Semikron SKiM459GD12E4 Data Sheet
SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
556 A
452 A
716 A
585 A
450 A
1350 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
10 ms, sin 180°, Tj= 150 °C 2430 A
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
438 A
347 A
530 A
422 A
450 A
1350 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C,
700 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=450A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=18mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
VGE=- 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=450A
C
R
=1.3Ω
G on
R
=1.3Ω
G off
di/dt
= 8340 A/µs
on
di/dt
=3660A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
2.3 2.7 mΩ
3.4 3.7 mΩ
55.86.5V
0.1 0.3 mA
26.4 nF
1.74 nF
1.41 nF
2550 nC
1.7 Ω
276 ns
55 ns
22 mJ
538 ns
114 ns
= +15/-15 V
GD
E
R
R
off
th(j-s)
th(j-s)
V
GE
per IGBT, λ
per IGBT, λ
paste
paste
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
57 mJ
0.092 K/W
0.059 K/W
© by SEMIKRON Rev. 8.0 – 12.05.2016 1
SKiM459GD12E4
SKiM® 93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
• Low inductance case
•Insulated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 450 A
chiplevel
chiplevel
chiplevel
IF= 450 A
di/dt
=8880A/µs
off
V
= +15/-15 V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
paste
paste
=25°C
T
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
1.87 2.1 mΩ
2.6 2.8 mΩ
570 A
80 µC
40 mJ
0.155 K/W
0.115 K/W
Module
L
CE
R
CC'+EE'
measured per
switch
T
=25°C
s
T
=125°C
s
10 15 nH
0.3 mΩ
0.5 mΩ
w 1042 g
Temperature Sensor
R
100
B
100/125
T
Sensor
R
(T)
T[K];
= 100 °C (R
= R
exp[B
100
= 5 kΩ)339Ω
25
(1/T-1/373)];
100/125
4096 K
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
GD
2 Rev. 8.0 – 12.05.2016 © by SEMIKRON
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