SKiiP38GB12E4V1
MiniSKiiP® 3 Dual
SKiiP38GB12E4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
329 A
266 A
300 A
900 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3 x I
FRM
Fnom
10 ms, sin 180°, Tj= 150 °C 1485 A
j
=25°C
s
T
=70°C
s
267 A
211 A
300 A
900 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
280 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Remarks
Max. case temperature limited to TC=
125°C
Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=300A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=12mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 1700 nC
Tj=25°C
VCC= 600 V
I
=300A
C
R
=2Ω
G on
R
=2Ω
G off
di/dt
= 6995 A/µs
on
di/dt
=3030A/µs
off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
3.5 4 mΩ
5.2 5.5 mΩ
55.86.5V
0.1 0.3 mA
mA
17.60 nF
1.16 nF
0.94 nF
2.5 Ω
180 ns
51 ns
19.1 mJ
455 ns
96 ns
du/dt = 5280 V/µs
V
E
R
off
th(j-s)
= +15/-15 V
GE
L
=25nH
s
per IGBT, λ
paste
Tj=150°C
=0.8 W/K*m
34.6 mJ
0.17 K/W
GB
© by SEMIKRON Rev. 1 – 10.03.2015 1
SKiiP38GB12E4V1
MiniSKiiP® 3 Dual
SKiiP38GB12E4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF= 300 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 300 A
di/dt
=7005A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.2 2.5 V
2.2 2.5 V
1.3 1.5 V
0.9 1.1 V
33.4mΩ
4.2 4.6 mΩ
353 A
49 µC
21.5 mJ
0.26 K/W
Module
L
CE
M
s
to heat sink 2 2.5 Nm
15 nH
w76g
Temperature Sensor
R
B
100
25/85
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R25
*exp[B
*(1/T-1/298)], [T]=K 3420 K
25/85
Remarks
Max. case temperature limited to TC=
125°C
Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
GB
2 Rev. 1 – 10.03.2015 © by SEMIKRON