Semikron SKM25GAH125D Data Sheet
SKM25GAH125D
SEMITRANS® 6
IGBT Modules
SKM25GAH125D
Target Data
Features
•V
• High short circuit capability, self limiting
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
•DC – motor
with positive temperature
CE(sat)
coefficient
to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
I
= 2xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
39 A
27 A
25 A
50 A
-20 ... 20 V
VCC= 600 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=125°C
T
j
10 µs
-55 ... 150 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 150 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
47 A
32 A
40 A
80 A
410 A
-40 ... 150 °C
Freewheeling diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 150 °C
I
= 2xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
47 A
32 A
40 A
80 A
410 A
-40 ... 150 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
100 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 4000 V
GAH
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=25A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 1 mA 4.5 5.5 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 20 V
Tj=25°C
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
3.20 3.70 V
3.60 4.20 V
1.5 1.75 V
1.7 1.95 V
68.00 78.00 m
76.00 90.00 m
0.1 0.3 mA
mA
1.65 nF
0.25 nF
0.11 nF
221 nC
0.00
© by SEMIKRON Rev. 1 – 05.12.2012 1
SKM25GAH125D
SEMITRANS® 6
IGBT Modules
SKM25GAH125D
Target Data
Features
•V
• High short circuit capability, self limiting
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
• Isolated copper baseplate using DBC
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
•DC – motor
with positive temperature
CE(sat)
coefficient
to 6 x Icnom
creepage distances (20 mm)
Technology (Direct Copper Bonding)
Characteristics
Symbol Conditions min. typ. max. Unit
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-c)
VCC= 600 V
I
=25A
C
V
=±15V
GE
R
=16
G on
R
=16
G off
per IGBT 0.56 K/W
=125°C
T
j
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
Tj=125°C
25 ns
19 ns
3.9 mJ
184 ns
8ns
1.6 mJ
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF=40A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=25A
=±15V
V
GE
V
= 600 V
CC
per diode 1 K/W
=25°C
T
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
2.13 2.65 V
1.94 2.46 V
1.1 1.45 V
0.85 1.2 V
25.7 30.0 m
27.1 31.4 m
A
µC
mJ
Freewheeling diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF=40A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=25A
di/dt
=2500A/µs
off
V
=±15V
GE
V
= 600 V
CC
per Diode 1 K/W
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=125°C
j
Tj=125°C
Tj=125°C
2.00 2.5 V
1.8 2.3 V
1.1 1.45 V
1.18 1.2 V
22.5 30.0 m
27.1 31.4 m
50 A
4µC
1.1 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
C
T
=125°C
C
per module 0.05 K/W
to heat sink M6 4 5 Nm
60 nH
m
m
Nm
Nm
w 175 g
GAH
2 Rev. 1 – 05.12.2012 © by SEMIKRON
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