Semikron SKM100GB12V Data Sheet
SKM100GB12V
SEMITRANS® 2
SKM100GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
159 A
121 A
100 A
300 A
-20 ... 20 V
VCC= 720 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1200 V
=125°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
c
T
=80°C
c
121 A
91 A
100 A
300 A
550 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
200 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
IC=100A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC= 4 mA 5.5 6 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
VCC= 600 V
I
=100A
C
V
=±15V
GE
R
=1
G on
R
=1
G off
di/dt
= 3230 A/µs
on
di/dt
=1330A/µs
off
du/dt
= 9350 V/
off
µs
per IGBT 0.27 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.75 2.20 V
2.20 2.50 V
0.94 1.04 V
0.88 0.98 V
8.10 11.6 m
13.20 15.20 m
0.1 0.3 mA
mA
6.01 nF
0.59 nF
0.589 nF
1150 nC
7.5
294 ns
38 ns
10.7 mJ
418 ns
62 ns
8.7 mJ
GB
© by SEMIKRON Rev. 5 – 23.03.2011 1
SKM100GB12V
SEMITRANS® 2
SKM100GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-c)
IF= 100 A
EC
V
=0V
GE
chip
IF= 100 A
di/dt
=3050A/µs
off
V
=±15V
GE
V
= 600 V
CC
per diode 0.48 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.20 2.52 V
2.15 2.47 V
1.3 1.5 V
0.9 1.1 V
9.0 10.2 m
12.5 13.7 m
90 A
15 µC
5.7 mJ
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
terminal-chip
T
C
T
=125°C
C
0.65 m
1m
=25°C
per module 0.04 0.05 K/W
to heat sink M6 3 5 Nm
to terminals M5
2.5 5 Nm
30 nH
Nm
w 160 g
Typical Applications*
•AC inverter drives
•UPS
• Electronic welders
Remarks
• Case temperature limited to
T
= 125°C max, recomm.
c
T
= -40 ... +150°C, product
op
rel. results valid for T
= 150°
j
GB
2 Rev. 5 – 23.03.2011 © by SEMIKRON