查询BTA06 SW供应商
FEATURES
BTA0 6 TW/S W
BTB0 6 TW/S W
LOGIC LEVEL TRIACS
.LOWI
.LOW I
= 5mA max
GT
= 15mA max
H
.HIGH EFFICIENCYSWITCHING
.BTA Family:
INSULATINGVOLTAGE= 2500V
(ULRECOGNIZED: E81734)
DESCRIPTION
The BTA/BTB06 TW/SW use high performance
products glass passivated chips.
The low I
ciency circuit make this family will adapted for low
power trigger circuits (microcontrollers, microprocessors, integrated circuits ...)
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
GT/IH
I
TSM
I2tI
level coupled with the high effi-
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp = 10 ms 18 A2s
(RMS)
A1
A2
G
TO220AB
(Plastic)
BTA Tc = 80 °C6 A
BTB Tc = 90 °C
tp = 8.3 ms 63 A
tp = 10 ms 60
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 50mA diG/dt = 0.1A/µs
Tstg
Tj
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
Symbol Parameter BTA / BTB06- Unit
V
DRM
V
RRM
March 1995
Storage and operating junction temperature range - 40 to + 150
from case
400 TW/SW 600 TW/SW 700 TW/SW
Repetitive peak off-state voltage
Tj = 110 °C
Repetitive
F = 50 Hz
Non
Repetitive
400 600 700 V
20 A/µs
100
- 40 to + 110
260 °C
°C
°C
1/5
BTA 0 6 TW/SW / BTB06 TW/ SW
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.3
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA 3.3 °C/W
BTB 2.5
GATECHARACTERISTICS (maximum values)
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
TW SW
I
GT
V
GT
V
GD
tgt VD=V
I
L
IH*I
VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.75 V
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 5 10 mA
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 0.5A/µs
IG=1.2 I
= 100mA gate open Tj=25°C MAX 15 25 mA
T
=3.3kΩ Tj=110°C I-II-III MIN 0.2 V
= 40mA
GT
Tj=25°C I-II-III TYP 2 µs
Tj=25°C I-III TYP 8 15 mA
II 15 25
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dI/dt)c * dV/dt= 0.1V/µs Tj=110°C MIN 2.7 3.5 A/ms
* For either polarity of electrode A2voltage with referenceto electrode A1.
2/5
V
V
gate open
dV/dt= 20V/µs MIN 1.3 2.7
DRM
RRM
Rated
Rated
DRM
Tj=25°C MAX 0.01 mA
Tj=110°C MAX 1
Tj=110°C MIN 20 50 V/µs
ORDERING INFORMATION
BTA06 TW/SW / BTB06 TW/SW
Package I
BTA
(Insulated)
BTB
(Uninsulated)
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current(F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
T(RMS)
A V TW SW
6 400 X X
V
DRM/VRRM
600 X X
700 X X
400 X X
600 X X
700 X X
Sensitivity Specification
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
and T
contact (BTA).
) for different thermal resistances heatsink +
case
amb
dissipation and maximum allowable temperatures (T
and T
contact (BTB).
) for different thermal resistances heatsink +
case
Fig.4 : RMS on-state current versus case temperature.Fig.3 : Correlation between maximum RMS power
amb
3/5
BTA 0 6 TW/SW / BTB06 TW/ SW
Fig.5 : Relative variation of thermal transient impedance
versus pulse duration.
Zth/Rth
1
Zth( j-c)
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
0.1
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth(j-a)
tp(s)
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values). Fig.10 : Relative variation of (dI/dt)c versus junction
temperature.
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
I
P
A
O
N
==
G
D
F
B
C
J
H
L
M
BTA06 TW/SW / BTB06 TW/SW
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.20 10.50 0.401 0.413
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190
I 3.55 4.00 0.140 0.158
J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torquevalue : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - Allrights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
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