SEMTECH SC4609 Technical data

查询SC4609EVB供应商
High Efficiency Synchronous Buck
POWER MANAGEMENT
Description Features
SC4609
Low Input, MHz Operation,
The SC4609 is a voltage mode step down (buck) regula­tor controller that provides accurate high efficiency power conversion from an input supply range of 2.7V to 5.5V. A high level of integration reduces external component count, and makes it suitable for low voltage applications where cost, size and efficiency are critical. The SC4609 is capable of producing an output voltage as low as 0.5V.
The SC4609 drives external, N-channel MOSFETs with a peak gate current of 1A. A non-overlap protection is pro­vided for the gate drive signals to prevent shoot through of the MOSFET pair. The SC4609 features lossless cur­rent sensing of the voltage drop across the drain to source resistance of the high side MOSFET during its conduction period. Its switching frequency can be pro­grammed up to 1MHz.
The quiescent supply current in sleep mode is typically lower than 10
µA. A external soft start is provided to pre-
vent output voltage overshoot during start-up.
The SC4609 is an ideal choice for converting 3.3V, 5V or other low input supply voltages. It’s available in 12 pin MLP package.
Asynchronous start upProgrammable switching frequency up to 1MHzBiCMOS voltage mode PWM controller2.7V to 5.5V input voltage rangeOutput voltage as low as 0.5V+/-1% reference accuracySleep mode (Icc = 10µA typ)Adjustable lossless short circuit current limitingCombination pulse by pulse & hiccup mode
current limit
High efficiency synchronous switching1A peak current driverExternal soft start12-pin MLP Lead-free package, fully WEEE and RoHS
compliant
Applications
Distributed power architectureServers/workstationsLocal microprocessor core power suppliesDSP and I/O power suppliesBattery-powered applicationsTelecommunications equipmentData processing applications
D2
D2
R13
R13
1
2.2n
2.2n
R1
R1
14.3k
14.3k
1
U1
U1
12
12
BST
C3
C3
4.7u
4.7u
C16
C16
560pF
560pF
*External components can be modified to provide a Vout as low as 0.5V
*External components can be modified to provide a Vout as low as 0.5V
1
1
2
2
3
3
4
4
5
5
BST
VCC
VCC
ISET
ISET
COMP
COMP
FSET
FSET
VSENSE
VSENSE
C1
C1
180p
180p
C2
C2
R3
R3
1u
1u
C17
C17
PHASE
PHASE
SC4609
SC4609
DRVH
DRVH
DRVL
DRVL
PGND
PGND
AGND
AGND
SS
SS
Css
Css
22u
22u
Vin=2.7V - 5.5V
Vin=2.7V - 5.5V
C10
C10
220u
1.8u
1.8u
220u
L1
L1
C6
C6
330u
330u
M11
M11
R6
R6
11
11
1
1
10
10
R5
R5
9
9
1
1
8
8
7
7
6
6
M2
M2
C13
C13
C14
C14
22u
22u
22u
22u
Vout=1.5V (as low as 0.5V*) / 12A
Vout=1.5V (as low as 0.5V*) / 12A
C5
C4
C5
C4
22u
22u
22u
22u
4.7n
4.7n
R8
R8
200
200
C9
C9
10k
10k
4.99k
4.99k
R7
R7
R9
R9
Revision: February 8, 2006
1 www.semtech.com
SC4609
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied.
retemaraPlobmySmumixaMstinU
)6V
V(egatloVylppuS
CC
DNGP 3.0±V
stnerruC)LVRD,HVRD(srevirDtuptuO
52.0±A
suounitnoC
kaeP
00.1±A
)SS,TESI,TESF,PMOC,ESNESV(stupnI 6ot3.0-V
TSB 21V
ESAHP 6ot3.0-V
sn05<esluptesluPESAHP 7ot2-V
egnaRerutarepmeTtneibmAgnitarepOT
egnaRerutarepmeTegarotST
erutarepmeTnoitcnuJmumixaMT
s04-01,erutarepmeTwolfeRRIkaePT
A
GTS
J
GKP
58+ot04-C°
051+ot56-C°
051+C°
062C°
)ledoMydoBnamuH(gnitaRDSEDSE4Vk
All voltages with respect to AGND. Currents are positive into, negative out of the specified terminal.
Electrical Characteristics
Unless otherwise specified, VCC = 3.3V, CT = 270pF, TA = -40°C to 85°C, TA=T
retemaraPsnoitidnoCtseTniMpyTxaMtinU
J
Note: (1). Guaranteed by design.
llarevO
egatloVylppuS 5.5V
peelS,tnerruCylppuSV0=TESF0151Aµ
gnitarepO,tnerruCylppuSV
dlohserhTno-nruTCCVT
A
=V5.5257.3Am
CC
C°58otC°04-=7.2V
siseretsyHffo-nruTCCV 053Vm
reifilpmArorrE
egatloVtupnI
T
A
C°52=594.05.0505.0
)ecnerefeRlanretnI(
V
CC
T
A
tnerruCsaiBESNESVV
)1(
niaGpooLnepO
)1(
htdiwdnaBniaGytinU
V
PMOC
T,V5.5-V7.2=
A
V5.0=002An
ESNES
C°52=5294.05.05705.0
C°58otC°04-=5294.05705.0
V5.2ot5.0=09Bd
8zHM
2 2006 Semtech Corp. www.semtech.com
V
POWER MANAGEMENT
Electrical Characteristics (Cont.)
Unless otherwise specified, VCC = 3.3V, CT = 270pF, TA = -40°C to 85°C, TA=T
retemaraPsnoitidnoCtseTniMpyTxaMtinU
).tnoC(reifilpmArorrE
SC4609
J
)1(
etaRwelS
hgiHTUOVI
woLTUOVI
PMOC
PMOC
Am5.5-=V
Am5.5=3.054.0
5.0-VCC3.0-V
CC
4.2sµ/V
rotallicsO
ycaruccAlaitinIT
ytilibatSegatloVT
A
tneiciffeoCerutarepmeTT
)1(
ycneuqerFnoitarepOmuminiM
)1(
ycneuqerFnoitarepOmumixaM
A
V,C°52=
A
C°52=525575526zHk
CC
V5.5otV7.2=50.0V/%
C°58otC°04-=20.0C°/%
05zHk
yellaVotkaePpmaR 1V
egatloVkaePpmaR 3.1V
egatloVyellaVpmaR 3.0V
timiLtnerruC,tratStfoS,peelS
dlohserhTpeelSTESFtaderusaeM57Vm
tnerruCsaiBtupnIpeelSV
)1(
emiTtratStfoSelbammargorP
V0=1-Aµ
CNYS
Fn02=C57.1sm
M1zH
tnerruCegrahCtratStfoST
tnerruCsaiBTESIT
TESIfotneiciffeoCerutarepmeT 82.0C°/%
)1(
emiTknalBtimiLtnerruC
evirDetaG
emiTFFOmuminiMHVRDT
)HVRD(ecruoSkaePI,V3.3=sgV
)HVRD(kniSkaePI,V3.3=sgV
)1(
)LVRD(ecruoSkaeP
)LVRD(kniSkaePI,V3.3=sgV
emiTesiRtuptuOC,V3.3=sgV
emiTllaFtuptuOC,V3.3=sgV
)1(
palrevO-noNmuminiM
A
J
C°52=57.5-Aµ
C°52=54-05-55-Aµ
031sn
A
V,C°52=
I,V3.3=sgV
0=061002sn
ESNES
ECRUOS
KNIS
ECRUOS
KNIS
TUO
TUO
Am001=7.2
Am001=8.1
Am001=2.2
Am001=5.1
Fn7.4=53sn
Fn7.4=72sn
Ω Ω Ω Ω
04sn
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POWER MANAGEMENT
SC4609
Pin Configuration
BST
12
1VCC
2ISET
3COMP
FSET5VSENSE6SS
(MLP12, 4x4)
Pin Descriptions
#niPemaNniPnoitcnuFniP
1CCV RSE/LSEwolFµ7.4ot1.0ahtiwDNGotnipsihtssapyB.CIehtrofliarylppusevitisoP
TOP VIEW
DRVH PHASE
11 10
4
9 DRVL
8 PGND
7 AGND
Ordering Information
)1(
rebmuNtraP
)2(
TRTLM9064CS
BVE9064CSdraoBnoitaulavE
Notes: (1) Only available in tape and reel packaging. A reel contains 3000 devices. (2) Lead free product. This product is fully WEEE and
RoHS compliant.
.roticapaccimarec
eciveD
21-PLM
2TESI ehtsesu9064CSehT.TEFSOMedishgihehtnitnerructimilotdesusinipTESIehT
3PMOC detrevnisituptuosihttaegatlovehT.reifilpmarorreegatlovehtfotuptuoehtsisihT
4TESF gnimitlanretxenahguorhtycneuqerfrotallicsoMWPehtstesotdesusinipTESFehT
5ESNESV egatlovtuptuoehtsasevresdnareifilpmaegatlovehtfotupnignitrevniehtsinipsihT
Vehtssorcaegatlov
NI
timiltnerrucehT.timiltnerrucehttesotredronisnipTESIdna
tiucriCnoitacilppAlacipyTehtni3R(rotsiserlanretxenafoeulavehtybtessidlohserht
esnesehtssorcapordegatlovehtgnirapmocybdemrofrepsignitimiltnerruC.)margaiD
edishgihehtfoecnatsiserecruosotniardehtssorcapordegatlovehthtiwrotsiser
otniardehtssorcapordegatlovehT.doirepnoitcudnocs’TEFSOMehtgnirudTEFSOM
VehtmorfdeniatbosiTEFSOMedishgihehtfoecnatsiserecruos
NI
.nipESAHPdna
gal-daelA.rotarapmocMWPehtfotupnignitrevni-nonehtotdetcennocdnayllanretni
retlifCLelopowtehtrofsetasnepmocnipESNESVehtotnipPMOCehtmorfkrowten
redronideriuqersikrowtengal-daelehT.lortnocedomegatlovottnerehniscitsiretcarahc
.poollortnocedomegatlovehtfoecnamrofrepcimanydehtezimitpoot
dellupsiTESFehtnehW.nipDNGehtotnipTESFehtmorfdetcennocsitahtroticapac
sinoitarepoedompeelS.dekovnisinoitarepoedompeelssti,Vm57wolebdlehdna
tnerrucylppuslacipytehT.Vm57wolebegatlovaotnipTESFehtgnipmalcybdekovni
gnicalpybedomsuonorhcnysnidetarepoebnac9064CSehT.Aµ01siedompeelsgnirud
ehtfolanimretrehtoehT.dnuorgdnaroticapacgnimitehtneewtebseiresnirotsisera
.nipTESFehtotdetcennocniamerlliwroticapacgnimit
eulavecnereferlanretninaotderapmocsiESNESV.retrevnockcuBehtroftniopkcabdeef
.derisedsiV5.0fotuptuonanehwegatlovtuptuoehtotderiwdrahsiESNESV.V5.0fo
lacipyTehtni9Rdna7R(yrassecensikrowtenredividrotsisera,segatlovtuptuorehgihroF
.)margaiDtiucriCnoitacilppA
6SS tnednepednisiemittratstfosehT.emittratstfosehtstesdnuorgotroticapacA.tratstfoS
3
=
.C105.87SS
lanretxeehtsiCerehWsadenifedsidnaycneuqerfgnihctiwsfo
.dnocesniemittratstfosdnaFnniroticapac
4 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Pin Descriptions (Cont.)
#niPemaNniPnoitcnuFniP
7DNGA.dnuorggolanA
8DNGP.dnuorgrewoP
9LVRD srevirdtuptuoehT.TEFSOM)reifitcersuonorhcnys(ediswolehtfoetagehtsevirdLVRD
01ESAHP ehtsesu9064CSehT.TEFSOMedishgihehtnitnerructimilotdesusinipESAHPehT
11HVRD detarerasrevirdtuptuoehT.TEFSOM)hctiwsniam(edishgihehtfoetagehtsevirdHVRD
SC4609
otslangisevirdyratnemelpmocsedivorpyrtiucricMWPehT.stnerruckaepA1rofdetarera
ybdetneverpsisTEFSOMlanretxeehtfonoitcudnocssorcehT.segatstuptuoeht
emitahtiwnoitcnujnocniriapTEFSOMehtfosniprevirdehtnoegatlovehtgnirotinom
.scitsiretcarahcffo-nrutTEFrofdezimitpoyaled
Vehtssorcaegatlov
NI
VehtmorfdeniatbosiTEFSOMedishgihehtfoecnatsiserecruos
NI
.scitsiretcarahcffo-nrutTEFrofdezimitpo
timiltnerrucehT.timiltnerrucehttesotredroninipTESIdna
tiucriCnoitacilppAlacipyTehtni3R(rotsiserlanretxenafoeulavehtybtessidlohserht
esnesehtssorcapordegatlovehtgnirapmocybdemrofrepsignitimiltnerruC.)margaiD
edishgihehtfoecnatsiserecruosotniardehtssorcapordegatlovehthtiwrotsiser
otniardehtssorcapordegatlovehT.doirepnoitcudnocs’TEFSOMehtgnirudTEFSOM
.nipESAHPdna
ehtotslangisevirdyratnemelpmocsedivorpyrtiucricMWPehT.stnerruckaepA1rof
gnirotinomybdetneverpsisTEFSOMlanretxeehtfonoitcudnocssorcehT.segatstuptuo
yaledemitahtiwnoitcnujnocniriapTEFSOMehtfosniprevirdehtnoegatloveht
21TSB otstcennocTSB.TEFSOMedishgihlennahC-NnaevirdotretrevnocehtselbanenipsihT
DAPLAMREHT detcennoctoN.saivelpitlumgnisuenalpdnuorgottcennoC.sesoprupgniknistaehrofdaP
aotegatlovnipTSBehtstsoobtiucricpmupegrahcehT.tiucricpmupegrahclanretxeeht
.TEFSOMedishgihehtfoetagehtgnivirdroflevelegatlovecruos-ot-etagtneiciffus
.yllanretni
5 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Block Diagram
SC4609
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POWER MANAGEMENT
Application Information
Enable
The SC4609 is enabled by applying a voltage greater than
2.7 volts to the VCC pin. The SC4609 is disabled when VCC falls below 2.35 volts or when sleep mode opera­tion is invoked by clamping the FSET pin to a voltage below 75mV. 10µA is the typical current drawn through the VCC pin during sleep mode. During the sleep mode, the high side and low side MOSFETs are turned off and the internal soft start voltage is held low.
Oscillator
SC4609
The maximum frequency of the external clock signal can be higher than the natural switching frequency by about 10%.
FSET
FSET
C
C
FSET
External
External Clock
Clock Signal
Signal
C
C
56pF
56pF
D
D
FSET
R
R
A
100
100
R
R
SYNC
SYNC
A
1k
1k
SC4609
SC4609
The FSET pin is used to set the PWM oscillator frequency through an external timing capacitor that is connected from the FSET pin to the GND pin. The resulting ramp waveform ion the FSET pin is a triangle at the PWM fre­quency with a peak voltage of 1.3V and a valley voltage of 0.3V. 200ns minimum OFF time for the top switch allows the bootstrap capacitor to be charged during each cycle. The capacitor tolerance adds to the accuracy of the oscillator frequency. The approximate operating fre­quency and soft start time are both determined by the value of the external timing capacitor as shown in Table
1.
gnimiTlanretxE
)Fp(eulaVroticapaC
0210001
072575
074053
065592
)zHk(ycneuqerF
Table 1. Operating Frequency value Based on the
Value of the External Timing Capacitor Placed Across
the FSET and GND Pins
Synchronous mode operation is invoked by using a sig-
nal from an external clock. A low value resistor (100
typical) must be inserted in series with the timing capaci­tor between the timing capacitor and the GND pin. The other terminal of the timing capacitor will remain con­nected to the FSET pin. The transformed external clock signal is then connected to the junction of the external timing capacitor and the added resistor R
as shown
SYNC
in Figure 1.
Figure 1
UVLO
When the FSET pin is not pulled and held below 75mV, the voltage on the Vcc pin determines the operation of the SC4609. As Vcc increases during start up, the UVLO block senses Vcc and keeps the high side and low side MOSFETs off and the internal soft start voltage low until Vcc reaches 2.7V. If no faults are present, the SC4609 will initiate a soft start when Vcc exceeds 2.7V. A hyster­esis (350mV) in the UVLO comparator provides noise immunity during its start up.
Soft Start
The soft start function is required for step down control­lers to prevent excess inrush current through the DC bus during start up. Generally this can be done by sourcing a controlled current into a timing capacitor and then using the voltage across this capacitor to slowly ramp up the error amp reference. The closed loop creates narrow width driver pulses while the output voltage is low and allows these pulses to increase to their steady state duty cycle as the output voltage reaches its regulated value. With this, the inrush current from the input side is con­trolled. The duration of the soft start in the SC4609 is controlled by an external capacitor. SS, the startup time is difined as:
3
=
C105.87SS
where, C is the value of the external capacitor in nF, and SS is the startup time in second.
7 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Application Information (Cont.)
SC4609
Over Current Protection
The SC4609 detects over current conditions by sensing the voltage across the drain-to-source of the high side MOSFET. The SC4609 determines the high side MOS­FET current level by sensing the drain-to-source conduc­tion voltage across the high side MOSFET via the V
(see
in
the Typical Application Circuit on page 1) and PHASE pin during the high side MOSFET’s conduction period. This voltage value is then compared internally to a user pro­grammed current limit threshold. Note that user should place Kelvin sensing connections directly from the high side MOSFET source to the PHASE pin.
The current limit threshold is programmed by the user based on the RDS(on) of the high side MOSFET and the value of the external set resistor RSET (where RSET is represented by R3 in the applications schematics of this document). The SC4609 uses an internal current source to pull a 50µA current from the input voltage to the ISET pin through external resistor RSET. The current limit threshold resistor (RSET) value is calcu­lated using the following equation:
RI
)ON(DSMAX
µ
A50
The R
=
R
SET
sensing used in the SC4609 has an addi-
DS(ON)
tional feature that enhances the performance of the over current protection. Because the R
has a positive
DS(ON)
temperature coefficient, the 50µA current source has a positive coefficient of about 0.28%/C° providing first or­der correction for current sensing vs temperature. This compensation depends on the high amount of thermal transferring that typically exists between the high side N­MOSFET and the SC4609 due to the compact layout of the power supply.
When the converter detects an over current condition (I > I
) as shown in Figure 2, the first action the SC4609
MAX
takes is to enter the cycle by cycle protection mode (Point B to Point C), which responds to minor over current cases. Then the output voltage is monitored. If the over current and low output voltage (set at 70% of nominal output voltage) occur at the same time, the Hiccup mode op­eration (Point C to Point D) of the SC4609 is invoked and the internal soft start capacitor is discharged. This is like a typical soft start cycle:
A
V
V
0.7
6.0
6.0
V
V
nomO
nomO
V
V
O
O
A
nomO
nomO
D
D
I
I
O
O
I
I
MAX
MAX
B
B
C
C
Figure 2. Over current protection characteristic of SC4609
Power MOSFET Drivers
The SC4609 has two drivers which are optimized for driv­ing external power N-Channel MOSFETs.. The driver block consists two 1 Amp drivers. DRVH drives the high side N-MOSFET (main switch), and DRVL drives the low side N-MOSFET (synchronous rectifier transistor). The output drivers also have gate drive non-overlap mechanism that provides a dead time between DRVH and DRVL transitions to avoid potential shoot through problems in the external MOSFETs. By using the proper design and the appropriate MOSFETs, the SC4609 is capable of driving a converter with up to 12A of output
the delay from the
current. As shown in Figure 3, top MOSFET off to the bottom MOSFET on is adaptive by detecting the voltage of the phase node.
td1
,
td2, the delay
from the bottom MOSFET off to the top MOSFET on is fixed, is 40ns for the SC4609. This control scheme guar­antees avoidance of cross conduction or shoot through between the upper and lower MOSFETs and also mini­mizes the conduction loss in the body diode of the bot­tom MOSFET for high efficiency applications.
8 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
SC4609
Application Information (Cont.)
TOP MOSFET Gate Drive
TOP MOSFET Gate Drive
BOTTOM MOSFET Gate Drive
BOTTOM MOSFET Gate Drive
Ground
Phase node
Phase node
t
t
t
d1
d1
t
d2
d2
Figure 3. Timing Waveforms for Gate Drives and Phase Node
Inductor Selection
The factors for selecting the inductor include its cost, efficiency, size and EMI. For a typical SC4609 applica­tion, the inductor selection is mainly based on its value, saturation current and DC resistance. Increasing the in­ductor value will decrease the ripple level of the output voltage while the output transient response will be de­graded. Low value inductors offer small size and fast tran­sient responses while they cause large ripple currents, poor efficiencies and more output capacitance to smooth out the large ripple currents. The inductor should be able to handle the peak current without saturating and its copper resistance in the winding should be as low as possible to minimize its resistive power loss. A good trade­off among its size, loss and cost is to set the inductor ripple current to be within 15% to 30% of the maximum output current. The inductor value can be determined according to its operating point and the switching frequency as follows:
)VV(V
L
=
OUTINOUT
∆⋅
IIfV
OMAXsIN
Where: fs = switching frequency and
I = ratio of the peak to peak inductor current to the
maximum output load current.
The peak to peak inductor current is:
Ground
I
pp
+=
II
OMAXPEAK
2
The power loss for the inductor includes its core loss and copper loss. If possible, the winding resistance should be minimized to reduce inductor’s copper loss. The core loss can be found in the manufacturer’s datasheet. The inductor’ copper loss can be estimated as follows:
COPPER
LRMS
WINDING
2
RIP =
Where: I
is the RMS current in the inductor. This current can
LRMS
be calculated as follow is:
1
2
OMAXLRMS
1II +=
I
3
Output Capacitor Selection
Basically there are two major factors to consider in se­lecting the type and quantity of the output capacitors. The first one is the required ESR (Equivalent Series Re­sistance) which should be low enough to reduce the volt­age deviation from its nominal one during its load changes. The second one is the required capacitance, which should be high enough to hold up the output voltage. Before the SC4609 regulates the inductor current to a new value during a load transient, the output capacitor delivers all the additional current needed by the load. The ESR and ESL of the output capacitor, the loop parasitic inductance between the output capacitor and the load combined with inductor ripple current are all major contributors to the output voltage ripple. Surface mount speciality poly­mer aluminum electrolytic chip capacitors in UE series from Panasonic provide low ESR and reduce the total capacitance required for a fast transient response. POSCAP from Sanyo is a solid electrolytic chip capacitor that has a low ESR and good performance for high fre­quency with a low profile and high capacitance. Above mentioned capacitors are recommended to use in SC4609 application.
=
III
OMAXpp
After the required inductor value is selected, the proper selection of the core material is based on the peak in­ductor current and efficiency requirements. The core must be able to handle the peak inductor current I
PEAK
without saturation and produce low core loss during the high frequency operation is:
Input Capacitor Selection
The input capacitor selection is based on its ripple cur­rent level, required capacitance and voltage rating. This capacitor must be able to provide the ripple current by the switching actions. For the continuous conduction mode, the RMS value of the input capacitor can be cal­culated from:
9 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Application Information (Cont.)
CIN
=
II
OMAX
)RMS(
2
V
IN
SC4609
)VV(V
OUTINOUT
Where:
= the boost current and
I
B
V
= discharge ripple voltage.
D
This current gives the capacitor’s power loss as follows:
CIN
2
RIP =
)RMS(CIN
)ESR(CIN
This capacitor’s RMS loss can be a significant part of the total loss in the converter and reduce the overall con­verter efficiency. The input ripple voltage mainly depends on the input capacitor’s ESR and its capacitance for a given load, input voltage and output voltage. Assuming that the input current of the converter is constant, the required input capacitance for a given voltage ripple can be calculated by:
=
IC
OMAXIN
)D1(D
)RIV(fs
CINOMAXI
)ESR(
Where: D = VO/VI , duty ratio and
V
= the given input voltage ripple.
I
Because the input capacitor is exposed to the large surge current, attention is needed for the input capacitor. If tantalum capacitors are used at the input side of the converter, one needs to ensure that the RMS and surge ratings are not exceeded. For generic tantalum capaci­tors, it is wise to derate their voltage ratings at a ratio of 2 to protect these input capacitors.
Boost Capacitor Selection
The boost capacitor selection is based on its discharge ripple voltage, worst case conduction time and boost current. The worst case conduction time Tw can be esti­mated as follows:
1
Tw =
D
max
f
s
Where: fs = the switching frequency and Dmax = maximum duty ratio.
The required minimum capacitance for boost capacitor will be:
I
B
C =
boost
T
W
V
D
With fs = 300kH, VD=0.3V and IB=50mA, the required capacitance for the boost capacitor is:
1
1
I
B
C
boost
V
D
max
f
sD
05.0
3.0
k300
===
nF52895.0
Power MOSFET Selection
The SC4609 can drive an N-MOSFET at the high side and an N-MOSFET synchronous rectifier at the low side. The use of the high side N-MOSFET will significantly re­duce its conduction loss for high current. For the top MOSFET, its total power loss includes its conduction loss, switching loss, gate charge loss, output capacitance loss and the loss related to the reverse recovery of the bot­tom diode, shown as follows:
fVI
TOTAL_TOP
2
RIP
RMS_TOP
+=
ON_TOP
V
GATE
sIPEAK_TOP
R
G
fV)QQ(fVQ)QQ(
++++
sIrrOSSsGATEGT2GSGD
Where: RG = gate drive resistor, QGD = the gate to drain charge of the top MOSFET, Q
= the gate to source charge of the top MOSFET,
GS2
Q
= the total gate charge of the top MOSFET,
GT
Q
= the output charge of the top MOSFET and
OSS
Qrr = the reverse recovery charge of the bottom diode.
For the top MOSFET, it experiences high current and high voltage overlap during each on/off transition. But for the bottom MOSFET, its switching voltage is the bottom diode’s forward drop during its on/off transition. So the switching loss for the bottom MOSFET is negligible. Its total power loss can be determined by:
2
TOTAL_BOT
RMS_BOT
V_IfVQRIP ++=
FAVGDsGATEGBON_BOT
Where: Q
= the total gate charge of the bottom MOSFET and
GB
VF = the forward voltage drop of the bottom diode.
10 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Application Information (Cont.)
For a low voltage and high output current application such as the 3.3V/1.5V@12A case, the conduction loss is of­ten dominant and selecting low R ticeably improve the efficiency of the converter even though they give higher switching losses.
The gate charge loss portion of the top/bottom MOSFET’s total power loss is derived from the SC4609. This gate charge loss is based on certain operating conditions (fs, V
, and IO).
GATE
The thermal estimations have to be done for both MOSFETs to make sure that their junction temperatures do not exceed their thermal ratings according to their total power losses P thermal resistance
, ambient temperature TA and their
TOTAL
RθJA
as follows:
MOSFETs will no-
DS(ON)
SC4609
Figure 4. Compensation network provides 3 poles and 2 zeros.
For voltage mode step down applications as shown in Figure 4, the power stage transfer function is:
P
TOTAL
+<
TT
A(max)J
R
JA
θ
Loop Compensation Design
For a DC/DC converter, it is usually required that the converter has a loop gain of a high cross-over frequency for fast load response, high DC and low frequency gain for low steady state error, and enough phase margin for its operating stability. Often one can not have all these properties at the same time. The purpose of the loop compensation is to arrange the poles and zeros of the compensation network to meet the requirements for a specific application.
The SC4609 has an internal error amplifier and requires the compensation network to connect among the COMP pin and VSENSE pin, GND, and the output as shown in Figure 4. The compensation network includes C1, C2, R1, R7, R8 and C9. R9 is used to program the output voltage according to
R
7
+=
)
O
1(5.0V
R
9
s
+
1
1
CR
=
V)s(G
IVD
L
s1
R
4C
2
1
++
CLs
41
Where: R = load resistance and RC = C4’s ESR.
The compensation network will have the characteristic as follows:
s
+
1
ω
2Z
s
1
+
ω
2P
COMP
s
+
1
ω
=
)s(G
ω
1ZI
s
s
+
1
ω
1P
Where
=ω
I
1
+
)CC(R
217
1
=ω
1Z
CR
21
=ω
2Z
=ω
1P
11 2006 Semtech Corp. www.semtech.com
1
+
C)RR(
987
+
CC
21
CCR
211
POWER MANAGEMENT
Application Information (Cont.)
SC4609
1
=ω
2P
CR
98
After the compensation, the converter will have the fol­lowing loop gain:
s
+
1
s
1
ω⋅
V
M
==
)s(G)s(GG)s(T
VDCOMPPWM
s
+
+
1
1sV
II
+
1
ω
ω
1Z
s
ω
1P
2Z
s
+
1
ω
2P
1
CR
4C
L
2
1
++
s1
CLs
1
R
Where: G
= PWM gain
PWM
VM = 1.0V, ramp peak to valley voltage of SC4609
The design guidelines for the SC4609 applications are as following:
1. Set the loop gain crossover corner frequency ω for given switching corner frequency ω
= 2pfs,
S
2. Place an integrator at the origin to increase DC and low frequency gains.
3. Select ωZ1 and ω
ω
to damp the peaking and the loop gain has a
O
such that they are placed near
Z2
-20dB/dec rate to go across the 0dB line for obtaining a wide bandwidth.
4. Cancel the zero from C4’s ESR by a compensator
pole ωP1 (ωP1 = ω
= 1/( RCC4)).
ESR
5. Place a high frequency compensator pole ωp2 (ωp = πf
) to get the maximum attenuation of the switch-
s
ing ripple and high frequency noise with the adequate
phase lag at ω
.
C
The compensated loop gain will be as given in Figure 5:
Layout Guidelines
In order to achieve optimal electrical, thermal and noise performance for high frequency converters, special at­tention must be paid to the PCB layouts. The goal of lay­out optimization is to identify the high di/dt loops and minimize them. The following guideline should be used to ensure proper functions of the converters.
1. A ground plane is recommended to minimize noises and copper losses, and maximize heat dissipation.
2. Start the PCB layout by placing the power compo­nents first. Arrange the power circuit to achieve a clean power flow route. Put all the connections on one side of the PCB with wide copper filled areas if possible.
3. The Vcc bypass capacitor should be placed next to
C
the Vcc and GND pins.
4. The trace connecting the feedback resistors to the output should be short, direct and far away from the noise sources such as switching node and switching components.
5. Minimize the traces between DRVH/DRVL and the gates of the MOSFETs to reduce their impedance to drive the MOSFETs.
6. Minimize the loop including input capacitors, top/bot­tom MOSFETs. This loop passes high di/dt current.
2
Make sure the trace width is wide enough to reduce copper losses in this loop.
7. ISET and PHASE connections to the top MOSFET for current sensing must use Kelvin connections.
8. Maximize the trace width of the loop connecting the inductor, bottom MOSFET and the output capacitors.
T
Gvd
0dB
Power stage
ω
Z1
ω
o
-
Loop gain
ω
Z2
ω
-
c
p1
ω
p2
ω
ω
ESR
Figure 5. Asymptotic diagrams of power stage and its loop gain
9. Connect the ground of the feedback divider and the compensation components directly to the GND pin of the SC4609 by using a separate ground trace. Then connect this pin to the ground of the output capacitor as close as possible
12 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Application Information (Cont.)
Design Example 1. 3V to1.5V @10A application with SC4609
D2
D2
1u
1u
C17
C17
R13
C3
C3
4.7u
4.7u
C16
C16
R13
1
1
470pF
470pF
12
12
1
1
2
2
3
3
4
4
5
5
U1
U1
BST
BST
VCC
VCC
ISET
ISET
COMP
COMP
FSET
FSET
VSENSE
VSENSE
SC4609
SC4609
DRVH
DRVH
PHASE
PHASE
DRVL
DRVL
PGND
PGND
AGND
AGND
SS
SS
Css
Css
22n
22n
R6
R6
11
11
0
0
10
10
R5
R5
9
9
0
0
8
8
7
7
6
6
R3
R3
C1
C1
1.8n
1.8n
C2
C2
2.2n
2.2n
R1
R1
14.3k
14.3k
M1
M1
M2
M2
C10
C10
220u
220u
L1
L1
2.3u
2.3u
C7
C7
330u
330u
Vin=3V - 5.5V
Vin=3V - 5.5V
C13
C14
C13
C14
22u
22u
22u
22u
C4
C4
C5
C5
22u
22u
22u
22u
Vout = 1.5V/10A
Vout = 1.5V/10A
C9
C9
R7
R7
8.2n
8.2n
5.76k
5.76k
R8
R8
107
107
SC4609
R9
R9
2.87k
2.87k
13 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Bill of Materials
metIytQecnerefeReulaVrerutcafunaM/.oNtraP
111CFn8.1
212CFn2.2
3171CFu1
44 41C,31C,5C,4C6021,Fu22M622J0R5X5223C:N/PKDT
517C0782,Fu033LM033BPT6:N/PoynaS
619CFn2.8
7161CFp074
812D1TL0250RBM1TL0250RBM:N/PimeSNO
SC4609
911LHu3.2
012 2M,1M8-OS,kcaprewoPPD2887iS:N/PyahsiV
1111RK3.41
2113RK33.1
3117RK67.5
4118R701
5119RK78.2
61131R1
7113C5080,Fu7.4
81101C0782,Fu022LM022BPT6:N/PoynaS
911ssCFn22
0211U9064CSTRTLMI9064CS:N/PhcetmeS
.egakcap3060htiwnoisicerp%1evahsrotsiserlla,deificepssselnU
%02-/+erasroticapaclladna%1-/+erasrotsiseR
cinortcelErepooC
3R2-1CH:N/P
14 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
PCB Layout
SC4609
COMPONENT SIDE (TOP)
COMPONENT SIDE (BOTTOM)
15 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
PCB Layout (Cont.)
SC4609
(TOP)
(BOTTOM)
(INTER LAYER 1)
(INTER LAYER 2)
16 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Outline Drawing - MLP-12
PIN 1
INDICATOR
(LASER MARK)
A
aaa C
A D
A1
D1
B
E
A2
C
DIM
SEATING PLANE
DIMENSIONS
INCHES
NOM
MIN
.031
A A1 A2
b
D D1
E E1
e
L
N
aaa bbb
-
.000
-
(.008)
.012
.010
.074
.085 .153 .157 .161 3.90 4.00 4.10 .074
.085
.031 BSC
.018
.022
12
.004 0.10
MILLIMETERS
MINMAX NOM
.040
0.80
.002
0.00
-
.014
0.25
.089
1.90
.089
1.90
.026
0.45
-
--
-
(0.20)
0.30
2.15
2.15
0.80 BSC
0.55 12
0.08.003
SC4609
MAX
1.00
0.05
-
0.35
4.104.003.90.161.157.153
2.25
2.25
0.65
LxN
E/2
2
E1
1
N
e
bxN
bbb C A B
D/2
NOTES:
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES).
1.
2.
COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.
17 2006 Semtech Corp. www.semtech.com
POWER MANAGEMENT
Land Pattern - MLP-12
2x (C)
H
X
SC4609
K
DIMENSIONS
DIM
C
2x G
P
2x Z
Y
G H
K P X Y Z
(.148)
.106 .091 .091 .031 .016 .041 .189
MILLIMETERSINCHES
(3.75)
2.70
2.30
2.30
0.80
0.40
1.05
4.80
NOTES:
1.
THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET.
Contact Information
Semtech Corporation
Power Management Products Division
200 Flynn Road, Camarillo, CA 93012
Phone: (805)498-2111 FAX (805)498-3804
18 2006 Semtech Corp. www.semtech.com
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