Semikron SKIIP39MLI07E3V1 Data Sheet
SKiiP 39MLI07E3V1
MiniSKiiP® 3
3-Level NPC Inverter
SKiiP 39MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC = 125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40…+150°C)
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj= 175 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
650 V
159 A
125 A
200 A
400 A
-20 ... 20 V
VCC= 360 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 650 V
=150°C
T
j
6µs
-40 ... 175 °C
Inverse diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2 x I
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
163 A
125 A
200 A
400 A
1470 A
-40 ... 175 °C
Clamping diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 2xI
FRM
Fnom
10 ms, sin 180°, Tj= 25 °C 1470 A
j
=25°C
s
T
=70°C
s
163 A
125 A
200 A
400 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80°C, 20A per spring
terminal
200 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
IC=200A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=3.2mA
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.45 1.85 V
1.70 2.10 V
0.9 1 V
0.85 0.9 V
2.8 4.3 mΩ
4.3 6 mΩ
55.86.5V
0.1 0.3 mA
mA
12.34 nF
0.77 nF
0.37 nF
1600 nC
2 Ω
MLI
© by SEMIKRON Rev. 0 – 02.04.2014 1
SKiiP 39MLI07E3V1
MiniSKiiP® 3
3-Level NPC Inverter
SKiiP 39MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC = 125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40…+150°C)
op
Characteristics
Symbol Conditions min. typ. max. Unit
T1 / T4
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCE= 300 V
I
=200A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 3150 A/µs
on
di/dt
=2000A/µs
off
per IGBT 0.5 K/W
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
165 ns
69 ns
3.6 mJ
341 ns
83 ns
8.9 mJ
T2 / T3
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
on
off
th(j-s)
VCE= 300 V
I
=200A
C
V
= +15/-15 V
GE
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 3120 A/µs
on
di/dt
=2000A/µs
off
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
152 ns
70 ns
1.8 mJ
324 ns
89 ns
9.5 mJ
0.5 K/W
Inverse diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=2700A/µs
off
V
=-15V
GE
per Diode 0.6 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.4 1.8 V
1.4 1.8 V
11.2V
0.9 1 V
1.8 2.6 mΩ
2.6 3.9 mΩ
157 A
31 µC
8.3 mJ
Clamping diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF= 200 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 200 A
di/dt
=3100A/µs
off
V
=-15V
GE
per Diode 0.6 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.4 1.8 V
1.4 1.8 V
11.2V
0.9 1 V
1.8 2.6 mΩ
2.6 3.9 mΩ
171 A
16 µC
4mJ
Module
M
s
to heat sink 2 2.5 Nm
wweight 82 g
Temperature Sensor
R
25
NTC, Tr = 25 °C
1)
5.0 ± 5% kΩ
MLI
2 Rev. 0 – 02.04.2014 © by SEMIKRON