查询ZM-PTZ10B供应商
ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
Features
1) Small surface mounting type
2) 1W of power can be obtained despite compact size
3) High surge withstand level
Applications
1) Voltage regulation and voltage limiting
2) Voltage surge absorption
LL-41
Absolute Maximum Ratings (T
Symbol Value Unit
Power Dissipation 1) P
Junction Temperature Tj 150 OC
Storage Temperature Range TS -55 to +150
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
= 25oC)
a
1 W
tot
O
C
SEMTECH ELECTRONICS LTD.
®
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Zener Voltage Range Operating Resistance Reverse current
I
TYPE
Min. Max.
ZM-PTZ3.6B 3.6 4 40 15 40 20 1
ZM-PTZ3.9B 3.9 4.4 40 15 40 20 1
ZM-PTZ4.3B 4.3 4.8 40 15 40 20 1
ZM-PTZ4.7B 4.7 5.2 40 10 40 20 1
ZM-PTZ5.1B 5.1 5.7 40 8 40 20 1
ZM-PTZ5.6B 5.6 6.3 40 8 40 20 1.5
ZM-PTZ6.2B 6.2 7 40 6 40 20 3
ZM-PTZ6.8B 6.8 7.7 40 6 40 20 3.5
ZM-PTZ7.5B 7.5 8.4 40 4 40 20 4
ZM-PTZ8.2B 8.2 9.3 40 4 40 20 5
ZM-PTZ9.1B 9.1 10.2 40 6 40 20 6
ZM-PTZ10B 10 11.2 40 6 40 10 7
ZM-PTZ11B 11 12.3 20 8 20 10 8
ZM-PTZ12B 12 13.5 20 8 20 10 9
ZM-PTZ13B 13.3 15 20 10 20 10 10
ZM-PTZ15B 14.7 16.5 20 10 20 10 11
ZM-PTZ16B 16.2 18.3 20 12 20 10 12
ZM-PTZ18B 18 20.3 20 12 20 10 13
ZM-PTZ20B 20 22.4 20 14 20 10 15
ZM-PTZ22B 22 24.5 10 14 10 10 17
ZM-PTZ24B 24 27.6 10 16 10 10 19
ZM-PTZ27B 27 30.8 10 16 10 10 21
ZM-PTZ30B 30 34 10 18 10 10 23
ZM-PTZ33B 33 37 10 18 10 10 25
ZM-PTZ36B 36 40 10 20 10 10 27
Vz (V) Zz (Ω)
I
Z
(mA)
Max.
I
Z
(mA)
Max.
1) The Zener voltage is measured 40ms after power is supplied.
The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated
2)
current (Iz).
(uA)
R
VR
(V)
SEMTECH ELECTRONICS LTD.
®
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
1200
W)
(m
800
issipation
400
Power d
0
0.10
)
0.08
C
/
%
0.04
ent (
i
c
i
f
ef
0
co
ure
t
-0.04
era
mp
Te
-0.08
Derating curve
Glass epoxy substrate
32x30x1.6(mm)
Ceramic substrate
82x30x1.0(mm)
Individual part
(not mounted)
87.5 100 200
50
Ta (C)
Zener voltage - temp.
coefficient characteristics
Iz=40mA
0
20
10
Zener voltage (V)
150
Iz=20mA
125-25 C
surface
ode a
ise in di
R
100m
10m
)
(A
,
ent
r
r
100
r cu
ne
Ze
10
4030
1
Rise in surface temperature
200
ALUMINA SUBSTRATE
114X124X1.6(mm)
1.5W
( C)
e
ur
100
at
mper
te
0.5W
0
1
Mounting quantity(pcs/substrate)
4.7
5.1
4.3
3.9
3.6
1m
0
10 100
6.2
5.6
6.8
7.5
5
1W
Zener voltage characteristics
10
8.2
9.1
12
11
10
16
15
13
18
15
Zener voltage (V)
surface
ode a
ise in di
R
20
20
Rise in surface temperature
200
1.5W
( C)
e
ur
100
at
mper
te
0
1
Mounting quantity(pcs/substrate)
24
22
25
1W
0.5W
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
10 100
30
27
30
36
33
35
40
SEMTECH ELECTRONICS LTD.
®
( Wholly owned subsidiary of Honey Technology Ltd.)
Dated : 05/11/2003
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