Semikron SKIIP26GH12T4V11 Data Sheet
SKiiP 26GH12T4V11
MiniSKiiP® 2
H-bridge inverter
SKiiP 26GH12T4V11
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Typical Applications*
• Single phase inverter
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40...+150°C)
op
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
1200 V
90 A
73 A
70 A
210 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
T
I
F
I
Fnom
I
FRM
I
FSM
T
Tj= 175 °C
I
= 3 x I
FRM
Fnom
10 ms, sin 180°, Tj=150°C 430 A
j
=25°C
s
T
=70°C
s
83 A
66 A
75 A
225 A
-40 ... 175 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20A per spring
terminal
100 A
-40 ... 125 °C
AC sinus 50Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
IC=70A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC=2mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
- 8 V...+ 15 V 400 nC
Tj=25°C
VCC= 600 V
I
=75A
C
R
=9.1
G on
R
=9.1
G off
di/dt
= 1820 A/µs
on
di/dt
=900A/µs
off
V
= +15/-15 V
GE
per IGBT 0.55 K/W
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
15 17 m
22 24 m
55.86.5V
0.1 0.3 mA
mA
3.90 nF
0.31 nF
0.23 nF
0.00
26 ns
36 ns
9.5 mJ
320 ns
175 ns
7.1 mJ
GH
© by SEMIKRON Rev. 0 – 14.10.2013 1
SKiiP 26GH12T4V11
MiniSKiiP® 2
H-bridge inverter
SKiiP 26GH12T4V11
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
IF=75A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=75A
di/dt
=2120A/µs
off
V
=-15V
GE
V
= 600 V
CC
per Diode 0.75 K/W
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.2 2.5 V
2.1 2.4 V
1.3 1.5 V
0.9 1.1 V
12 13 m
16 18 m
80 A
13.3 µC
5.6 mJ
Module
M
s
to heat sink 2 2.5 Nm
w55g
Temperature Sensor
R
100
R(T)
Tr=100°C (R25=1000)
R(T)=1000[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Typical Applications*
• Single phase inverter
Remarks
• Case temperature limited to TC=125°C
max.; T
modules)
• Product reliability results valid for
T
T
= TS (valid for baseplateless
C
≤150°C (recommended
j
=-40...+150°C)
op
GH
2 Rev. 0 – 14.10.2013 © by SEMIKRON
Loading...