SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
556 A
452 A
716 A
585 A
450 A
1350 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
10 ms, sin 180°, Tj= 150 °C 2430 A
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
438 A
347 A
530 A
422 A
450 A
1350 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C,
700 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=450A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=18mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
VGE=- 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=450A
C
R
=1.3Ω
G on
R
=1.3Ω
G off
di/dt
= 8340 A/µs
on
di/dt
=3660A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
2.3 2.7 mΩ
3.4 3.7 mΩ
55.86.5V
0.1 0.3 mA
26.4 nF
1.74 nF
1.41 nF
2550 nC
1.7 Ω
276 ns
55 ns
22 mJ
538 ns
114 ns
= +15/-15 V
GD
E
R
R
off
th(j-s)
th(j-s)
V
GE
per IGBT, λ
per IGBT, λ
paste
paste
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
57 mJ
0.092 K/W
0.059 K/W
© by SEMIKRON Rev. 8.0 – 12.05.2016 1
SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 450 A
chiplevel
chiplevel
chiplevel
IF= 450 A
di/dt
=8880A/µs
off
V
= +15/-15 V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
paste
paste
=25°C
T
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
1.87 2.1 mΩ
2.6 2.8 mΩ
570 A
80 µC
40 mJ
0.155 K/W
0.115 K/W
Module
L
CE
R
CC'+EE'
measured per
switch
T
=25°C
s
T
=125°C
s
10 15 nH
0.3 mΩ
0.5 mΩ
w 1042 g
Temperature Sensor
R
100
B
100/125
T
Sensor
R
(T)
T[K];
= 100 °C (R
= R
exp[B
100
= 5 kΩ)339Ω
25
(1/T-1/373)];
100/125
4096 K
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
GD
2 Rev. 8.0 – 12.05.2016 © by SEMIKRON
SKiM459GD12E4
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 8.0 – 12.05.2016 3
SKiM459GD12E4
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 8.0 – 12.05.2016 © by SEMIKRON
SKiM459GD12E4
GD
© by SEMIKRON Rev. 8.0 – 12.05.2016 5
SKiM459GD12E4
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6 Rev. 8.0 – 12.05.2016 © by SEMIKRON
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