Semikron SKM400GB17E4 Data Sheet
SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Public transport
•Wind power
Remarks
• Case temperature limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1700 V
614 A
474 A
400 A
1200 A
-20 ... 20 V
VCC= 1000 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1700 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
443 A
327 A
400 A
800 A
2340 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50 Hz, t = 1 min 4000 V
500 A
-40 ... 125 °C
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=400A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 16 mA 5.2 5.8 6.4 V
VGE=0V
V
= 1700 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 1200 V
I
=400A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=1Ω
G off
di/dt
= 10000 A/
on
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.90 2.20 V
2.30 2.60 V
0.8 0.9 V
0.7 0.8 V
2.75 3.25 mΩ
4.00 4.50 mΩ
5mA
mA
36 nF
1.36 nF
1.16 nF
3200 nC
1.9 Ω
280 ns
45 ns
156.5 mJ
760 ns
140 ns
µs
di/dt
=2300A/µs
E
off
off
du/dt = 5600 V/µs
Tj=150°C
180 mJ
R
th(j-c)
per IGBT 0.066 K/W
GB
© by SEMIKRON Rev. 6 – 19.03.2015 1
SKM400GB17E4
SEMITRANS® 3
IGBT4 Modules
SKM400GB17E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation
CAL-Diode
• Insulated copper baseplate using DBC
Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequenzies up to 8kHz
• UL recognized, file no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 400 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 400 A
di/dt
= 10100 A/
off
µs
V
=±15V
GE
V
= 1200 V
CC
per diode 0.13 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
2.00 2.40 V
2.15 2.57 V
1.32 1.56 V
1.08 1.22 V
1.7 2.1 mΩ
2.7 3.4 mΩ
615 A
150 µC
130 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
C
T
=125°C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 nH
0.55 mΩ
0.85 mΩ
Nm
w 325 g
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
• Public transport
•Wind power
Remarks
• Case temperature limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
GB
2 Rev. 6 – 19.03.2015 © by SEMIKRON
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