Semikron SKiM609GAL12E4 Data Sheet
SKiM609GAL12E4
SKiM® 93
Trench IGBT Modules
SKiM609GAL12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
748 A
608 A
600 A
1800 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
139 A
110 A
600 A
1800 A
900 A
-40 ... 175 °C
Freewheeling diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3xI
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
1397 A
1107 A
1350 A
4050 A
6480 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C
700 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=600A
V
=15V
GE
chiplevel
VGE=15V
VGE=VCE, IC=24mA 5 5.8 6.5 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
1.8 2.0 m
2.6 2.8 m
0.1 0.3 mA
mA
35.20 nF
2.32 nF
1.88 nF
3400 nC
1.3
GAL
© by SEMIKRON Rev. 4 – 23.07.2013 1
SKiM609GAL12E4
SKiM® 93
Trench IGBT Modules
SKiM609GAL12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCC= 600 V
I
=600A
C
V
=±15V
GE
R
=4.1
G on
R
=4.1
G off
di/dt
= 5000 A/µs
on
di/dt
=4400A/µs
off
per IGBT 0.068 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
150 ns
121 ns
136 mJ
808 ns
100 ns
83 mJ
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 150 A
EC
V
=0V
GE
chiplevel
IF= 150 A
di/dt
=3300A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.501 K/W
=25°C
T
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.1 2.5 V
2.1 2.4 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
4.3 5.6 6.4 m
6.7 7.8 8.5 m
153 A
15 µC
9mJ
Freewheeling diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 600 A
EC
V
=0V
GE
chiplevel
IF= 600 A
di/dt
=5300A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.048 K/W
T
=25°C
j
=150°C
T
j
Tj=25°C
T
=150°C
j
Tj=25°C
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
1.7 1.9 V
1.4 1.7 V
1.1 1.3 1.5 V
0.7 0.9 1.1 V
0.5 0.6 0.7 m
0.7 0.9 0.9 m
510 A
123 µC
39 mJ
Module
L
CE
R
CC'+EE'
terminal-chip
T
=25°C
s
T
=125°C
s
10 15 nH
0.3 m
0.5 m
w 1042 g
Temperature Sensor
R
100
B
100/125
T
Sensor
R
(T)
T[K];
= 100 °C (R
= R
exp[B
100
= 5 k)339
25
(1/T-1/373)];
100/125
4096 K
GAL
2 Rev. 4 – 23.07.2013 © by SEMIKRON
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