Semikron SKiiP39GA12T4V1 Data Sheet
SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT1
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
167 A
135 A
150 A
450 A
-20 ... 20 V
10 µs
-40 ... 175 °C
IGBT2
V
I
C
I
Cnom
I
CRM
V
t
psc
T
CES
GES
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
s
T
=70°C
s
VCC= 800 V, VGE ≤ 15 V, Tj=150°C,
V
≤ 1200 V
CES
1200 V
167 A
135 A
150 A
450 A
-20 ... 20 V
10 µs
-40 ... 175 °C
Diode1
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Diode2
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Diode5
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
1200 V
134 A
106 A
150 A
I
FRM
= 3 x I
Fnom
450 A
10 ms, sin 180°, Tj=25°C 900 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
160 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
MLI
© by SEMIKRON Rev. 0.1 – 08.09.2015 1
SKiiP39MLI12T4V1
MiniSKiiP® 3
3-Level NPC IGBT-Module
SKiiP39MLI12T4V1
Target Data
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Remarks*
• Max. case temperature limited to TC=
125°C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT1: outer IGBTs T1 & T4
• IGBT2: inner IGBTs T2 & T3
• Diode1: outer diodes D1 & D4
• Diode2: inner diodes D2 & D3
• Diode5: clamping diodes D5 & D6
Footnotes
1)
Please find further technical information
on the SEMIKRON website.
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=6mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 850 nC
Tj=25°C
VCE= 600 V
I
=150A
C
V
= +15/-15 V
GE
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(K*m)
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
7.0 8.0 mΩ
10 11 mΩ
55.86.5V
0.1 0.3 mA
8.80 nF
0.58 nF
0.47 nF
5.0 Ω
ns
ns
11.1 mJ
ns
ns
16.9 mJ
0.33 K/W
IGBT2
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=6mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 850 nC
Tj=25°C
VCE= 600 V
I
=150A
C
V
= +15/-15 V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
7.0 8.0 mΩ
10 11 mΩ
55.86.5V
0.1 0.3 mA
8.80 nF
0.58 nF
0.47 nF
5.0 Ω
ns
ns
5.5 mJ
ns
ns
E
R
off
th(j-s)
per IGBT, λ
paste
Tj=150°C
=0.8 W/(K*m)
17.9 mJ
0.33 K/W
MLI
2 Rev. 0.1 – 08.09.2015 © by SEMIKRON
Loading...