SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
52 A
43 A
58 A
48 A
35 A
105 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Chopper - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
1200 V
52 A
43 A
58 A
48 A
35 A
105 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
44 A
35 A
49 A
40 A
35 A
105 A
170 A
-40 ... 175 °C
Freewheeling - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
FRM
Fnom
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
44 A
35 A
49 A
40 A
35 A
105 A
170 A
-40 ... 175 °C
NAB
© by SEMIKRON Rev. 4.0 – 11.11.2015 1
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Absolute Maximum Ratings
Symbol Conditions Values Unit
Rectifier - Diode
V
I
F
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
λ
=0.8 W/(mK)
paste
T
= 150 °C
j
λ
=2.5 W/(mK)
paste
T
= 150 °C
j
10 ms
sin 180°
10 ms
sin 180°
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
1600 V
52 A
39 A
57 A
43 A
13 A
370 A
270 A
685 A
365 A
-40 ... 150 °C
2
2
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
80 A
-40 ... 125 °C
AC sinus 50 Hz, 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
IC=35A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V, VCE= 1200 V, Tj=25°C
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 200 nC
Tj=25°C
VCC= 600 V
I
=35A
C
R
=18Ω
G on
R
=18Ω
G off
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
30 34 mΩ
44 47 mΩ
55.86.5V
0.1 0.3 mA
1.95 nF
0.16 nF
0.12 nF
0 Ω
30 ns
35 ns
4.3 mJ
300 ns
55 ns
s
s
E
R
R
off
th(j-s)
th(j-s)
= +15/-15 V
GE
per IGBT, λ
per IGBT, λ
paste
paste
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
3.3 mJ
0.85 K/W
0.7 K/W
V
NAB
2 Rev. 4.0 – 11.11.2015 © by SEMIKRON
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
Characteristics
Symbol Conditions min. typ. max. Unit
Chopper - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
R
th(j-s)
IC=35A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V, VCE= 1200 V, Tj=25°C
G
- 8 V...+ 15 V 200 nC
Tj=25°C
VCC= 600 V
I
=35A
C
R
=18Ω
G on
R
=18Ω
G off
V
= +15/-15 V
GE
per IGBT, λ
per IGBT, λ
paste
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
1.85 2.10 V
2.25 2.45 V
0.80 0.90 V
0.70 0.80 V
30 34 mΩ
44 47 mΩ
55.86.5V
0.1 0.3 mA
0 Ω
30 ns
35 ns
4.3 mJ
300 ns
55 ns
3.3 mJ
0.85 K/W
0.7 K/W
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF=35A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=35A
di/dt
=1250A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.30 2.62 V
2.29 2.62 V
1.30 1.50 V
0.90 1.10 V
29 32 mΩ
40 43 mΩ
34 A
5.6 µC
2.4 mJ
1.2 K/W
1K/W
Freewheeling - Diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF=35A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=35A
di/dt
=1250A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.30 2.62 V
2.29 2.62 V
1.30 1.50 V
0.90 1.10 V
29 32 mΩ
40 43 mΩ
34 A
5.6 µC
2.4 mJ
1.2 K/W
1K/W
NAB
© by SEMIKRON Rev. 4.0 – 11.11.2015 3
SKiiP 34NAB12T4V1
MiniSKiiP® 3
SKiiP 34NAB12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Rectifier - Diode
V
V
r
R
R
F
F0
F
th(j-s)
th(j-s)
= V
EC
IF=13A
V
=0V
GE
chiplevel
chiplevel
chiplevel
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=125°C
T
j
=25°C
T
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
1.00 1.21 V
0.90 1.10 V
0.88 0.98 V
0.73 0.83 V
9.2 18 mΩ
13 21 mΩ
1.25 K/W
1.1 K/W
Module
M
s
to heat sink 2 2.5 Nm
w82g
L
CE
nH
Temperature Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Ω
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• MiniSKiiP “Technical Explanations”
and “Mounting Instructions” are part of
the data sheet. Please refer to both
documents for further information.
NAB
4 Rev. 4.0 – 11.11.2015 © by SEMIKRON
SKiiP 34NAB12T4V1
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 4.0 – 11.11.2015 5
SKiiP 34NAB12T4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
6 Rev. 4.0 – 11.11.2015 © by SEMIKRON
SKiiP 34NAB12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
© by SEMIKRON Rev. 4.0 – 11.11.2015 7
SKiiP 34NAB12T4V1
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
8 Rev. 4.0 – 11.11.2015 © by SEMIKRON
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