SemiWell BTA12-600B Technical data
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Preliminary
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
◆ Isolation Voltage ( V
= 1500V AC )
ISO
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.
T(RMS)
= 12 A )
BTA12-600B
UL : E228720
Symbol
TO-220F
1
1.T1
2
2.T2
○
▼
▲
○
3.Gate
○
3
Absolute Maximum Ratings ( T
= 25°C unless otherwise specified )
J
Symbol Parameter Condition Ratings Units
V
DRM
I
T(RMS)
I
TSM
2
I
P
GM
P
G(AV)
I
GM
V
GM
V
ISO
T
T
STG
J
Repetitive Peak Off-State Voltage 600 V
= 79 °C
R.M.S On-State Current
Surge On-State Current
t
2
I
t
Peak Gate Power Dissipation 5.0 W
Average Gate Power Dissipation 0.5 W
Peak Gate Current 2.0 A
Peak Gate Voltage 10 V
Isolation Breakdown Voltage(R.M.S.) A.C. 1 minute 1500 V
Operating Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 150 °C
Mass 2.0 g
T
C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
12 A
119/130 A
71
2
A
s
Mar, 2004. Rev. 0
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BTA12-600B
Electrical Characteristics
Symbol Items Conditions
V
= V
I
DRM
V
TM
+
I
GT1
-
I
GT1
-
I
GT3
+
V
GT1
-
V
GT1
-
V
GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
D
= 125 °C
T
J
= 20 A, Inst. Measurement
I
T
Ⅰ
Gate Trigger Current
Ⅱ ──
V
D
Ⅲ ──
Ⅰ
Gate Trigger Voltage
Ⅱ ──
V
D
Ⅲ ──
= 125 °C, VD = 1/2 V
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
T
= 125 °C, [di/dt]c = -6.0 A/ms,
J
V
D
Holding Current
Thermal Impedance Junction to case
, Single Phase, Half Wave
DRM
= 6 V, RL=10 Ω
= 6 V, RL=10 Ω
=2/3 V
DRM
DRM
Ratings
Min. Typ. Max.
──
─
─
──
──
0.2
10
─
──
──
20
──
2.0 mA
1.4 V
30
30
30
1.5
1.5
1.5
─
3.3 °C/W
Unit
mA
V
V
V/㎲
mA
2/6
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