The Edge649 is an octal pin electronics driver and
receiver combination fabricated in a high- performance
CMOS process. It is designed for automatic test
equipment and instrumentation where cost, functional
density, and power are all at a premium.
The Edge649 incorporates eight channels of
programmable drivers and receivers into one package.
Each channel has per pin driver levels, receiver threshold,
and tristate control.
The 11V driver output and receiver input range allows
the Edge649 to interface directly between TTL, ECL,
CMOS (3V, 5V, and 8V), and custom level circuitry.
The Edge649 is pin and functionally compatible with the
EDGE648, with the following performance differences:
As shown in Figure 1, Edge649 supports programmable
high and low levels and tristate per channel. There are
no shared lines between any drivers. The DVR EN* and
DATA IN signals are TTL compatible inputs that control
the driver (see Figure 2).
With DVR EN* high, the DUT driver goes into a high
impedance state. With DVR EN* low , D AT A IN high forces
the driver into a high state (DUT = V
low forces the driver low (DUT = V
LOW
), and DATA IN
HIGH
).
V
V
HIGH
HIGH
and V
and V
LOW
define the logical “1” and “0” levels of
LOW
the DUT driver and can be adjusted anywhere over the
range determined by VCC and VEE. T able 1 documents
the relationship between the analog power to supplies
(VCC and VEE), the driver range (V
the comparator threshold range (V
The V
HIGH
and V
inputs are unbuffered in that they
LOW
and V
HIGH
THRESHOLD
).
LOW
), and
also provide the driver output current (see Figure 3), so
the source of V
HIGH
and V
must have ample current
LOW
drive capability.
V
HIGH
DUT
DVR EN*
DATA IN
DUT
Figure 2. Driver Functionality
V
HIGH
V
LOW
Simplified Model of the
Unbuffered Output Stage
evieceR/evirD
egnaRedoMnommoC
V5.6+=<TUD=<V0V0.5=<DLOHSERHT=<V1.0V5.6+=CCV
V8+=<TUD=<V0V5.6=<DLOHSERHT=<V1.0V8+=CCV
V11+=<TUD=<V0V5.9=<DLOHSERHT=<V1.0V11+CCV
V8+=<TUD=<V3-V5.6=<DLOHSERHT=<V9.2-V8+=CCV
dlohserhT
egnaR
V
LOW
Figure 3.
ylppuSrewoP
snoitidnoC
V0=EEV
V0=EEV
V0=EEV
V3-=EEV
Table 1. Power Supply Requirement
4 2000 Semtech Corp.
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Circuit Description (continued)
Driver Output Protection
In a functional testing environment, where a resistor is
added in series with the driver output, the Edge649 can
withstand a short to any legal DUT voltage for an indefinite
amount of time.
In a low impedance application with no additional output
series resistance, care must be exercised and systems
should be designed to check for this condition and tristate
the driver if a short is detected.
Receiver Functionality
Edge649
Edge649 supports programmable thresholds per
channel. There are no shared lines between comparators.
THRESHOLD is a high input impedance analog input
which defines a logical “1” and “0” at the DUT (see
Figure 4). If the DUT voltage is more positive than
THRESHOLD, DATA OUT will be high. With DUT lower
than THRESHOLD, DATA OUT will be low.
DUT
THRESHOLD
DATA OUT
THRESHOLD
DATA OUT
+
–
DUT
Tpd
Figure 4. Receiver Functionality
2000 Semtech Corp.
5
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Application Information
Power Supplies
Edge649
The Edge649 uses three power supplies – VDD, VCC
and VEE. VDD, typically +5V, is the digital supply for all
of the data inputs and outputs. VCC and VEE are the
analog power supplies for the DUT drivers and
comparators. VCC ranges from +6.5V to +11V, and must
be greater than or equal to VDD + 1.5V. VEE is the
negative analog power and typically varies from 0V to –
3V.
The Edge649 has several power supply requirements to
protect the part in power supply fault situations, as well
as during power up and power down sequences. VCC
must remain greater than or equal to VDD at all times.
Both VCC and VDD must always be positive (above
ground), and VEE must always be negative (at or below
ground).
The three-diode configuration shown in Figure 5, used
on a once-per-board basis, insures power supply
sequence and fault tolerance.
VCC
VCC and VEE, which pow er the DUT drivers and receivers,
should also be decoupled to GND with a .1 µF chip
capacitor in parallel with a .001 µF chip capacitor. A
VCC and VEE plane, or at least a solid power bus, is
recommended for optimal performance.
V
and V
HIGH
As the V
HIGH
Decoupling
LOW
and V
inputs are unbuffered and must
LOW
supply the driver output current, decoupling capacitors
for these inputs are recommended in proportion to the
amount of output current the application requires
Expanding the Common Mode Range
Although the Edge649 can drive and receive 11V swings,
these 11 V signals can be adjusted over an 14V range.
By using programmable regulators V1 and V2 for the
VCC and VEE supplies (feasible because these two
analog power supplies do not supply driver output
current), the Edge649 I/O range can be optimized for a
variety of applications (see Figure 6).
VDD
1N5820 or
Equivalent
VEE
Figure 5.
Power Supply Protection Scheme
Power Supplies Decoupling
VDD, which provides the digital power, should be
decoupled to GND with a .1 µF chip capacitor in parallel
with a .001 µF chip capacitor. The bypass capacitors
should be as close to the device as possible. Pow er and
ground planes are recommended to provide a low
inductance return path.
V
1
VCC
Edge 649
VDD
V
2
Figure 6.
There are three rules which govern the supplies V1 and
V2:
1)VDD + 1.5V ≤ V1 ≤ +11V
2)–3V ≤ V2 ≤ 0V
3)(V1 – V2) ≤ 11V
6 2000 Semtech Corp.
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Application Information (continued)
Edge649
Window Comparator
Certain applications require a dual threshold window
comparator to distinguish between the DUT being high,
low, or floating. T o support this application, two Edge649
channels can be combined to create one channel with a
window comparator (see Figure 7). Notice that
connecting two DUT pins ties together the positive inputs
of both receivers. The result is a difference in polarity
between the digital outputs reporting the high and low
status of the DUT.
DUT HIGH
DUT LOW*
–
+
+
–
Figure 7. Edge649 as a
Window Comparator
High Threshold
DUT
Low Threshold
Once two receivers are connected as window
comparators, the two drivers also get connected in
parallel. This dual driver configuration supports a
multitude of applications that have traditionally been
difficult to accommodate.
Trinary Driver
At times, there is a need for a three-le vel driver . T ypically ,
two levels are required for the standard digital “1” and
“0” pattern generation. The third level provides a higher
voltage to place the device under test (DUT) into a
programming or test mode. By controlling the DATA IN
and DVR EN* inputs, a trinary driver with tristate is
realizable (see Figure 8).
Driver with Pull Up/Pull Down
As the drivers are unbuffered, paralleling two drivers for
one DUT node provides a means for adding pull up or
pull down capability . By connecting the V
HIGH
and V
LOW
inputs of one driver through a resistor to a voltage,
additional functionality that would normally require an
external relay on the DUT transmission line to engage
and disengage these functions is realizable.
One common application for the pull up feature is testing
open collector devices. The pull down satisfies open
emitter DUTs (typically ECL). Either the pull up or down
could be used to establish a default high impedance
voltage on a bidirectional bus. Notice that in all
applications, the resistors can be switched dynamically
or statically.
DATA IN A
DVR EN*A
DATA IN B
DVR EN*B
2000 Semtech Corp.
V
HIGH
A
V
HIGH
V
A
LOW
B
Figure 8. Trinary Driver
DUT
V
B
HIGH
V
A
HIGH
V
A
LOW
7
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Application Information (continued)
Edge649
Also, either the pull up or pull down resistor could be
used to terminate the transmission from the DUT to the
pin electronics in an effort to minimize any reflections.
V
A
V
DVR EN*A
DATA IN B
DVR EN*B
HIGH
V
HIGH
V
LOW
B
B
LOW
A
V
PULL UP
V
PULL DOWN
DUTDATA IN A
Figure 9. Driver with Pull Up/Pull Down
Trinary Driver with T ermination
Other combinations are also possible. For example, two
parallel drivers can be configured to implement one
trinary driver with a pull down (or pull up) dynamic
termination (see Figure 10).
V
A
V
V
HIGH
B
LOW
A
V
TERMINATION
DUT
HIGH
DATA IN A
DVR EN*A
DATA IN B
DVR EN*B
Figure 10. Trinary Driver with Termination
Two Logic Family Driver
Many test systems support exactly two families of driver
and receiver levels and select between family A and family
B settings on a per-pin basis, typically using an analog
multiplexer , (See Figure 11.) Common examples of these
families are:
Family A = TTL
Family B = CMOS
or
Family A = TTL
Family B = ECL
The Edge649 supports this system architecture with
minimal hardware and the elimination of the per-pin
analog multiplexer . The drive and receive levels need to
be generated once per system, then distributed and
buffered suitably.
Parametric Functions
Two drivers in parallel also offer the possibility of
connecting force and sense parametric circuitry to the
DUT without adding additional circuitry to the controlled
impedance DUT line. For example, Figure 12 shows the
second driver being utilized to force a current and
measure a voltage.
Notice that the V
HIGH
and V
pins are used from
LOW
different drivers to allow the force and sense functions
to be active simultaneously.
V
HIGH
V
HIGH
DVR EN*A
DVR DATA
DVR EN*B
V
LOW
V
LOW
CHANNEL 1
A
B
DVR EN*A
DVR DATA
DUT0
B
A
DVR EN*B
CHANNEL n
DUT0
Figure 11. Family A/B Using Two Drivers Per Pin
8 2000 Semtech Corp.
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
DUT
V
HIGH
V
LOW
Application Information (continued)
Optional Output Configuration
Certain functional applications require a series output
resistor yet also demand that the comparator be
connected directly to the DUT, not via the backmatch
resistor. To create this configuration, two distinct
termination resistors may be connected to the V
and V
DATA IN A
input pins (see Figure 13).
LOW
V
HIGH
PROGRAMMABLE
CURRENT
SOURCE
HIGH
Edge649
DATA EN* A
DATA IN B
DATA EN* B
V
LOW
VOLTAGE
MEASUREMENT
UNIT
Figure 12. Edge649 Supporting Parametric Testing
Thermal Information
retemaraPlobmySniMpyTxaMstinU
ecnatsiseRlamrehT
esaCotnoitcnuJ
riAotnoitcnuJ
riAllitS
MPFL05
MPFL004
DUT
θ CJ
θ AJ
θ AJ
θ AJ
Figure 13. Functional Application with
the Comparator Connected Directly to the DUT
8.9
43
62
91
o
W/C
o
W/C
o
W/C
o
W/C
2000 Semtech Corp.
9
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Package Information
0.990 SQ
[25.146]
PIN Descriptions
0.953 SQ
[24.206]
68 Pin PLCC Package
θJA = 42 to 48˚C / W
0.045 SQ
[1.143]
0.048
[1.219]
Edge649
See Detail A
0.029
[0.736]
0.016
[0.406]
0.016
[0.406]
0.020
[0.508]
MIN
0.029
[0.736]
0.030
[0.762]
0.065
[1.651]
0.800 REF
[20.32]
0.175
[4.445]
0.910
[23.114]
0.113
[2.87]
Notes: (unless otherwise specified)
1.Dimensions are in inches [millimeters].
2.Tolerances are: .XXX ± 0.005 [0.127].
3.PLCC packages are intended for surface mounting on solder lands on 0.050 [1.27] centers.
10 2000 Semtech Corp.
www.semtech.com
EDGE HIGH-PERFORMANCE PRODUCTS
Recommended Operating Conditions
retemaraPlobmySniMpyTxaMstinU
ylppuSrewoPlatigiDDDV5.455.5V
ylppuSrewoPevitisoPgolanACCV5.1+DDV11V
ylppuSrewoPevitageNgolanAEEV3-0V
ylppuSrewoPgolanAlatoTEEV-CCV5.611V
Edge649
egatloVtuptuOhgiHrevirDV
egatloVtuptuOwoLrevirDV
gniwStuptuOrevirDlatoTV
egatloVdlohserhTrevieceRDLOHSERHT1.0+EEV5.1-CCVV
Absolute Maximum Ratings
retemaraPlobmySniMpyTxaMstinU
ylppuSrewoPgolanAlatoTEEV-CCV31V
ylppuSrewoPgolanAevitisoPCCV0.5+31V
ylppuSrewoPgolanAevitageNEEV0.4-5.0V
egatloVtuptuOhgiHrevirDV
egatloVtuptuOwoLrevirDV
gniwStuptuOrevirDV
HGIH
erutarepmeTgnitarepOtneibmAAT
HGIH
HGIH
WOL
V-
WOL
JT
HGIH
WOL
V-
WOL
5.2+EEVCCVV
EEVV3-CCVV
011V
0
0
5.-EEV5.+CCVV
5.-EEV5.+CCVV
5-21V
07+
521+
o
C
o
C
egatloVdlohserhTrevieceRDLOHSERHT5.-EEV5.+CCVV
stupnIlatigiDNIATAD
*NERVD
ylppuSrewoPlatigiDDDV05.6V
erutarepmeTgnitarepOtneibmAAT55-521+
erutarepmeTegarotSST56-051+
erutarepmeTnoitcnuJJT051+
erutarepmeTgniredloSLOST062
5.-DNG5.+DDVV
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. This is a stress rating only , and functional operation of the device at these, or any other conditions
beyond those listed, is not implied. Exposure to absolute maximum conditions for extended periods may
affect device reliability.
2000 Semtech Corp.
11
www.semtech.com
o
C
o
C
o
C
o
C
EDGE HIGH-PERFORMANCE PRODUCTS
DC Characteristics
retemaraPlobmySniMpyTxaMstinU
scitsiretcarahCrevieceR/revirD
Edge649
gniwSegatloVtuptuOV
)1etoN(tnerruCtuptuOrevirDCDI
ecnadepmItuptuOR
ecnaticapaCniPTUDC
V-
HGIH
WOL
TUO
TUO
TUO
011V
521-521+Am
38 21
Ω
02Fp
egatlovtuptuOTUD>7:0<TUDEEVCCVV
leveLdlohserhTrevieceRV
DLOHSERHT
1.0+EEV5.1-CCVV
tnerruCsaiBdlohserhT00.1Aµ
tnerruCtupnIegakaeLTUDI
SAIB
200.0.1Aµ
egatloVtesffOrevieceRSOV001-52+001Vm
tnerruCylppuSrewoPtnecseiuQ
ylppuSrewoPevitisoP
ylppuSrewoPevitageN
ylppuSrewoPlatigiD
CCI
EEI
DDI
52
52
02
04
04
53
moordaeHrevirD
EEVothgiHrevirD
V
CCVotwoLrevirD
V-
HGIH
EE
V-CCV
WOL
5.2
0.3
V
V
stupnIlatigiD
)7:0(*NERVD,)7:0(NIATAD
Am
Am
Am
egatloVhgiHtupnIHIV
egatloVwoLtupnILIV
tnerruCtupnII
ecnaticapaCtupnIC
NIM
XAM
NI
NI
0.2V
stuptuOlatigiD
)7:0(TUOATAD
)2etoN(hgiHegatloVtuptuOHOV4.-DDVV
)3etoN(woLegatloVtuptuOLOV4.+DNGV
tnerructuptuOCDI
TUO
4-4Am
Note 1 :Output current specification is per individual driver.
Note 2:Output current of 4 mA.
Note 3:Output current of –4 mA.