SKiiP 28MLI07E3V1
MiniSKiiP® 2
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results are valid for
T
=150°C
jop
(valid for baseplate-less
C=TS
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
650 V
135 A
107 A
163 A
130 A
150 A
450 A
-20 ... 20 V
VCC= 360 V
V
V
≤ 15 V
GE
CES
≤ 650 V
t
psc
T
j
=150°C
T
j
6µs
-40 ... 175 °C
Inverse diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 2 x I
FRM
Fnom
tp= 10 ms, sin 180°, Tj=25°C
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
126 A
97 A
151 A
118 A
150 A
300 A
1200 A
-40 ... 175 °C
Clamping diode
T
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
λ
=0.8 W/(mK)
paste
T
= 175 °C
j
λ
=2.5 W/(mK)
paste
T
= 175 °C
j
I
= 2 x I
FRM
Fnom
10 ms, sin 180°, Tj= 25 °C 1200 A
j
=25°C
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
126 A
97 A
151 A
118 A
150 A
300 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80°C, 20A per spring
terminal
120 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
IC=150A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=2.4mA
VGE=0V
V
= 650 V
CE
VCE=25V
V
=0V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.45 1.90 V
1.70 2.10 V
0.90 1.00 V
0.82 0.90 V
3.7 6.0 mΩ
5.9 8.0 mΩ
5.1 5.8 6.4 V
0.1 0.3 mA
-mA
9.24 nF
0.58 nF
0.27 nF
MLI
© by SEMIKRON Rev. 1.0 – 03.06.2016 1
SKiiP 28MLI07E3V1
MiniSKiiP® 2
3-Level NPC IGBT-Module
SKiiP 28MLI07E3V1
Features
•650V Trench IGBTs
• Robust and soft diodes in CAL
technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
• NTC T-Sensor
Typical Applications*
• Uninterruptible power supplies (UPS)
•Solar inverters
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results are valid for
T
=150°C
jop
(valid for baseplate-less
C=TS
MLI
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
Q
G
R
Gint
VGE= - 8 V...+ 15 V
Tj=25°C
1200 nC
2.0 Ω
T1 / T4
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
R
on
off
th(j-s)
th(j-s)
VCE= 300 V
I
=150A
C
V
= +15/-15 V
GE
R
=3Ω
G on
R
=1.6Ω
G off
di/dt
= 2100 A/µs
on
di/dt
=1700A/µs
off
per IGBT, λ
per IGBT, λ
paste
paste
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
108 ns
73 ns
5.5 mJ
268 ns
76 ns
5.6 mJ
0.55 K/W
0.41 K/W
T2 / T3
T
t
d(on)
t
r
E
t
d(off)
t
f
E
R
R
on
off
th(j-s)
th(j-s)
VCE= 300 V
I
=150A
C
V
= +15/-15 V
GE
R
=3Ω
G on
R
=1.6Ω
G off
di/dt
= 2520 A/µs
on
di/dt
=1750A/µs
off
per IGBT, λ
per IGBT, λ
paste
paste
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/(mK)
=2.5 W/(mK)
106 ns
64 ns
2mJ
268 ns
77 ns
5.2 mJ
0.55 K/W
0.41 K/W
Inverse diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
di/dt
=2450A/µs
off
V
=-15V
GE
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.40 1.76 V
1.39 1.77 V
1.04 1.24 V
0.85 0.99 V
2.4 3.5 mΩ
3.6 5.2 mΩ
121 A
20 µC
5.5 mJ
0.75 K/W
0.58 K/W
Clamping diode
V
V
r
F
I
RRM
Q
E
R
R
= V
F
F0
rr
rr
th(j-s)
th(j-s)
EC
IF= 150 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 150 A
di/dt
=2210A/µs
off
V
=-15V
GE
per Diode, λ
per Diode, λ
=0.8 W/(mK)
paste
=2.5 W/(mK)
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.40 1.76 V
1.39 1.77 V
1.04 1.24 V
0.85 0.99 V
2.4 3.5 mΩ
3.6 5.2 mΩ
116 A
13.2 µC
2.6 mJ
0.75 K/W
0.58 K/W
Module
M
s
to heat sink 2 2.5 Nm
wweight 55 g
Temperature Sensor
R
25
NTC, Tr = 25 °C
1)
5.0 ± 5% kΩ
2 Rev. 1.0 – 03.06.2016 © by SEMIKRON
SKiiP 28MLI07E3V1
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 1.0 – 03.06.2016 3
SKiiP 28MLI07E3V1
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 1.0 – 03.06.2016 © by SEMIKRON
SKiiP 28MLI07E3V1
pinout, dimensions
pinout
© by SEMIKRON Rev. 1.0 – 03.06.2016 5
SKiiP 28MLI07E3V1
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6 Rev. 1.0 – 03.06.2016 © by SEMIKRON
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