Semikron SKIIP34NAB12T4V1 Data Sheet
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
52 A
43 A
58 A
48 A
35 A
105 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Chopper - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
52 A
43 A
58 A
48 A
35 A
105 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
44 A
35 A
49 A
40 A
35 A
105 A
170 A
-40 ... 175 °C
Freewheeling - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
44 A
35 A
49 A
40 A
35 A
105 A
170 A
-40 ... 175 °C
NAB
© by SEMIKRON Rev. 4.0 – 11.11.2015 1
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
V
I
F
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 150 °C
j
λ
=2.5 W/(mK)
paste
T
= 150 °C
j
10 ms
sin 180°
10 ms
sin 180°
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
1600 V
52 A
39 A
57 A
43 A
13 A
370 A
270 A
685 A
365 A
-40 ... 150 °C
2
2
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
80 A
-40 ... 125 °C
AC sinus 50 Hz, 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=35A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 200 nC
Tj=25°C
VCC= 600 V
I
=35A
C
R
=18Ω
G on
R
=18Ω
G off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
30 34 mΩ
44 47 mΩ
55.86.5V
0.1 0.3 mA
1.95 nF
0.16 nF
0.12 nF
0 Ω
30 ns
35 ns
4.3 mJ
300 ns
55 ns
s
s
E
R
R
off
th(j-s)
th(j-s)
= +15/-15 V
GE
per IGBT, λ
per IGBT, λ
paste
paste
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
3.3 mJ
0.85 K/W
0.7 K/W
V
NAB
2 Rev. 4.0 – 11.11.2015 © by SEMIKRON
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
R
th(j-s)
IC=35A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V, VCE= 1200 V, Tj=25°C
G
- 8 V...+ 15 V 200 nC
Tj=25°C
VCC= 600 V
I
=35A
C
R
=18Ω
G on
R
=18Ω
G off
V
= +15/-15 V
GE
per IGBT, λ
per IGBT, λ
paste
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
30 34 mΩ
44 47 mΩ
55.86.5V
0.1 0.3 mA
0 Ω
30 ns
35 ns
4.3 mJ
300 ns
55 ns
3.3 mJ
0.85 K/W
0.7 K/W
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF=35A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=35A
di/dt
=1250A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.30 2.62 V
2.29 2.62 V
1.30 1.50 V
0.90 1.10 V
29 32 mΩ
40 43 mΩ
34 A
5.6 µC
2.4 mJ
1.2 K/W
1K/W
Freewheeling - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF=35A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=35A
di/dt
=1250A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.30 2.62 V
2.29 2.62 V
1.30 1.50 V
0.90 1.10 V
29 32 mΩ
40 43 mΩ
34 A
5.6 µC
2.4 mJ
1.2 K/W
1K/W
NAB
© by SEMIKRON Rev. 4.0 – 11.11.2015 3
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