SKiM601TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM601TMLI12E4B
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
• Recommended T
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 ...+150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT1
V
I
C
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
529 A
425 A
t.b.d. A
t.b.d. A
600 A
1800 A
-20 ... 20 V
10 µs
-40 ... 175 °C
IGBT2
V
I
C
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
VCC= 360 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 650 V
CES
650 V
433 A
340 A
t.b.d. A
t.b.d. A
600 A
1800 A
-20 ... 20 V
10 µs
-40 ... 175 °C
Diode1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
495 A
389 A
t.b.d. A
t.b.d. A
600 A
I
FRM
= 3 x I
Fnom
1800 A
10 ms, sin 180°, Tj= 25 °C 3240 A
-40 ... 175 °C
Diode2
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
T
=25°C
s
=70°C
T
s
T
=25°C
s
T
=70°C
s
650 V
527 A
406 A
t.b.d. A
t.b.d. A
600 A
I
FRM
= 2 x I
Fnom
1200 A
10 ms, sin 180°, Tj= 25 °C 3969 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50 Hz, t = 1 min 2500 V
400 A
-40 ... 125 °C
TMLI
© by SEMIKRON Rev. 5.0 – 01.04.2016 1
SKiM601TMLI12E4B
SKiM® 4
Trench IGBT Modules
SKiM601TMLI12E4B
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
• Recommended T
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 ...+150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
R
th(j-s)
IC=600A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=24mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 15 V...+ 15 V 3750 nC
Tj=25°C
VCE= 300 V
I
=600A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 2584 A/µs
on
di/dt
=2673A/µs
off
per IGBT, λ
per IGBT, λ
paste
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
1.80 2.05 V
2.20 2.40 V
0.80 0.90 V
0.70 0.80 V
1.67 1.92 mΩ
2.5 2.7 mΩ
55.86.5V
5mA
37.2 nF
2.32 nF
2.04 nF
1.3 Ω
261 ns
231 ns
11.44 mJ
585 ns
182 ns
44.88 mJ
0.125 K/W
t.b.d. K/W
IGBT2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
IC=600A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=12mA
VGE=0V, VCE= 650 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 15 V...+ 15 V 5002.2 nC
Tj=25°C
VCE= 300 V
I
=600A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 2648 A/µs
on
di/dt
=3097A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.55 1.95 V
1.75 2.15 V
0.90 1.00 V
0.82 0.90 V
1.08 1.58 mΩ
1.55 2.1 mΩ
5.1 5.8 6.4 V
1.4 mA
37.005 nF
2.307 nF
1.098 nF
0.7 Ω
121 ns
232 ns
6.05 mJ
599 ns
156 ns
44 mJ
R
R
th(j-s)
th(j-s)
per IGBT, λ
per IGBT, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
0.19 K/W
t.b.d. K/W
TMLI
2 Rev. 5.0 – 01.04.2016 © by SEMIKRON
SKiM601TMLI12E4B
SKiM® 4
Trench IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Unit
Diode1
V
V
r
F
I
RRM
Q
E
F
F0
rr
rr
= V
EC
IF= 600 A
chiplevel
chiplevel
chiplevel
IF= 600 A
= 300 V
V
R
V
= +15/-15 V
GE
=25°C
T
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
1.40 1.60 mΩ
1.95 2.1 mΩ
251 A
21.9 µC
4.37 mJ
SKiM601TMLI12E4B
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
with positive temperature
CE(sat)
coefficient
• Low inductance case
•Insulated by Al
DCB (Direct Copper
2O3
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x I
C
• Integrated temperature sensor
Remarks*
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
= -40 ...+150°C
op
R
R
th(j-s)
th(j-s)
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
0.15 K/W
t.b.d. K/W
Diode2
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 600 A
chiplevel
chiplevel
chiplevel
IF= 600 A
= 300 V
V
R
V
= +15/-15 V
GE
per Diode, λ
per Diode, λ
paste
paste
=25°C
T
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
1.39 1.75 V
1.38 1.76 V
1.04 1.24 V
0.85 0.99 V
0.59 0.86 mΩ
0.88 1.28 mΩ
247 A
25.2 µC
2.64 mJ
0.18 K/W
t.b.d. K/W
Module
L
sCE1
L
CE
R
CC'+EE'
M
s
M
t
T
measured betw.
terminal 4 and 24
=25°C
s
T
=125°C
s
to heat sink (M5) 2 3 Nm
to terminals M6
45Nm
29 nH
40 nH
0.4 mΩ
0.6 mΩ
Nm
w317g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
TMLI
© by SEMIKRON Rev. 5.0 – 01.04.2016 3
SKiM601TMLI12E4B
Fig. 1: Typ. IGBT1 output characteristic, incl. R
Fig. 3: Typ. IGBT1 & Diode2 turn-on /-off energy = f (IC) Fig. 4: Typ. IGBT1 & Diode2 turn-on /-off energy = f(RG)
CC'+ EE'
Fig. 2: IGBT1 rated current vs. Temperature Ic=f(Ts)
Fig. 5: Typ. IGBT1 transfer characteristic Fig. 6: Typ. IGBT1 gate charge characteristic
4 Rev. 5.0 – 01.04.2016 © by SEMIKRON
SKiM601TMLI12E4B
Fig. 7: Typ. IGBT1 switching times vs. I
C
Fig. 8: Typ. IGBT1 switching times vs. gate resistor R
Fig. 9: Transient thermal impedance of IGBT1 & Diode2 Fig. 10: Typ. Diode2 forward characteristic, incl. R
G
CC'+ EE'
Fig. 13: Typ. IGBT2 output characteristic, incl. R
CC'+ EE'
Fig. 14: IGBT2 Rated current vs. Temperature Ic= f (Ts)
© by SEMIKRON Rev. 5.0 – 01.04.2016 5
SKiM601TMLI12E4B
Fig. 15: Typ. IGBT2 & Diode1 turn-on /-off energy = f (IC) Fig. 16: Typ. IGBT2 & Diode1 turn-on / -off energy = f(RG)
Fig. 17: Typ. IGBT2 transfer characteristic Fig. 18: Typ. IGBT2 gate charge characteristic
Fig. 19: Typ. IGBT2 switching times vs. I
6 Rev. 5.0 – 01.04.2016 © by SEMIKRON
C
Fig. 20: Typ. IGBT2 switching times vs. gate resistor R
G
SKiM601TMLI12E4B
Fig. 21: Transient thermal impedance of IGBT2 & Diode1 Fig. 22: Typ. Diode1 forward characteristic, incl. R
CC'+ EE'
© by SEMIKRON Rev. 5.0 – 01.04.2016 7
SKiM601TMLI12E4B
SKiM 4
TMLI
8 Rev. 5.0 – 01.04.2016 © by SEMIKRON
SKiM601TMLI12E4B
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
© by SEMIKRON Rev. 5.0 – 01.04.2016 9
Loading...