCC/HCF4008B section.
PIN CONNECTIONS
June1989
1/13
HCC/HCF4008B
ABSOLUTE MAX IMU M RATI NGS
SymbolParameterVal ueUnit
V
*Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage– 0.5 to VDD+ 0.5V
i
I
DC Input Current (any one input)± 10mA
I
P
Total Power Dissipation (per package)
tot
Dissipation per Output Transistor
for Top= Full Package-temperature Range
T
Operating Temperature : HCC Types
op
HCF Types
T
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
* All voltage values are referred to VSSpin voltage.
Storage Temperature– 65 to + 150°C
stg
RECOMMENDED OPERATING CONDITIONS
SymbolParameterValueUnit
V
T
Supply Voltage : HCC Types
DD
HCF Types
V
Input Voltage0 to V
I
Operating Temperature : HCC Types
op
HCF Types
– 0.5 to + 20
– 0.5 to + 18
200
100
–55to+125
–40to+85
3to18
3to15
DD
– 55 to + 125
–40to+85
V
V
mW
mW
°C
°C
V
V
V
°C
°C
2/13
LOGIC DIAGRAM
HCC/HCF4008B
TRUTH TABLE
A
i
O
I
O
I
O
I
O
I
B
O
O
I
I
O
O
I
I
i
CICOSUM
O
O
O
O
I
I
I
I
O
O
O
I
O
I
I
I
O
I
I
O
I
O
O
I
3/13
HCC/HCF4008B
STATIC EL ECTR ICA L CHARACTERISTICS (over recommended operating conditions)
Test ConditionsValue
SymbolParame te r
I
Quiescent
L
Current
HCC
Types
HCF
Types
V
OH
Output High
Voltage
V
OL
Output Low
Voltage
V
IH
Input High
Voltage
V
IL
Input Low
Voltage
I
OH
Output
Drive
Current
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
I
IH,IIL
Input
Leakage
Current
HCC
Types
HCF
Types
C
Input CapacitanceAny Input57.5pF
I
*T
=–55°CforHCC device : – 40°CforHCF device.
Low
*T
= + 125°CforHCC device : + 85°CforHCF device.
High
TheNoise Margin for both ”1” and ”0” level is : 1Vmin. with VDD= 5V, 2V min.with VDD=10V, 2.5 Vmin. withVDD= 15V.
Information furnished is believed tobe accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringement of patents or other rights of third parties which mayresults from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices orsystemswithout express
written approval of SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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