SKiiP 03NAC12T4V1
MiniSKiiP® 0
SKiiP 03NAC12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
•Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
7.5 A
7.5 A
7.5 A
7.5 A
8A
24 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
9A
9A
9A
9A
8A
24 A
36 A
-40 ... 175 °C
Rectifier - Diode
V
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
Ts=25°C, Tj=150°C
tp=10ms
sin 180°
=10ms
t
p
sin 180°
T
T
T
T
=25°C
j
=150°C
j
=25°C
j
=150°C
j
1600 V
39 A
8A
220 A
200 A
242 A
200 A
2
2
-40 ... 150 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
-40 ... 125 °C
AC sinus 50 Hz, 1 min 2500 V
A
s
s
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
NAC
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
IC=8A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
131 150 mΩ
194 206 mΩ
55.86.5V
0.1 0.3 mA
mA
0.49 nF
0.05 nF
0.03 nF
© by SEMIKRON Rev. 4 – 04.11.2014 1
SKiiP 03NAC12T4V1
MiniSKiiP® 0
SKiiP 03NAC12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
•Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
Q
R
t
d(on)
t
r
E
t
d(off)
t
f
E
R
G
Gint
on
off
th(j-s)
- 8 V...+ 15 V 45 nC
Tj=25°C
VCC= 600 V
I
=8A
C
R
=47Ω
G on
R
=47Ω
G off
V
= +15/-15 V
GE
per IGBT, λ
=0.8 W/K*m
paste
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
0 Ω
32 ns
34 ns
0.9 mJ
295 ns
68 ns
0.7 mJ
1.84 K/W
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=8A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=8A
V
=-15V
GE
V
= 600 V
CC
di/dt
=335A/µs
off
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.3 2.7 V
2.4 2.7 V
1.3 1.5 V
0.9 1.1 V
129 144 mΩ
181 198 mΩ
7.7 A
1.23 µC
0.5 mJ
2.53 K/W
Rectifier - Diode
T
V
V
r
R
F
F0
F
th(j-s)
= V
EC
IF=8A
chiplevel
chiplevel
chiplevel
per Diode, λ
paste
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
=0.8 W/K*m
11.2V
0.9 1.1 V
0.9 1 V
0.7 0.8 V
15 29 mΩ
21 34 mΩ
1.5 K/W
Module
M
s
to heat sink 2 2.5 Nm
w20g
Temperature Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Ω
NAC
2 Rev. 4 – 04.11.2014 © by SEMIKRON
SKiiP 03NAC12T4V1
Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 4 – 04.11.2014 3
SKiiP 03NAC12T4V1
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic
4 Rev. 4 – 04.11.2014 © by SEMIKRON
SKiiP 03NAC12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON Rev. 4 – 04.11.2014 5
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