SGS-THOMSON BTA06 B, BTA06 C, BTB06 B, BTB06 C Technical data

查询BTA06 B供应商

FEATURES

.HIGHSURGECURRENT CAPABILITY

.COMMUTATION : (dV/dt)c>5 V/µs

.BTA Family :

INSULATINGVOLTAGE=2500V
(ULRECOGNIZED: E81734)

BTA06 B/C
BTB06 B/C

STANDARDTRIACS

(RMS)

DESCRIPTION

The BTA/BTB06 B/C triac family are high perform­ance glass passivated PNPN devices.
These parts are suitables for general purpose ap­plications where high surge current capability is re­quired. Application such as phase control and
static switching on inductive or resistive load.

ABSOLUTE RATINGS (limitingvalues)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

I2tI

dI/dt Critical rate of rise of on-state current

RMS on-state current
(360° conduction angle)

Non repetitive surge peak on-state current
( Tj initial = 25°C)

2

t value tp = 10 ms 18 A2s

Gate supply : IG= 500mA diG/dt = 1A/µs

BTA Tc = 100 °C6 A
BTB Tc = 105 °C

tp = 8.3 ms 63 A

tp = 10 ms 60

Repetitive
F = 50 Hz

Repetitive

Non

A1

A2

G

TO220AB

(Plastic)

10 A/µs

50

Tstg

Tj
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm

Symbol Parameter BTA / BTB06-... B/C Unit

V

DRM

V

RRM

March 1995

Storage and operating junction temperature range - 40 to + 150

- 40 to + 125
260 °C

from case

400 600 700 800

Repetitive peak off-state voltage
Tj = 125 °C

400 600 700 800 V

°C
°C

1/5

BTA06 B/C / BTB 06 B/C

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W

BTB 3.2

Rth (j-c) AC Junction to case for 360° conduction angle

( F= 50 Hz)

BTA 3.3 °C/W
BTB 2.4

GATECHARACTERISTICS (maximum values)

P

=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).

G (AV)

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Quadrant Suffix Unit

BC

IGTVD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 50 25 mA

IV MAX 100 50

V

GT

V

GD

tgt VD=V

I

L

IH*I

VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.65 V

VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.5 V
VD=V

DRMRL
DRMIG

dIG/dt = 3A/µs
IG=1.2 I

= 500mA gate open Tj=25°C MAX 50 25 mA

T

=3.3kΩ Tj=110°C I-II-III-IV MIN 0.2 V

= 500mA

GT

Tj=25°C I-II-III-IV TYP 2 µs

Tj=25°C I-III-IV TYP 40 20 mA

II 70 35

I

DRM

I

RRM

dV/dt * Linear slope up to VD=67%V

(dV/dt)c * (dI/dt)c = 2.7A/ms Tj=110°C MIN 10 5 V/µs

* For either polarity of electrode A2voltage with reference to electrode A1.

2/5

V

DRM

V

RRM

gate open

Rated
Rated

DRM

Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.5
Tj=110°C MIN 250 100 V/µs

ORDERING INFORMATION

BTA06 B/C / BTB06 B/C

Package I

T(RMS)

V

DRM/VRRM

AV B C

BTA
(Insulated)

6 400 X X

600 X X
700 X X
800 X X

BTB
(Uninsulated)

400 X X
600 X X
700 X X
800 X X

Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)

P(W)

10

8

6

4

180

=30

O

=60

o

=90

o

= 120

o

=180

o

o

2

I (A)

0

0123456

T(RMS)

Sensitivity Specification

Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (T
and T

) for different thermal resistances heatsink +

case

amb

contact (BTA).

o

P(W)

10

8

6

Tcase ( C)

o

Rth = 0 C/W

o

2.5 C/W

o

5C/W

o

10 C/W

-95

-100

-105

-110

4

-115

2

o

Tamb ( C)

0

0 20406080100120140

-120

-125

Fig.3 : Correlation between maximum mean power

dissipation and maximum allowable temperatures (T
and T

) for different thermal resistances heatsink +

case

amb

contact (BTB).

o

P(W)

Tcase ( C)

10 -100

8

6

4

o

Rth = 0 C/W

o

2.5 C/W

o

5C/W

o

10 C/W

2

o

0

0 20 40 60 80 100 120 140

Tamb ( C)

-105

-110

-115

-120

-125

Fig.4 : RMS on-state current versus case temperature.

I (A)

T(RMS)

7
6

BTA

BTB

5
4
3

= 180

o

2
1
0

0 102030405060708090100110120130

o

Tcase( C)

3/5

BTA06 B/C / BTB 06 B/C

Fig.5 : Relative variation of thermal impedance versus

pulse duration.

Zth/Rth

1

Zth( j-c)

0.1

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Zth(j-a)

tp(s)

Fig.7 : Non Repetitive surge peak on-state current

versus number of cycles.

Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.

Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

Fig.9 : On-state characteristics (maximum values).

4/5

PACKAGE MECHANICAL DATA

TO220AB Plastic

A

I

O

P

N

==

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torquevalue : 1 m.N.

G

D

F

B

C

J

H

L

M

BTA06 B/C / BTB06 B/C

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190

I 3.55 4.00 0.140 0.158

J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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