SGS-THOMSON BTW 68(N) Technical data
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FEATURES
.HIGHSURGECAPABILITY
.HIGH ON-STATECURRENT
.HIGH STABILITYAND RELIABILITY
.BTW68 Serie :
INSULATEDVOLTAGE= 2500V
(ULRECOGNIZED: E81734)
DESCRIPTION
The BTW 68 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
(RMS)
BTW 68 (N)
K
A
G
TOP 3
(Plastic)
SCR
ABSOLUTE RATINGS (limitingvalues)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
Symbol Parameter BTW 68 BTW 68 / BTW 68 N Unit
RMS on-state current
(180° conduction angle)
Average on-state current (180°
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp=10 ms 800 A2s
Gate supply : IG= 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range - 40 to + 150
from case
BTW 68
BTW 68 N
BTW 68
BTW 68 N
200 400 600 800 1000 1200
Tc=80°C
Tc=85°C
Tc=80°C
Tc=85°C
tp=8.3 ms 420 A
tp=10 ms 400
30
35
19
22
100 A/µs
- 40 to + 125
230 °C
A
A
°C
°C
V
DRM
V
RRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
200 400 600 800 1000 1200 V
1/5
BTW 68 (N)
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 50 °C/W
Rth (j-c) DC Junction to case for DC BTW 68 1.1 °C/W
BTW 68 N 0.8
GATECHARACTERISTICS (maximumvalues)
P
ELECTRICAL CHARACTERISTICS
=1W PGM= 40W (tp = 20 µs) I
G (AV)
Symbol Test Conditions Value Unit
= 8A (tp = 20 µs) V
FGM
RGM
=5V.
BTW 68 BTW 68 N
I
GT
V
GT
V
GD
tgt VD=V
I
L
I
H
V
TM
I
DRM
I
RRM
dV/dt Linear slope up to
tq VD=67%V
VD=12V (DC) RL=33Ω Tj=25°C MAX 50 mA
VD=12V (DC) RL=33Ω Tj=25°C MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 1.5A/µs
IG= 1.2 I
IT= 500mA gate open Tj=25°C MAX 75 mA
BTW 68 ITM= 60A
BTW 68 N ITM= 70A tp= 380µs
V
V
VD=67%V
gate open
dITM/dt=30 A/µsdV
DRM
RRM
GT
Rated
Rated
DRM
DRMITM
=3.3kΩ Tj= 125°C MIN 0.2 V
= 200mA
= 60A VR= 75V
/dt= 20V/µs
D
V
V
DRM
DRM
≤ 800V
≥ 1000V
Tj=25°C TYP 2 µs
Tj=25°C TYP 40 mA
Tj=25°C MAX 2.1 2.2 V
Tj=25°C MAX 0.02 mA
Tj= 125°C6
Tj= 125°C MIN 500
250
Tj= 125°C TYP 100 µs
V/µs
2/5
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