Semikron SKM300GB12T4 Data Sheet

SKM300GB12T4

SEMITRANS®3

Fast IGBT4 Modules

SKM300GB12T4

Features

• IGBT4 = 4. Generation (Trench)IGBT

• VCEsat with positive temperature
coefficient

• High short circuit capability, self
limiting to 6 x I

• Soft switching 4. Generation CAL
diode (CAL4)

Typical Applications

• AC inverter drives

•UPS

• Electronic welders at fsw up to 20 kHz

Remarks

• Case temperature limited to

Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°

CNOM

Absolute Maximum Ratings
Symbol Conditions Values Unit

IGBT

V
I

C

I

Cnom

I

CRM

V

CES

GES

Tj= 175 °C

I

= 3xI

CRM

Cnom

T

=25°C

c

T

=80°C

c

1200 V

422 A
324 A
300 A
900 A

-20 ... 20 V

VCC= 800 V
V

t

psc

T

j

GE

V

CES

≤ 15 V

≤ 1200 V

= 150 °C

T

j

10 µs

-40 ... 175 °C

Inverse diode

T

I

F

I

Fnom

I

FRM

I

FSM

T

Tj= 175 °C

I

= 3xI

FRM

Fnom

tp= 10 ms, sin 180°, Tj=25°C

j

=25°C

c

T

=80°C

c

353 A
264 A
300 A
900 A

1548 A

-40 ... 175 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50Hz, t = 1 min 4000 V

500 A

-40 ... 125 °C

Characteristics
Symbol Conditions min. typ. max. Unit

IGBT

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q
R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-c)

IC=300A
V

=15V

GE

chiplevel

VGE=15V

VGE=VCE, IC=12mA 5 5.8 6.5 V

VGE=0V
V

= 1200 V

CE

VCE=25V
V

=0V

GE

G

VGE=- 8 V...+ 15 V
Tj=25°C

VCC= 600 V
I

=300A

C

V

=±15V

GE

R

=1.5Ω

G on

R

=1.5Ω

G off

di/dt

= 7500 A/µs

on

di/dt

= 3350 A/µs

off

per IGBT 0.11 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

f=1MHz
f=1MHz
f=1MHz

T

= 150 °C

j

Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C

1.85 2.1 V

2.25 2.45 V

0.8 0.9 V

0.7 0.8 V

3.5 4.0 mΩ

5.2 5.5 mΩ

0.1 0.3 mA
mA

17.6 nF

1.16 nF

0.94 nF

1700 nC

2.5 Ω

200 ns

44 ns
27 mJ

450 ns

90 ns
29 mJ

GB

© by SEMIKRON Rev. 0 – 19.02.2009 1

SKM300GB12T4

SEMITRANS®3

Fast IGBT4 Modules

SKM300GB12T4

Features

• IGBT4 = 4. Generation (Trench)IGBT

• VCEsat with positive temperature
coefficient

• High short circuit capability, self
limiting to 6 x I

• Soft switching 4. Generation CAL
diode (CAL4)

CNOM

Characteristics
Symbol Conditions min. typ. max. Unit

Inverse diode

V

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

rr

th(j-c)

IF=300A

EC

V

=0V

GE

chip

IF=300A
di/dt

= 7300 A/µs

off

V

=±15V

GE

V

= 600 V

CC

per diode 0.17 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

Tj=25°C
T

= 150 °C

j

T

= 150 °C

j

Tj= 150 °C

Tj= 150 °C

2.17 2.49 V

2.11 2.42 V

1.3 1.5 V

0.9 1.1 V

2.9 3.3 mΩ

4.0 4.4 mΩ

345 A

54 µC

23 mJ

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

=25°C

T

terminal-chip

C

T

= 125 °C

C

per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm

to terminals M6

2.5 5 Nm

15 20 nH

0.25 mΩ

0.5 mΩ

Nm

w 325 g

Typical Applications

• AC inverter drives

•UPS

• Electronic welders at fsw up to 20 kHz

Remarks

• Case temperature limited to

Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°

GB

2 Rev. 0 – 19.02.2009 © by SEMIKRON