SGS-THOMSON BTA06 TW, BTA06 SW, BTB06 TW, BTB06 SW Technical data
BTA06SW
BTA06 TW/SW
BTB06 TW/SW
LOGIC LEVEL TRIACS
.FEATURES
.LOW IGT = 5mA max
.LOW IH = 15mA max
.HIGH EFFICIENCY SWITCHING
BTA Family :
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
A1
The BTA/BTB06 TW/SW use high performance products glass passivated chips.
The low IGT / IH level coupled with the high efficiency circuit make this family will adapted for low power trigger circuits (microcontrollers, microprocessors, integrated circuits ...)
ABSOLUTE RATINGS (limiting values)
A2 G
TO220AB
(Plastic)
Symbol
IT(RMS)
ITSM
I2t
dI/dt
|
Parameter |
|
Value |
Unit |
RMS on-state current |
BTA |
Tc = 80 °C |
6 |
A |
(360° conduction angle) |
BTB |
Tc = 90 °C |
|
|
|
|
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||
Non repetitive surge peak on-state current |
tp = 8.3 ms |
63 |
A |
|
( Tj initial = 25°C ) |
|
tp = 10 ms |
60 |
|
|
|
|
||
I2t value |
|
tp = 10 ms |
18 |
A2s |
Critical rate of rise of on-state current |
Repetitive |
20 |
A/μs |
|
Gate supply : IG = 50mA |
diG/dt = 0.1A/μs |
F = 50 Hz |
|
|
|
|
|
Non |
|
100 |
|
|
|
Repetitive |
|
|
|
|
Tstg |
Storage and operating junction temperature range |
- |
40 |
to + 150 |
°C |
|
Tj |
|
|
- |
40 |
to + 110 |
°C |
Tl |
Maximum lead temperature for soldering during 10 s at |
4.5 mm |
|
260 |
°C |
|
|
from case |
|
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|
Symbol |
Parameter |
|
BTA / BTB06- |
|
|
Unit |
|
|
400 TW/SW |
600 TW/SW |
|
700 TW/SW |
|
VDRM |
Repetitive peak off-state voltage |
400 |
600 |
|
700 |
V |
VRRM |
Tj = 110 °C |
|
|
|
|
|
March 1995 |
1/5 |
BTA06 TW/SW / BTB06 TW/SW
THERMAL RESISTANCES
Symbol |
Parameter |
|
Value |
Unit |
Rth (j-a) |
Junction to ambient |
|
60 |
°C/W |
Rth (j-c) DC |
Junction to case for DC |
BTA |
4.4 |
°C/W |
|
|
BTB |
3.3 |
|
Rth (j-c) AC |
Junction to case for 360° conduction angle |
BTA |
3.3 |
°C/W |
|
( F= 50 Hz) |
BTB |
2.5 |
|
|
|
|
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W |
PGM = 10W (tp = 20 μs) IGM = 4A (tp = 20 μs) |
VGM = 16V (tp = 20 μs). |
|
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ELECTRICAL CHARACTERISTICS |
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Symbol |
|
|
Test Conditions |
|
Quadrant |
|
Suffix |
|
Unit |
||
|
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|
|
|
|
|
|
TW |
SW |
|
|
IGT |
|
VD=12V |
|
(DC) RL=33Ω |
Tj=25°C |
I-II-III |
MAX |
5 |
|
10 |
mA |
VGT |
|
VD=12V |
|
(DC) RL=33Ω |
Tj=25°C |
I-II-III |
MAX |
|
1.5 |
|
V |
VGD |
|
VD=VDRM RL=3.3kΩ |
Tj=110°C |
I-II-III |
MIN |
|
0.2 |
|
V |
||
tgt |
|
VD=VDRM |
IG = 40mA |
Tj=25°C |
I-II-III |
TYP |
|
2 |
|
μs |
|
|
|
dIG/dt = 0.5A/μs |
|
|
|
|
|
|
|
||
IL |
|
IG=1.2 IGT |
|
Tj=25°C |
I-III |
TYP |
8 |
|
15 |
mA |
|
|
|
|
|
|
|
II |
|
15 |
|
25 |
|
IH * |
|
IT= 100mA |
gate open |
Tj=25°C |
|
MAX |
15 |
|
25 |
mA |
|
VTM |
* |
ITM= 8.5A |
tp= 380μs |
Tj=25°C |
|
MAX |
|
1.75 |
|
V |
|
IDRM |
VDRM |
Rated |
Tj=25°C |
|
MAX |
|
0.01 |
|
mA |
||
IRRM |
VRRM |
Rated |
Tj=110°C |
|
MAX |
|
1 |
|
|
||
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|
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|
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|
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|||
dV/dt |
* |
Linear slope up to VD=67%VDRM |
Tj=110°C |
|
MIN |
20 |
|
50 |
V/μs |
||
|
|
gate open |
|
|
|
|
|
|
|
|
|
(dI/dt)c |
* |
dV/dt= 0.1V/μs |
Tj=110°C |
|
MIN |
2.7 |
|
3.5 |
A/ms |
||
|
|
dV/dt= 20V/μs |
|
|
MIN |
1.3 |
|
2.7 |
|
||
* For either polarity of electrode A2 voltage with reference to electrode A1.
2/5
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