Semikron SKiM601TMLI12E4B Data Sheet

SKiM601TMLI12E4B

SKiM® 4

Trench IGBT Modules

SKiM601TMLI12E4B

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

•Insulated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

Remarks*

• Case temperature limited to Ts = 125°C

• Recommended T

• IGBT1: outer IGBTs T1 & T4

• IGBT2: inner IGBTs T2 & T3

• Diode1: outer diodes D1 & D4

• Diode2: inner diodes D2 & D3

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

max; T

= Ts (for baseplateless

c

modules)

= -40 ...+150°C

op

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT1

V

I

C

I

C

I

Cnom

I

CRM

V

t

psc

T

CES

GES

j

Tj=25°C

T

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

I

= 3 x I

CRM

Cnom

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

VCC= 800 V, VGE ≤ 15 V, Tj=150°C, V

≤ 1200 V

CES

1200 V

529 A

425 A

t.b.d. A

600 A

1800 A

-20 ... 20 V

10 µs

-40 ... 175 °C

IGBT2

V

I

C

I

C

I

Cnom

I

CRM

V

t

psc

T

CES

GES

j

Tj=25°C

T

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

I

= 3 x I

CRM

Cnom

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

VCC= 360 V, VGE ≤ 15 V, Tj=150°C, V

≤ 650 V

CES

650 V

433 A

340 A

t.b.d. A

600 A

1800 A

-20 ... 20 V

10 µs

-40 ... 175 °C

Diode1

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

RRM

j

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

1200 V

495 A

389 A

t.b.d. A

600 A

I

FRM

= 3 x I

Fnom

1800 A

10 ms, sin 180°, Tj= 25 °C 3240 A

-40 ... 175 °C

Diode2

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

RRM

j

Tj=25°C

λ

=0.8 W/(mK)

paste

T

= 175 °C

j

λ

=2.5 W/(mK)

paste

T

= 175 °C

j

T

=25°C

s

=70°C

T

s

T

=25°C

s

T

=70°C

s

650 V

527 A

406 A

t.b.d. A

600 A

I

FRM

= 2 x I

Fnom

1200 A

10 ms, sin 180°, Tj= 25 °C 3969 A

-40 ... 175 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50 Hz, t = 1 min 2500 V

400 A

-40 ... 125 °C

TMLI

SKiM601TMLI12E4B

SKiM® 4

Trench IGBT Modules

SKiM601TMLI12E4B

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

•Insulated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

Remarks*

• Case temperature limited to Ts = 125°C

• Recommended T

• IGBT1: outer IGBTs T1 & T4

• IGBT2: inner IGBTs T2 & T3

• Diode1: outer diodes D1 & D4

• Diode2: inner diodes D2 & D3

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

max; T

= Ts (for baseplateless

c

modules)

= -40 ...+150°C

op

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT1

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-s)

R

th(j-s)

IC=600A V

=15V

GE

chiplevel

VGE=15V chiplevel

VGE=VCE, IC=24mA

VGE=0V, VCE= 1200 V, Tj=25°C

VCE=25V V

=0V

GE

G

- 15 V...+ 15 V 3750 nC

Tj=25°C VCE= 300 V

I

=600A

C

V

= +15/-15 V

GE

R

=2Ω

G on

R

=2Ω

G off

di/dt

= 2584 A/µs

on

di/dt

=2673A/µs

off

per IGBT, λ

paste

T

=25°C

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

f=1MHz

T

=150°C

j

Tj=150°C

=0.8 W/(mK)

=2.5 W/(mK)

1.80 2.05 V

2.20 2.40 V

0.80 0.90 V

0.70 0.80 V

1.67 1.92 mΩ

2.5 2.7 mΩ

55.86.5V

5mA

37.2 nF

2.32 nF

2.04 nF

1.3 Ω

261 ns

231 ns

11.44 mJ

585 ns

182 ns

44.88 mJ

0.125 K/W

t.b.d. K/W

IGBT2

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

IC=600A V

=15V

GE

chiplevel

VGE=15V chiplevel

VGE=VCE, IC=12mA

VGE=0V, VCE= 650 V, Tj=25°C

VCE=25V V

=0V

GE

G

- 15 V...+ 15 V 5002.2 nC

Tj=25°C VCE= 300 V

I

=600A

C

V

= +15/-15 V

GE

R

=2Ω

G on

R

=2Ω

G off

di/dt

= 2648 A/µs

on

di/dt

=3097A/µs

off

T

=25°C

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

f=1MHz

T

=150°C

j

Tj=150°C

1.55 1.95 V

1.75 2.15 V

0.90 1.00 V

0.82 0.90 V

1.08 1.58 mΩ

1.55 2.1 mΩ

5.1 5.8 6.4 V

1.4 mA

37.005 nF

2.307 nF

1.098 nF

0.7 Ω

121 ns

232 ns

6.05 mJ

599 ns

156 ns

44 mJ

R

th(j-s)

per IGBT, λ

=0.8 W/(mK)

paste

=2.5 W/(mK)

paste

0.19 K/W

t.b.d. K/W

TMLI

SKiM601TMLI12E4B

SKiM® 4

Trench IGBT Modules

Characteristics

Symbol Conditions min. typ. max. Unit

Diode1

V

r

F

I

RRM

Q

E

F

F0

rr

= V

EC

IF= 600 A

chiplevel

IF= 600 A

= 300 V

V

R

V

= +15/-15 V

GE

=25°C

T

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

2.14 2.46 V

2.07 2.38 V

1.30 1.50 V

0.90 1.10 V

1.40 1.60 mΩ

1.95 2.1 mΩ

251 A

21.9 µC

4.37 mJ

SKiM601TMLI12E4B

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

with positive temperature

CE(sat)

coefficient

• Low inductance case

•Insulated by Al

DCB (Direct Copper

2O3

Bonded) ceramic substrate

• Pressure contact technology for thermal contacts

• Spring contact system to attach driver PCB to the control terminals

• High short circuit capability, self limiting to 6 x I

C

• Integrated temperature sensor

Remarks*

• Case temperature limited to Ts = 125°C max; T

= Ts (for baseplateless

c

modules)

• Recommended T

• IGBT1: outer IGBTs T1 & T4

• IGBT2: inner IGBTs T2 & T3

• Diode1: outer diodes D1 & D4

• Diode2: inner diodes D2 & D3

= -40 ...+150°C

op

R

th(j-s)

per Diode, λ

=0.8 W/(mK)

paste

=2.5 W/(mK)

paste

0.15 K/W

t.b.d. K/W

Diode2

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

th(j-s)

EC

IF= 600 A

chiplevel

IF= 600 A

= 300 V

V

R

V

= +15/-15 V

GE

per Diode, λ

paste

=25°C

T

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

=0.8 W/(mK)

=2.5 W/(mK)

1.39 1.75 V

1.38 1.76 V

1.04 1.24 V

0.85 0.99 V

0.59 0.86 mΩ

0.88 1.28 mΩ

247 A

25.2 µC

2.64 mJ

0.18 K/W

t.b.d. K/W

Module

L

sCE1

L

CE

R

CC'+EE'

M

s

M

t

T

measured betw. terminal 4 and 24

=25°C

s

T

=125°C

s

to heat sink (M5) 2 3 Nm

to terminals M6

45Nm

29 nH

40 nH

0.4 mΩ

0.6 mΩ

Nm

w317g

Temperature Sensor

R

100

B

100/125

Tc=100°C (R25=5 kΩ) 493 ± 5% Ω

R

(T)=R100

exp[B

100/125

(1/T-1/T

100

)]; T[K];

3550

±2%

K

TMLI

Semikron SKiM601TMLI12E4B Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual