Semikron SKIIP28MLI07E3V1 Data Sheet
SKiiP 28MLI07E3V1
MiniSKiiP® 2
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results are valid for
T
=150°C
jop
(valid for baseplate-less
C=TS
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
650 V
135 A
107 A
163 A
130 A
150 A
450 A
-20 ... 20 V
VCC= 360 V
V
V
≤ 15 V
GE
CES
≤ 650 V
t
psc
T
j
=150°C
T
j
6µs
-40 ... 175 °C
Inverse diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 2 x I
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
126 A
97 A
151 A
118 A
150 A
300 A
1200 A
-40 ... 175 °C
Clamping diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 2 x I
FRM
Fnom
10 ms, sin 180°, Tj= 25 °C 1200 A
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
126 A
97 A
151 A
118 A
150 A
300 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80°C, 20A per spring
terminal
120 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=2.4mA
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.45 1.90 V
1.70 2.10 V
0.90 1.00 V
0.82 0.90 V
3.7 6.0 mΩ
5.9 8.0 mΩ
5.1 5.8 6.4 V
0.1 0.3 mA
-mA
9.24 nF
0.58 nF
0.27 nF
MLI
© by SEMIKRON Rev. 1.0 – 03.06.2016 1
SKiiP 28MLI07E3V1
MiniSKiiP® 2
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results are valid for
T
=150°C
jop
(valid for baseplate-less
C=TS
MLI
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
Q
G
R
Gint
VGE= - 8 V...+ 15 V
Tj=25°C
1200 nC
2.0 Ω
T1 / T4
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
R
on
off
th(j-s)
th(j-s)
VCE= 300 V
I
=150A
C
V
= +15/-15 V
GE
R
=3Ω
G on
R
=1.6Ω
G off
di/dt
= 2100 A/µs
on
di/dt
=1700A/µs
off
per IGBT, λ
per IGBT, λ
paste
paste
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
108 ns
73 ns
5.5 mJ
268 ns
76 ns
5.6 mJ
0.55 K/W
0.41 K/W
T2 / T3
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
R
on
off
th(j-s)
th(j-s)
VCE= 300 V
I
=150A
C
V
= +15/-15 V
GE
R
=3Ω
G on
R
=1.6Ω
G off
di/dt
= 2520 A/µs
on
di/dt
=1750A/µs
off
per IGBT, λ
per IGBT, λ
paste
paste
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
106 ns
64 ns
2mJ
268 ns
77 ns
5.2 mJ
0.55 K/W
0.41 K/W
Inverse diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
di/dt
=2450A/µs
off
V
=-15V
GE
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.40 1.76 V
1.39 1.77 V
1.04 1.24 V
0.85 0.99 V
2.4 3.5 mΩ
3.6 5.2 mΩ
121 A
20 µC
5.5 mJ
0.75 K/W
0.58 K/W
Clamping diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
di/dt
=2210A/µs
off
V
=-15V
GE
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.40 1.76 V
1.39 1.77 V
1.04 1.24 V
0.85 0.99 V
2.4 3.5 mΩ
3.6 5.2 mΩ
116 A
13.2 µC
2.6 mJ
0.75 K/W
0.58 K/W
Module
M
s
to heat sink 2 2.5 Nm
wweight 55 g
Temperature Sensor
R
25
NTC, Tr = 25 °C
1)
5.0 ± 5% kΩ
2 Rev. 1.0 – 03.06.2016 © by SEMIKRON
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