SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
313 A
241 A
200 A
600 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
229 A
172 A
200 A
600 A
990 A
-40 ... 175 °C
Freewheeling diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
229 A
172 A
200 A
600 A
990 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
500 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 4000 V
Remarks
• Case tem peratur e limited
to T
= 125°C max.
c
• Recommended T
= -40 ... +150°C
op
• Product reliability results valid
for T
= 150°C
j
GAL
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=200A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 7.6 mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
5.00 5.75 m
7.50 8.00 m
2.7 mA
mA
12.3 nF
0.81 nF
0.69 nF
1130 nC
3.8
© by SEMIKRON Rev. 3 – 21.08.2013 1
SKM200GAL12E4
SEMITRANS® 3
IGBT4 Modules
SKM200GAL12E4
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
•DC/DC – converter
• Brake chopper
• Switched reluctance motor
Remarks
• Case tem peratur e limited
to T
= 125°C max.
c
• Recommended T
• Product reliability results valid
for T
= 150°C
j
= -40 ... +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-c)
VCC= 600 V
I
=200A
C
V
=±15V
GE
R
=1
G on
R
=1
G off
di/dt
= 5500 A/µs
on
di/dt
=2300A/µs
off
per IGBT 0.14 K/W
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
204 ns
40 ns
21 mJ
490 ns
107 ns
27 mJ
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=4450A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 0.26 K/W
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
4.5 5.1 m
6.3 6.8 m
174 A
33 µC
13 mJ
Freewheeling diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=4450A/µs
off
V
=±15V
GE
V
= 600 V
CC
per Diode 0.26 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
4.5 5.1 m
6.3 6.8 m
174 A
33.1 µC
13 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
T
=25°C
terminal-chip
C
T
=125°C
C
per module 0.02 0.038 K/W
to heat sink M6 3 5 Nm
to terminals M6
2.5 5 Nm
15 20 nH
0.25 m
0.5 m
Nm
w 325 g
GAL
2 Rev. 3 – 21.08.2013 © by SEMIKRON
SKM200GAL12E4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 3 – 21.08.2013 3
SKM200GAL12E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge
4 Rev. 3 – 21.08.2013 © by SEMIKRON
SKM200GAL12E4
SEMITRANS 3
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 3 – 21.08.2013 5
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