SemiWell STF4A60 Technical data
查询STF4A60供应商
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
General Description
This device is suitable for direct coupling to TTL, HTL, CMOS
and application such as various logic functions, low power
AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
T(RMS)
= 4 A )
Symbol
TO-220F
STF4A60
UL : E228720
2.T2
○
▼
▲
○
3.Gate
○
1.T1
1
2
3
Absolute Maximum Ratings ( T
= 25°C unless otherwise specified )
J
Symbol Parameter Condition Ratings Units
V
DRM
I
T(RMS)
I
TSM
2
I
P
GM
P
G(AV)
I
GM
V
GM
T
T
STG
J
Repetitive Peak Off-State Voltage 600 V
= 99 °C
R.M.S On-State Current
Surge On-State Current
t
2
I
t
Peak Gate Power Dissipation 1.5 W
Average Gate Power Dissipation 0.1 W
Peak Gate Current 1.0 A
Peak Gate Voltage 7.0 V
Operating Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
T
C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
4.0 A
30/33 A
4.5
2
A
s
Aug, 2003. Rev. 1
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
STF4A60
Electrical Characteristics
Symbol Items Conditions
V
= V
I
DRM
V
TM
+
I
GT1
-
I
GT1
-
I
GT3
+
V
GT1
-
V
GT1
-
V
GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
D
= 125 °C
T
J
= 6 A, Inst. Measurement
I
T
Ⅰ
Gate Trigger Current
Ⅱ ──
V
D
Ⅲ ──
Ⅰ
Gate Trigger Voltage
Ⅱ ──
V
D
Ⅲ ──
= 125 °C, VD = 1/2 V
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
T
= 125 °C, [di/dt]c = -2.0 A/ms,
J
V
D
Holding Current
Thermal Impedance Junction to case
, Single Phase, Half Wave
DRM
= 6 V, RL=10 Ω
= 6 V, RL=10 Ω
=2/3 V
DRM
DRM
Ratings
Min. Typ. Max.
──
─
─
──
──
0.2
5.0
─
──
──
5.0
──
1.0 mA
1.6 V
20
20
20
1.5
1.5
1.5
─
4.0 °C/W
Unit
mA
V
V
V/㎲
mA
2/6
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