SKiiP 28ANB18V3
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT 1
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 2 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1700 V
115 A
88 A
128 A
104 A
100 A
200 A
-20 ... 20 V
VCC= 1200 V
V
t
psc
T
j
GE
V
CES
≤ 20 V
≤ 1700 V
=150°C
T
j
10 µs
-40 ... 175 °C
SKiiP 28ANB18V3
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 1
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
Tj= 150 °C
Tj= 175 °C
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1700 V
105 A
76 A
119 A
93 A
150 A
I
FRM
= 2 x I
Fnom
300 A
10 ms, sin 180°, Tj=150°C 860 A
-40 ... 175 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Diode 4
V
RRM
T
I
F
I
Fnom
I
FSM
2
t 10 ms, sin. 180°, Tj= 150 °C 3900 A2s
I
T
j
Tj= 150 °C
DC current 88 A
10 ms, sin 180°, Tj=150°C 890 A
=25°C
s
T
=70°C
s
1800 V
139 A
98 A
-40 ... 150 °C
Absolute Maximum Ratings
Symbol Conditions Values Unit
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
80 A
-40 ... 125 °C
AC sinus 50 Hz, t = 1 min 2500 V
ANB
© by SEMIKRON Rev. 1 – 04.11.2014 1
SKiiP 28ANB18V3
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
SKiiP 28ANB18V3
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT 1
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=100A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=4mA
VGE=0V
V
= 1700 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 934 nC
Tj=25°C
VCC= 900 V
I
=100A
C
R
=1Ω
G on
R
=1Ω
G off
di/dt
= 3000 A/µs
on
di/dt
=600A/µs
off
V
=-15V
GE neg
V
=15V
GE pos
per IGBT, λ
paste
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.8 W/K*m
2.00 2.40 V
2.45 2.90 V
11.2V
0.9 1.1 V
10 12 mΩ
16 18 mΩ
5.2 5.8 6.4 V
0.1 0.3 mA
mA
8.82 nF
0.37 nF
0.29 nF
4.8 Ω
160 ns
35 ns
23 mJ
580 ns
150 ns
32.7 mJ
0.33 K/W
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 1
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF= 100 A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 100 A
di/dt
=4000A/µs
off
V
=-15V
GE
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
=25°C
T
j
=150°C
T
j
=150°C
T
j
Tj=150°C
Tj=150°C
1.8 2.1 V
1.8 2.1 V
1.3 1.6 V
1.1 1.2 V
4.4 5.4 mΩ
6.9 8.7 mΩ
226 A
38.5 µC
26.4 mJ
0.58 K/W
Characteristics
Symbol Conditions min. typ. max. Unit
Diode 4
V
V
r
R
F
F0
F
th(j-s)
= V
EC
IF=88A
V
=0V
GE
chiplevel
chiplevel
chiplevel
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=125°C
T
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
=125°C
T
j
1.1 1.3 V
11.3V
0.6 0.9 1.1 V
0.7 1 V
2.3 2.6 mΩ
33.3mΩ
0.64 K/W
ANB
2 Rev. 1 – 04.11.2014 © by SEMIKRON
SKiiP 28ANB18V3
MiniSKiiP® 2
3-phase bridge rectifier +
brake chopper
SKiiP 28ANB18V3
Features
•Trench IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Temperature Sensor
R
100
R(T)
Tr=100°C (R25=1000Ω)
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Ω
Characteristics
Symbol Conditions min. typ. max. Unit
Module
M
s
wweight 55 g
to heat sink 2 2.5 Nm
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
• IGBT 1: brake chopper IGBT
• Diode 1: brake chopper diode
• Diode 4: rectifier diode
• The distance between terminals of
temperature sensor and –rect is not
sufficient for basic insulation
ANB
© by SEMIKRON Rev. 1 – 04.11.2014 3
SKiiP 28ANB18V3
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
4 Rev. 1 – 04.11.2014 © by SEMIKRON
SKiiP 28ANB18V3
Fig. 7: Transient thermal impedance of IGBT and Diode Fig. 8: CAL diode forward characteristic
Fig. 9: Typ. input bridge forward characteristic
© by SEMIKRON Rev. 1 – 04.11.2014 5
SKiiP 28ANB18V3
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6 Rev. 1 – 04.11.2014 © by SEMIKRON
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