Semikron SKiM301TMLI12E4C Data Sheet
SKiM301TMLI12E4C
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4C
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 1
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
263 A
200 A
294 A
237 A
300 A
900 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 2
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
263 A
200 A
294 A
237 A
300 A
900 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Module
T
I
t(RMS)
T
stg
V
isol
terminal
=80°C,
400 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
TMLI
© by SEMIKRON Rev. 0 – 27.09.2013 1
SKiM301TMLI12E4C
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4C
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
274 A
217 A
274 A
217 A
300 A
I
FRM
= 3 x I
Fnom
900 A
10 ms, sin 180°, Tj= 150 °C 1485 A
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 2
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
Tj= 175 °C
I
= 3xI
FRM
10 ms
sin 180°
Fnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
T
=25°C
j
T
=150°C
j
1200 V
274 A
217 A
274 A
217 A
300 A
900 A
1485 A
1485 A
-40 ... 175 °C
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
max; T
= Ts (for baseplateless
c
modules)
• Recommended T
= -40 … +150°C
op
TMLI
2 Rev. 0 – 27.09.2013 © by SEMIKRON
SKiM301TMLI12E4C
SKiM® 4
Trench IGBT Modules
SKiM301TMLI12E4C
Features
• IGBT 4 Trench Gate Technology
•Solder technology
•V
• Low inductance case
• Isolated by Al
• Pressure contact technology for
• Spring contact system to attach driver
• High short circuit capability, self limiting
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Remarks
• Case temperature limited to Ts = 125°C
• Recommended T
with positive temperature
CE(sat)
coefficient
DCB (Direct Copper
2O3
Bonded) ceramic substrate
thermal contacts
PCB to the control terminals
to 6 x I
C
max; T
= Ts (for baseplateless
c
modules)
= -40 … +150°C
op
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC= 11.4 mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 1695 nC
Tj=25°C
VCE=3V
I
=300A
C
R
=2.7
G on
R
=2.7
G off
di/dt
= 5626 A/µs
on
di/dt
=2636A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT 0.21 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.80 2.05 V
2.20 2.40 V
0.8 0.9 V
0.7 0.8 V
3.3 3.8 m
5.0 5.3 m
55.86.5V
mA
mA
18.45 nF
1.215 nF
1.035 nF
2.50
217.9 ns
69.43 ns
6.619 mJ
355.5 ns
91.3 ns
19.376 mJ
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC= 11.4 mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 1695 nC
Tj=25°C
VCE= 300 V
I
=300A
C
R
=2.7
G on
R
=2.7
G off
di/dt
= 5626 A/µs
on
di/dt
=2336A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT 0.21 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
T
=25°C
j
=150°C
T
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.8 2.05 V
2.2 2.4 V
0.8 0.9 V
0.7 0.8 V
3.3 3.8 m
5.0 5.3 m
55.86.5V
mA
mA
18.45 nF
1.215 nF
1.035 nF
2.50
217.9 ns
69.43 ns
6.619 mJ
355.5 ns
91.3 ns
19.376 mJ
TMLI
© by SEMIKRON Rev. 0 – 27.09.2013 3
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