SemiWell STP6A60 Technical data
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SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
◆ Non-isolated Type
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature modulation control, lighting control and static switching relay.
T(RMS)
= 6 A )
Symbol
TO-220
1
STP6A60
2.T2
○
▼
▲
○
3.Gate
○
1.T1
2
3
Absolute Maximum Ratings ( T
= 25°C unless otherwise specified )
J
Symbol Parameter Condition Ratings Units
V
DRM
I
T(RMS)
I
TSM
2
I
P
GM
P
G(AV)
I
GM
V
GM
T
T
STG
J
Repetitive Peak Off-State Voltage 600 V
= 100 °C
R.M.S On-State Current
Surge On-State Current
t
2
I
t
Peak Gate Power Dissipation 3.0 W
Average Gate Power Dissipation 0.3 W
Peak Gate Current 2.0 A
Peak Gate Voltage 10 V
Operating Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
T
C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
6.0 A
60/66 A
18
2
A
s
Aug, 2003. Rev. 3
1/5
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
STP6A60
Electrical Characteristics
Symbol Items Conditions
V
= V
I
DRM
V
TM
+
I
GT1
-
I
GT1
-
I
GT3
+
V
GT1
-
V
GT1
-
V
GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
D
= 125 °C
T
J
= 8 A, Inst. Measurement
I
T
Ⅰ
Gate Trigger Current
Ⅱ ──
V
D
Ⅲ ──
Ⅰ
Gate Trigger Voltage
Ⅱ ──
V
D
Ⅲ ──
= 125 °C, VD = 1/2 V
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
T
= 125 °C, [di/dt]c = -3.0 A/ms,
J
V
D
Holding Current
Thermal Impedance Junction to case
, Single Phase, Half Wave
DRM
= 6 V, RL=10 Ω
= 6 V, RL=10 Ω
=2/3 V
DRM
DRM
Ratings
Min. Typ. Max.
──
─
─
──
──
0.2
5.0
─
──
──
10
──
1.0 mA
1.5 V
20
20
20
1.5
1.5
1.5
─
2.8 °C/W
Unit
mA
V
V
V/㎲
mA
2/5
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