SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Public transport
•Wind power
Remarks
• Case temperature limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1700 V
614 A
474 A
400 A
1200 A
-20 ... 20 V
VCC= 1000 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1700 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
443 A
327 A
400 A
800 A
2340 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50 Hz, t = 1 min 4000 V
500 A
-40 ... 125 °C
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=400A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 16 mA 5.2 5.8 6.4 V
VGE=0V
V
= 1700 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 1200 V
I
=400A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=1Ω
G off
di/dt
= 10000 A/
on
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.90 2.20 V
2.30 2.60 V
0.8 0.9 V
0.7 0.8 V
2.75 3.25 mΩ
4.00 4.50 mΩ
5mA
mA
36 nF
1.36 nF
1.16 nF
3200 nC
1.9 Ω
280 ns
45 ns
156.5 mJ
760 ns
140 ns
µs
di/dt
=2300A/µs
E
off
off
du/dt = 5600 V/µs
Tj=150°C
180 mJ
R
th(j-c)
per IGBT 0.066 K/W
GB
© by SEMIKRON Rev. 6 – 19.03.2015 1
SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 400 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 400 A
di/dt
= 10100 A/
off
µs
V
=±15V
GE
V
= 1200 V
CC
per diode 0.13 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
2.00 2.40 V
2.15 2.57 V
1.32 1.56 V
1.08 1.22 V
1.7 2.1 mΩ
2.7 3.4 mΩ
615 A
150 µC
130 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
C
T
=125°C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 nH
0.55 mΩ
0.85 mΩ
Nm
w 325 g
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Public transport
•Wind power
Remarks
• Case temperature limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
GB
2 Rev. 6 – 19.03.2015 © by SEMIKRON
SKM400GB17E4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 6 – 19.03.2015 3
SKM400GB17E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
4 Rev. 6 – 19.03.2015 © by SEMIKRON
SKM400GB17E4
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 6 – 19.03.2015 5
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