SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT1
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
167 A
135 A
150 A
450 A
-20 ... 20 V
10 µs
-40 ... 175 °C
IGBT2
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
167 A
135 A
150 A
450 A
-20 ... 20 V
10 µs
-40 ... 175 °C
Diode1
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Diode2
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Diode5
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
160 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
MLI
© by SEMIKRON Rev. 0.1 – 08.09.2015 1
SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=6mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 850 nC
Tj=25°C
VCE= 600 V
I
=150A
C
V
= +15/-15 V
GE
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(K*m)
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
7.0 8.0 mΩ
10 11 mΩ
55.86.5V
0.1 0.3 mA
8.80 nF
0.58 nF
0.47 nF
5.0 Ω
ns
ns
11.1 mJ
ns
ns
16.9 mJ
0.33 K/W
IGBT2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=6mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 850 nC
Tj=25°C
VCE= 600 V
I
=150A
C
V
= +15/-15 V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
7.0 8.0 mΩ
10 11 mΩ
55.86.5V
0.1 0.3 mA
8.80 nF
0.58 nF
0.47 nF
5.0 Ω
ns
ns
5.5 mJ
ns
ns
E
R
off
th(j-s)
per IGBT, λ
paste
Tj=150°C
=0.8 W/(K*m)
17.9 mJ
0.33 K/W
MLI
2 Rev. 0.1 – 08.09.2015 © by SEMIKRON
SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
Characteristics
Symbol Conditions min. typ. max. Unit
Diode1
V
V
r
F
I
RRM
Q
E
F
F0
rr
rr
= V
EC
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
V
= 600 V
R
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
5.6 6.4 mΩ
7.8 8.5 mΩ
A
µC
10.9 mJ
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
R
th(j-s)
Diode2
= V
V
F
V
F0
r
F
I
RRM
Q
rr
1)
E
rr
R
th(j-s)
Diode5
= V
V
F
V
F0
r
F
I
RRM
Q
rr
E
rr
EC
EC
per Diode, λ
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
V
= 600 V
R
per Diode, λ
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
V
= 600 V
R
=0.8 W/(K*m)
paste
=0.8 W/(K*m)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
0.53 K/W
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
5.6 6.4 mΩ
7.8 8.5 mΩ
A
µC
-mJ
0.53 K/W
2.14 2.46 V
2.07 2.38 V
1.30 1.50 V
0.90 1.10 V
5.6 6.4 mΩ
7.8 8.5 mΩ
A
µC
11.8 mJ
R
th(j-s)
per Diode, λ
=0.8 W/(K*m)
paste
0.53 K/W
MLI
© by SEMIKRON Rev. 0.1 – 08.09.2015 3
SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Characteristics
Symbol Conditions min. typ. max. Unit
Module
L
sCE1
L
sCE2
R
CC'+EE'
t.b.d. nH
Ts=25°C
nH
mΩ
mΩ
M
s
M
t
to heat sink 2 2.5 Nm
to heat sink
Nm
Nm
w82g
Temperature Sensor
100/125
1)
(1/T-1/T
100
)]; T[K];
493 Ω
3550
±2%
K
R
100
B
100/125
Tc=100°C (R25=5 kΩ)
R
(T)=R100
exp[B
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
MLI
4 Rev. 0.1 – 08.09.2015 © by SEMIKRON
SKiiP39MLI12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 0.1 – 08.09.2015 5
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