V
V
RSM
RRM
I
(sin. 180; T
FAV
= 85 °C)
case
V 500 A 720 A 1110 A
400 – SKN 501/04 SKN 870/04
800 – SKN 501/08 –
1200 – SKN 501/12 SKN 870/12
1400 – SKN 501/14 –
1600 – SKN 501/16 SKN 870/16
1800 SKN 450/18 SKN 501/18 –
2000 SKN 450/20 – –
2200 SKN 450/22 – –
2400 – – SKN 870/24
Symbol Conditions SKN 450 SKN 501 SKN 870
Rectifier Diodes
SKN 450
SKN 501
SKN 870
I
FAV
I
FSM
sin. 180; DSC;
(T
= . . .) 450 A (95 °C) 500 A (125 °C) 870 A (105 °C)
case
Tvj = 25 °C;
10 ms 6 000 A 7 000 A 13 000 A
T
vj max.
i2tT
= 25 °C;
vj
8,3 . . . 10 ms 180 000 A
T
vj max.
8,3 . . . 10 ms 125 000 A
Q
I
I
V
V
r
R
R
T
T
rr
RM
R
F
(TO)
T
thjc
thch
vj
stg
Tvj =140 °C;
= 500 A;
I
FM
di
F
–
dt
typ.
Tvj = 25 °C;
V
= V
R
T
;
vj max
V
= V
R
Tvj = 25 °C; 1,8 V 1,65 V 1,85 V
(I
= . . .); max. (1500 A) (1500 A) (3000 A)
F
T
vj max.
T
vj max.
DSC/SSC
(Double-sided
cooling/single 0,02/0,04 °C/W 0,007/
sided cooling) 0,014 °C/W
; 10 ms 5 000 A 6 000 A 10 500 A
2
s 245 000 A2s 850 000 A2s
;
2
s 180 000 A2s 550 000 A2s
700 µC 600 µC 2000 µC
A
= 10
µ
s
2 mA 2 mA 4 mA
RRM
RRM
60 A 30 A 100 A
20 mA 50 mA 40 mA
0,85 V 0,80 V 0,85 V
0,7 mΩ 0,6 mΩ 0,33 mΩ
0,075/0,15 °C/W 0,033/
0,066 °C/W
– 40 ... + 150 °C – 40 ... + 180 °C – 40 ... + 150 °C
– 40 ... + 150 °C – 40 ... + 180 °C – 40 ... + 150 °C
Features
• Reverse voltages up to 3000 V
• Capsule type metal-ceramic
packages with precious metal
pressure contacts
• Contact diameters 19 and
32 mm
Typical Applications
• All-purpose high power rectifier
diodes
• SKN 870: High voltage grades
available for industrial high
power drives and medium
traction applications
• Cooling via heatsinks
(double or single sided)
• Non-controllable and
half-controllable rectifiers
• Free-wheeling diodes
F SI units 4 ... 5 kN 13,5 ... 16,5 kN
US units 900 ... 1100 lbs. 3000 ... 3500 lbs.
w approx. 51 g 230 g
RC P
R
p
= 2 W 1 µF + 20 Ω
R
PR = 20 W 25 kΩ
Case E 18 E 19
© by SEMIKRON B 8 – 29