SGS-THOMSON BTA06 GP Technical data

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FEATURES
BTA06 GP
TRIACS
.LOWI
.HIGHSURGECURRENT : I
.I
GT
.INSULATINGVOLTAGE= 2500V
(ULRECOGNIZED: E81734)
DESCRIPTION
The BTA06 GP’s use high performance,glass pas­sivated chips. The insulated TO220AB package, the high surge current and low holding current make this family well adapted to LIGHT DIMMER applications.
ABSOLUTE RATINGS (limitingvalues)
Symbol Parameter Value Unit
I
T(RMS)
I
= 13mAmax
H
=100A
TSM
SPECIFIEDINFOURQUADRANTS
(RMS)
RMS on-state current (360° conduction angle)
TSM
I2tI
Non repetitive surge peak on-state current ( Tj initial = 25°C)
2
t value tp = 10 ms 50 A2s
A1
A2
G
TO220AB
(Plastic)
tp = 8.3 ms 105 A
tp = 10 ms 100
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Tstg
Tj Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
Symbol Parameter BTA06- Unit
V
DRM
V
RRM
March 1995
Storage and operating junction temperature range - 40 to + 150
from case
Repetitive peak off-state voltage Tj = 125 °C
Repetitive F = 50 Hz
Non
Repetitive
400 GP 600 GP
400 600 V
10 A/µs
50
- 40 to + 125 260 °C
°C °C
1/4
BTA06 GP
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 4 °C/W
Rth (j-c) AC Junction to case for360° conduction angle
( F= 50 Hz)
3 °C/W
GATECHARACTERISTICS (maximumvalues)
P
G (AV)
=1W PGM= 10W (tp = 20 µs) IGM=4A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
GP
I
GT
V
GT
V
GD
tgt VD=V
I
L
VD=12V (DC) RL=33 Tj=25°C I-II-III MAX 50 mA
IV MAX 75 VD=12V (DC) RL=33 Tj=25°C I-II-III-IV MAX 1.5 V VD=V
DRMRL DRMIG
dIG/dt = 3A/µs IG=1.2 I
=3.3k Tj=110°C I-II-III-IV MIN 0.2 V
= 500mA
GT
Tj=25°C I-II-III-IV TYP 2 µs
Tj=25°C I-III-IV TYP 20 mA
II 40
IH*I
VTM*ITM= 8.5A tp= 380µs Tj=25°C MAX 1.4 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dV/dt)c * (dI/dt)c= 1.8A/ms Tj=110°C MIN 1 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
2/4
= 100mA gate open Tj=25°C MAX 13 mA
T
V V
gate open
DRM RRM
Rated Rated
DRM
Tj=25°C MAX 0.01 mA Tj=110°C MAX 0.5 Tj=110°C MIN 30 V/µs
TYP 100
TYP 10
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