Semikron SKM200GAL12E4 Data Sheet
SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
313 A
241 A
200 A
600 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
229 A
172 A
200 A
600 A
990 A
-40 ... 175 °C
Freewheeling diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
229 A
172 A
200 A
600 A
990 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
500 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 4000 V
Remarks
• Case tem peratur e limited
to T
= 125°C max.
c
• Recommended T
= -40 ... +150°C
op
• Product reliability results valid
for T
= 150°C
j
GAL
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=200A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 7.6 mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
5.00 5.75 m
7.50 8.00 m
2.7 mA
mA
12.3 nF
0.81 nF
0.69 nF
1130 nC
3.8
© by SEMIKRON Rev. 3 – 21.08.2013 1
SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case tem peratur e limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-c)
VCC= 600 V
I
=200A
C
V
=±15V
GE
R
=1
G on
R
=1
G off
di/dt
= 5500 A/µs
on
di/dt
=2300A/µs
off
per IGBT 0.14 K/W
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
204 ns
40 ns
21 mJ
490 ns
107 ns
27 mJ
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=4450A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 0.26 K/W
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
4.5 5.1 m
6.3 6.8 m
174 A
33 µC
13 mJ
Freewheeling diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=4450A/µs
off
V
=±15V
GE
V
= 600 V
CC
per Diode 0.26 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
4.5 5.1 m
6.3 6.8 m
174 A
33.1 µC
13 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
C
T
=125°C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 20 nH
0.25 m
0.5 m
Nm
w 325 g
GAL
2 Rev. 3 – 21.08.2013 © by SEMIKRON
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