SemiWell BT134-F Technical data
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Preliminary
SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( I
◆ High Commutation dv/dt
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static
switching relay.
T(RMS)
= 4 A )
Symbol
TO-126
BT134-F
2.T2
○
▼
▲
○
3.Gate
○
1.T1
3
2
1
Absolute Maximum Ratings ( T
= 25°C unless otherwise specified )
J
Symbol Parameter Condition Ratings Units
V
DRM
I
T(RMS)
I
TSM
2
I
P
GM
P
G(AV)
I
GM
V
GM
T
T
STG
J
Repetitive Peak Off-State Voltage 600 V
= 104 °C
R.M.S On-State Current
Surge On-State Current
t
2
I
t
Peak Gate Power Dissipation 5 W
Average Gate Power Dissipation Over any 20ms period 0.5 W
Peak Gate Current 2 A
Peak Gate Voltage 5 V
Operating Junction Temperature - 40 ~ 125 °C
Storage Temperature - 40 ~ 150 °C
T
C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
t = 10ms 3.1
4A
25/27 A
2
A
s
Nov, 2003. Rev. 0
1/6
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
BT134-F
Electrical Characteristics
Symbol Items Conditions
V
= V
I
DRM
V
TM
+
I
GT1
-
I
GT1
-
I
GT3
+
I
GT3
+
V
GT1
-
V
GT1
-
V
GT3
+
V
GT3
V
GD
(dv/dt)c
Repetitive Peak Off-State
Current
Peak On-State Voltage
D
= 125 °C
T
J
= 5 A, Inst. Measurement
I
T
Ⅰ
Ⅱ ──
Gate Trigger Current
V
D
Ⅲ ──
Ⅳ ──
Ⅰ
Ⅱ ──
Gate Trigger Voltage
V
D
Ⅲ ──
Ⅳ ──
= 125 °C, VD = 1/2 V
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
T
J
T
= 125 °C, [di/dt]c = -0.75 A/ms,
J
V
D
, Single Phase, Half Wave
DRM
= 6 V, RL=10 Ω
= 6 V, RL=10 Ω
=2/3 V
DRM
DRM
Ratings
Min. Typ. Max.
──
──
──
──
0.2
5.0
──
──
0.5 mA
1.7 V
25
25
25
70
1.5
1.5
1.5
2.5
Unit
mA
V
V
V/㎲
2/6
R
I
H
th(j-c)
Holding Current
Thermal Impedance Junction to case
─
5
──
─
mA
3.5 °C/W
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