Semikron SKM150GB125D Data Sheet
Absolute Maximum Ratings
GB
SEMITRANS 3
Ω
case
1)
= 25 °C
Symbol Conditions
V
CES
V
CGR
I
C
I
CM
V
GES
P
tot
Tj, (T
V
isol
humidity
climate
RGE = 20 k
T
case
T
case
per IGBT, T
)
stg
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
= 25/80 °C
= 25/80 °C; tp = 1 ms
Values
1200
1200
150 / 100
300 / 200
–40 ... +150 (125)
Class F
40/125/56
4)
4)
± 20
1040
2500
Inverse Diode
= –I
I
F
IFM = –I
I
FSM
I2t
T
C
CM
= 25/80 °C
case
= 25/80 °C; tp = 1 ms
T
case
t
= 10 ms; sin.; Tj = 150 °C
p
= 10 ms; Tj = 150 °C
t
p
115 / 80
300 / 200
1000
5000
Characteristics
CESTj
= 600 V
= R
Goff
2)
2)
1)
= 125 °C
Ω
= 10
min. typ. max. Units
≥
V
CES
4,5
–
–
–
–
–
51
–
–
–
–
–
3)
–
–
–
–
–
–
–
–
–
2)
2)
–
–
–
–
–
–
–
5,5
0,2
9
–
5,4(4,2)
6,7(5,3)
–
–
11,7
1000
720
–
110
50
360
40
13
3
2,0(1,8)
2,25(2,1)
–
8
35(50)
5(14)
–
–
–
–
6,5
2
–
1
8(6,5)
–
–
700
15,6
1600
1080
20
–
–
–
–
–
–
2,5
–
1,2
11
–
–
0,12
0,25
0,038
Symbol Conditions
V
(BR)CES
V
GE(th)
I
CES
I
GES
V
CEsat
V
CEsat
g
fs
C
CHC
C
ies
C
oes
C
res
L
CE
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Inverse Diode
VF = V
VF = V
V
TO
r
t
I
RRM
Q
rr
Thermal ch aracteristics
R
thjc
R
thjc
R
thch
5)
Not suitable for hard switching using PWM: Use range “SKM ... 123D “or “...124D“
VGE = 0, IC = 2 mA
= VCE, IC = 2 mA
V
GE
= 0 Tj = 25 °C
V
GE
V
= V
CE
= 20 V, VCE = 0
V
GE
= 100 A VGE = 15 V;
I
C
I
= 150 A Tj = 25 (125) °C
C
= 20 V, IC = 100 A
V
CE
per IGBT
V
= 0
GE
= 25 V
V
CE
f = 1 MHz
V
CC
= –15 V / +15 V
V
GE
IC = 100 A, ind. load
R
Gon
Tj = 125 °C
8)
IF = 100 A VGE = 0 V;
EC
= 150 A Tj = 25 (125) °C
I
EC
F
T
= 125 °C
j
Tj = 125 °C
IF = 100 A; Tj = 25 (125) °C
IF = 100 A; Tj = 25 (125) °C
per IGBT
per diode
per module
Units
V
V
A
A
V
W
°C
V
A
A
A
A2s
V
V
mA
mA
µ
A
V
V
S
pF
nF
pF
pF
nH
ns
ns
ns
ns
mWs
mWs
V
V
V
Ω
m
A
µ
C
°C/W
°C/W
°C/W
SEMITRANS® M
Ultra Fast IGBT Modules
SKM 150 GB 125 D
Preliminary Data
Features
•
N channel, homogeneous Silicon
structure (NPT- Non punchthrough IGBT)
•
Ultra fast with heavy metal
doping
•
Low inductance case
•
Almost no tail current
•
High short circuit capability,
4)
self limiting to 6 * I
•
Latch-up free
•
Fast & soft inverse CAL diodes
•
Isolated copper baseplate using
DCB Direct Copper Bonding
Technology
•
Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications
•
Fast switching (not for linear use)
•
High frequency welding
•
Induction heating
•
Resonant inverters (CSI, ZV, ZC)
•
Uninterruptable power supplies
> 20 kHz
1)
T
= 25 °C, unless otherwise
case
specified
2)
IF = – IC, VR = 600 V,
/dt = 1000 A/µs, VGE = 0 V
–di
F
3)
Use V
4)
GEoff
For paralleling use derating of 20 %
because of neg. temp. coefficient of
, contact factory, Subject to
V
CEsat
change
8)
CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
B 6 – 286
→
5)
cnom
= –5... –15 V
8)
© by SEMIKRON 0898 B 6 – 281
SKM 150 GB 125 D
1000
W
800
600
400
200
P
tot
0
0 20 40 60 80 100 120 140 160
T
C
Fig. 1 Rated power dissipation P
40
mWs
30
M151GB12.XLS-1
°
C
= f (TC) Fig. 2 Turn-on /-off energy = f (IC)
tot
M151GB12.XLS-3
= 125 °C
T
j
V
= 600 V
CE
= + 15 V
V
GE
I
= 100 A
E
on
C
40
mWs
30
20
10
E
0
0 50 100 150 200
I
C
1000
A
100
M151GB12.XLS-2
E
on
E
off
A
M151GB12.XLS-4
tp=10µs
100µs
1ms
T
= 125 °C
j
= 600 V
V
CE
= + 15 V
V
GE
R
= 10
G
1 pulse
= 25 °C
T
C
Tj
150 °C
≤
Ω
20
10
E
0
0 1020304050
R
G
E
off
Ω
10
1
I
C
0,1
1 10 100 1000 10000
V
CE
10ms
Not for
linear use!
V
Fig. 3 Turn-on /-off ener gy = f (RG) Fig. 4 Maximum safe operat ing area (SOA) IC = f (VCE)
2,5
2
1,5
1
0,5
puls/IC
0
0 200 400 600 800 1000 1200 1400
V
CE
M151GB12.XLS-5
V
Tj
150 °C
≤
= 15 V
V
GE
R
= 10
Goff
IC = 100 A
Ω
12
10
8
6
4
2
I
CSC/IC
0
0 200 400 600 800 1000 1200 1400
V
CE
Note:
*Allowed numbers of
short circuits: <1000
*Time between short
circuits: >1s
Fig. 5 Turn-off safe operating area (RBSOA) Fig. 6 Safe operating area at short circuit I
M151GB12.XLS-6
V
Tj
150 °C
≤
= ± 15 V
V
GE
tsc
10 µs
≤
L < 25 nH
I
= 100 A
C
Use active
gate clamping
by Zene r diod e
16 V
R
= 6,8
Gmin
= f (VCE)
C
Ω
0898
© by SEMIKRONB 6 – 282
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