Semikron SKiiP28ANB18V3 Data Sheet
SKiiP 28ANB18V3
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 1
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1700 V
115 A
88 A
128 A
104 A
100 A
200 A
-20 ... 20 V
VCC= 1200 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1700 V
=150°C
T
j
10 µs
-40 ... 175 °C
SKiiP 28ANB18V3
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 150 °C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1700 V
105 A
76 A
119 A
93 A
150 A
I
FRM
= 2 x I
Fnom
300 A
10 ms, sin 180°, Tj=150°C 860 A
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 4
V
RRM
T
I
F
I
Fnom
I
FSM
2
t 10 ms, sin. 180°, Tj= 150 °C 3900 A2s
I
T
j
Tj= 150 °C
DC current 88 A
10 ms, sin 180°, Tj=150°C 890 A
=25°C
s
T
=70°C
s
1800 V
139 A
98 A
-40 ... 150 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
80 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
ANB
© by SEMIKRON Rev. 1 – 04.11.2014 1
SKiiP 28ANB18V3
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
SKiiP 28ANB18V3
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=100A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=4mA
VGE=0V
V
= 1700 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 934 nC
Tj=25°C
VCC= 900 V
I
=100A
C
R
=1Ω
G on
R
=1Ω
G off
di/dt
= 3000 A/µs
on
di/dt
=600A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/K*m
2.00 2.40 V
2.45 2.90 V
11.2V
0.9 1.1 V
10 12 mΩ
16 18 mΩ
5.2 5.8 6.4 V
0.1 0.3 mA
mA
8.82 nF
0.37 nF
0.29 nF
4.8 Ω
160 ns
35 ns
23 mJ
580 ns
150 ns
32.7 mJ
0.33 K/W
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 1
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF= 100 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 100 A
di/dt
=4000A/µs
off
V
=-15V
GE
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
=25°C
T
j
=150°C
T
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.8 2.1 V
1.8 2.1 V
1.3 1.6 V
1.1 1.2 V
4.4 5.4 mΩ
6.9 8.7 mΩ
226 A
38.5 µC
26.4 mJ
0.58 K/W
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 4
V
V
r
R
F
F0
F
th(j-s)
= V
EC
IF=88A
V
=0V
GE
chiplevel
chiplevel
chiplevel
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
=125°C
T
j
1.1 1.3 V
11.3V
0.6 0.9 1.1 V
0.7 1 V
2.3 2.6 mΩ
33.3mΩ
0.64 K/W
ANB
2 Rev. 1 – 04.11.2014 © by SEMIKRON
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