Semikron SKiM301TMLI12E4C Data Sheet

SKiM301TMLI12E4C

SKiM® 4

Trench IGBT Modules

SKiM301TMLI12E4C

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Remarks

• Case temperature limited to Ts = 125°C

• Recommended T

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

max; T

= Ts (for baseplateless

c

modules)

= -40 … +150°C

op

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT 1

V

I

C

I

C

I

Cnom

I

CRM

V

CES

GES

Tj=25°C

Tj= 150 °C

Tj= 175 °C

I

= 3 x I

CRM

Cnom

T

=25°C

s

T

=70°C

s

=25°C

T

s

T

=70°C

s

1200 V

263 A

200 A

294 A

237 A

300 A

900 A

-20 ... 20 V

VCC= 800 V V

t

psc

T

j

GE

V

CES

≤ 15 V

≤ 1200 V

=150°C

T

j

10 µs

-40 ... 175 °C

Absolute Maximum Ratings

Symbol Conditions Values Unit

IGBT 2

V

I

C

I

C

I

Cnom

I

CRM

V

CES

GES

Tj=25°C

Tj= 150 °C

Tj= 175 °C

I

= 3 x I

CRM

Cnom

T

=25°C

s

T

=70°C

s

=25°C

T

s

T

=70°C

s

1200 V

263 A

200 A

294 A

237 A

300 A

900 A

-20 ... 20 V

VCC= 800 V V

t

psc

T

j

GE

V

CES

≤ 15 V

≤ 1200 V

=150°C

T

j

10 µs

-40 ... 175 °C

Absolute Maximum Ratings

Symbol Conditions Values Unit

Module

T

I

t(RMS)

T

stg

V

isol

terminal

=80°C,

400 A

-40 ... 125 °C

AC sinus 50 Hz, t = 1 min 2500 V

TMLI

SKiM301TMLI12E4C

SKiM® 4

Trench IGBT Modules

SKiM301TMLI12E4C

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

Absolute Maximum Ratings

Symbol Conditions Values Unit

Diode 1

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

RRM

j

Tj=25°C

Tj= 175 °C

T

=25°C

s

T

=70°C

s

=25°C

T

s

T

=70°C

s

1200 V

274 A

217 A

274 A

217 A

300 A

I

FRM

= 3 x I

Fnom

900 A

10 ms, sin 180°, Tj= 150 °C 1485 A

-40 ... 175 °C

Absolute Maximum Ratings

Symbol Conditions Values Unit

Diode 2

V

I

F

I

F

I

Fnom

I

FRM

I

FSM

T

RRM

j

Tj=25°C

Tj= 175 °C

I

= 3xI

FRM

10 ms sin 180°

Fnom

T

=25°C

s

T

=70°C

s

T

=25°C

s

T

=70°C

s

T

=25°C

j

T

=150°C

j

1200 V

274 A

217 A

274 A

217 A

300 A

900 A

1485 A

-40 ... 175 °C

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Remarks

• Case temperature limited to Ts = 125°C max; T

= Ts (for baseplateless

c

modules)

• Recommended T

= -40 … +150°C

op

TMLI

2 Rev. 0 – 27.09.2013 © by SEMIKRON

SKiM301TMLI12E4C

SKiM® 4

Trench IGBT Modules

SKiM301TMLI12E4C

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Remarks

• Case temperature limited to Ts = 125°C

• Recommended T

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

max; T

= Ts (for baseplateless

c

modules)

= -40 … +150°C

op

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT 1

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-s)

IC=300A V

=15V

GE

chiplevel

VGE=15V chiplevel

VGE=VCEV, IC= 11.4 mA

VGE=0V V

= 1200 V

CE

VCE=25V V

=0V

GE

G

- 8 V...+ 15 V 1695 nC

Tj=25°C VCE=3V

I

=300A

C

R

=2.7

G on

R

=2.7

G off

di/dt

= 5626 A/µs

on

di/dt

=2636A/µs

off

V

=-15V

GE neg

V

=15V

GE pos

per IGBT 0.21 K/W

T

=25°C

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

f=1MHz

=150°C

T

j

Tj=150°C

1.80 2.05 V

2.20 2.40 V

0.8 0.9 V

0.7 0.8 V

3.3 3.8 m

5.0 5.3 m

55.86.5V

mA

18.45 nF

1.215 nF

1.035 nF

2.50 

217.9 ns

69.43 ns

6.619 mJ

355.5 ns

91.3 ns

19.376 mJ

Characteristics

Symbol Conditions min. typ. max. Unit

IGBT 2

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q

R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-s)

IC=300A V

=15V

GE

chiplevel

VGE=15V chiplevel

VGE=VCEV, IC= 11.4 mA

VGE=0V V

= 1200 V

CE

VCE=25V V

=0V

GE

G

- 8 V...+ 15 V 1695 nC

Tj=25°C VCE= 300 V

I

=300A

C

R

=2.7

G on

R

=2.7

G off

di/dt

= 5626 A/µs

on

di/dt

=2336A/µs

off

V

=-15V

GE neg

V

=15V

GE pos

per IGBT 0.21 K/W

T

=25°C

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

=150°C

T

j

T

=25°C

j

=150°C

T

j

f=1MHz

=150°C

T

j

Tj=150°C

1.8 2.05 V

2.2 2.4 V

0.8 0.9 V

0.7 0.8 V

3.3 3.8 m

5.0 5.3 m

55.86.5V

mA

18.45 nF

1.215 nF

1.035 nF

2.50 

217.9 ns

69.43 ns

6.619 mJ

355.5 ns

91.3 ns

19.376 mJ

TMLI

SKiM301TMLI12E4C

SKiM® 4

Trench IGBT Modules

Characteristics

Symbol Conditions min. typ. max. Unit

Diode 1

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

th(j-s)

IF= 300 A

EC

V

=15V

GE

chiplevel

IF= 300 A

V

= 300 V

R

per DIODE 0.25 K/W

T

=25°C

j

=150°C

T

j

=25°C

T

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

2.20 2.52 V

2.15 2.47 V

1.1 1.3 1.5 V

0.7 0.9 1.1 V

2.7 3.0 3.4 m

3.5 4.2 4.6 m

132.43 A

21.47 µC

1.79 mJ

SKiM301TMLI12E4C

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

with positive temperature

CE(sat)

coefficient

• Low inductance case

• Isolated by Al

DCB (Direct Copper

2O3

Bonded) ceramic substrate

• Pressure contact technology for thermal contacts

• Spring contact system to attach driver PCB to the control terminals

• High short circuit capability, self limiting to 6 x I

C

• Integrated temperature sensor

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Remarks

• Case temperature limited to Ts = 125°C max; T

= Ts (for baseplateless

c

modules)

• Recommended T

= -40 … +150°C

op

Characteristics

Symbol Conditions min. typ. max. Unit

Diode 2

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

th(j-s)

IF= 300 A

EC

V

=15V

GE

chiplevel

IF= 300 A

V

= 300 V

R

per DIODE 0.25 K/W

T

=25°C

j

=150°C

T

j

T

=25°C

j

T

=150°C

j

T

=25°C

j

T

=150°C

j

T

=150°C

j

Tj=150°C

2.2 2.50 V

2.15 2.47 V

1.1 1.3 1.5 V

0.7 0.9 1.1 V

2.7 3.0 3.4 m

3.5 4.2 4.6 m

132.43 A

21.47 µC

1.79 mJ

TMLI

SKiM301TMLI12E4C

SKiM® 4

Trench IGBT Modules

SKiM301TMLI12E4C

Features

• IGBT 4 Trench Gate Technology

•Solder technology

•V

• Low inductance case

• Isolated by Al

• Pressure contact technology for

• Spring contact system to attach driver

• High short circuit capability, self limiting

• Integrated temperature sensor

with positive temperature

CE(sat)

coefficient

DCB (Direct Copper

2O3

Bonded) ceramic substrate

thermal contacts

PCB to the control terminals

to 6 x I

C

Characteristics

Symbol Conditions min. typ. max. Unit

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

T

=25°C

terminal-chip

s

T

=125°C

s

per module K/W

to heat sink (M5) 2 3 Nm

to terminals M6

45Nm

18 nH

1.35 m

1.75 m

Nm

w317g

Typical Applications*

• Automotive inverter

• High reliability AC inverter wind

• High reliability AC inverter drives

Remarks

• Case temperature limited to Ts = 125°C max; T

= Ts (for baseplateless

c

modules)

• Recommended T

= -40 … +150°C

op

TMLI

SKiM301TMLI12E4C

Fig. 1: Typ. output characteristic, inclusive R

CC'+ EE'

Fig. 3: Typ. IGBT 2 output characteristic, inclusive R

EE'

CC'+

Fig. 2: Typ. Diode 1 output characteristics

Fig.4: Typ. Diode 2 output characteristic

Fig. 5: Typ. IGBT 1 turn-on /-off energy = f (IC) Fig. 6: Typ. IGBT 2 turn-on /-off energy = f (IC)

SKiM301TMLI12E4C

Fig. 7: Typ. IGBT 1 turn-on /-off energy = f (RG) Fig. 8: Typ. IGBT 2 turn-on /-off energy = f (RG)

Fig. 9: Typ. IGBT 1 gate charge characteristic Fig. 10: Typ. IGBT 2 gate charge characteristic

Fig. 11: Typ. IGBT 1 switching times vs. gate resistor R

Fig. 12: Typ. IGBT 2 switching times vs. gate resistor R

G

SKiM301TMLI12E4C

Fig. 13: Typ. IGBT 1 switching times vs. I

Fig.15: Typ. DIODEs transient thermal impedence Fig. 16: Typ. IGBTs transient thermal impedence

C

Fig. 14: Typ. IGBT 2 switching times vs. I

C

SKiM301TMLI12E4C

TMLI

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX

* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.

Semikron SKiM301TMLI12E4C Data Sheet

Specifications and Main Features

Frequently Asked Questions

User Manual