Semikron SKN 96, SKR 96 Data Sheet
SKN 96, SKR 96
Stud Diode
Rectifier Diode
SKN 96
SKR 96
Features
• Low power dissipation
• Reverse voltages up to 1200 V
• Hermetic metal cases with
glass insulator
• Threaded studs ISO M8 or
1/4" 28 UNF-2A
• SKN: anode to stud
• SKR: cathode to stud
Typical Applications *
• All purpose mean power
rectifier diodes
• Cooling via heatsinks
• Non-controllable and half-
controllable rectifiers
• Free-wheeling diodes
• Recommended snubber
network:
RC: 0,1 µF, 100 Ω (PR = 2W),
Rp: 80 KΩ (PR = 6 W)
Note: for UNF thread versions add
an UNF at the description's end.
(e.g. SKR 96/04 UNF)
SKN SKR
I
V
RSM
V
V
RRM
V
= 150 A (maximum value for continuous operation)
FRMS
I
= 95 A (sin. 180; Tc = 142 ºC)
FAV
200 200 SKN 96/02 SKR 96/02
400 400 SKN 96/04 SKR 96/04
800 600 SKN 96/08 SKR 96/08
1200 1200 SKN 96/12 SKR 96/12
Symbol Condition Values Units
I
FAV
I
T
FSM
T
T
i2t T
T
T
sin. 180 ; TC = 142 ºC 95 A
; TC = 150 ºC 80 A
= 25º C ; 10 ms 2000 A
vj
= 180º C ; 10 ms 1700 A
vj
= 180º C ; 10 ms; VR = V
vj
= 25º C ; 8,3...10 ms 20000 A2s
vj
= 180º C ; 8,3...10 ms 14400 A2s
vj
= 180º C ; 8,3...10 ms; VR = V
vj
1450 A
RRM
10500 A2s
RRM
VF Tvj = 25º C, IF = 300 A Max. 1,2 V
V
T
(TO)
rT T
IR T
T
Qrr Tvj = 160°C, -diF/dt = 10 A/µs typ. 80 µC
R
thjc
R
thch
= 180º C 0,8 V
vj
= 180º C 1,4
vj
= 25º C ; VR = V
vj
= 180º C ; VR = V
vj
RRM
10 mA
RRM
0,6 mA
DC to rect. 120 0,35
rect. 60 0,40
rect. 30 0,50
0,2
Tvj -40...+180 °C
T
-55...+180 °C
stg
M M8 SI / US units 4 Nm / 35 lb.in
1/4" 28 UNF-2A SI / US units 2,5 Nm / 22 lb.in
a 5 * 9,81 m/s
m approx. 20 g
Case E10
mΩ
º C/
º C/
º C/
º C/
W
W
W
W
2
1 2010-08-25 CLG © by SEMIKRON
SKN 96, SKR 96
Fig. 1L Power dissipation vs. forward current
Fig. 2 Forward current vs. case temperature
Fig. 5 Forward characteristics
Fig. 1R Power dissipation vs. ambient temperature
Fig. 4 Transient thermal impedance vs. time
2 2010-08-25 CLG © by SEMIKRON
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