SKiM609GAL12E4
SKiM® 93
Trench IGBT Modules
SKiM609GAL12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
748 A
608 A
600 A
1800 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
139 A
110 A
600 A
1800 A
900 A
-40 ... 175 °C
Freewheeling diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
1397 A
1107 A
1350 A
4050 A
6480 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
700 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=600A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC=24mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
1.8 2.0 m
2.6 2.8 m
0.1 0.3 mA
mA
35.20 nF
2.32 nF
1.88 nF
3400 nC
1.3
GAL
© by SEMIKRON Rev. 4 – 23.07.2013 1
SKiM609GAL12E4
SKiM® 93
Trench IGBT Modules
SKiM609GAL12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCC= 600 V
I
=600A
C
V
=±15V
GE
R
=4.1
G on
R
=4.1
G off
di/dt
= 5000 A/µs
on
di/dt
=4400A/µs
off
per IGBT 0.068 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
150 ns
121 ns
136 mJ
808 ns
100 ns
83 mJ
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 150 A
EC
V
=0V
GE
chiplevel
IF= 150 A
di/dt
=3300A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.501 K/W
=25°C
T
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.1 2.5 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
4.3 5.6 6.4 m
6.7 7.8 8.5 m
153 A
15 µC
9mJ
Freewheeling diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 600 A
EC
V
=0V
GE
chiplevel
IF= 600 A
di/dt
=5300A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.048 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
1.7 1.9 V
1.4 1.7 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
0.5 0.6 0.7 m
0.7 0.9 0.9 m
510 A
123 µC
39 mJ
Module
L
CE
R
CC'+EE'
terminal-chip
T
=25°C
s
T
=125°C
s
10 15 nH
0.3 m
0.5 m
w 1042 g
Temperature Sensor
R
100
B
100/125
T
Sensor
R
(T)
T[K];
= 100 °C (R
= R
exp[B
100
= 5 k)339
25
(1/T-1/373)];
100/125
4096 K
GAL
2 Rev. 4 – 23.07.2013 © by SEMIKRON
SKiM609GAL12E4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 4 – 23.07.2013 3
SKiM609GAL12E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 4 – 23.07.2013 © by SEMIKRON
SKiM609GAL12E4
SKIM 93
GAL
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 4 – 23.07.2013 5
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