Semikron SKIIP03NAC12T4V1 Data Sheet
SKiiP 03NAC12T4V1
MiniSKiiP® 0
SKiiP 03NAC12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
•Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
Absolute Maximum Ratings
Symbol Conditions Values Unit
Inverter - IGBT
V
I
C
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
CRM
Cnom
T
=25°C
s
T
=70°C
s
=25°C
T
s
T
=70°C
s
1200 V
7.5 A
7.5 A
7.5 A
7.5 A
8A
24 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse - Diode
V
I
F
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 150 °C
Tj= 175 °C
I
= 3 x I
FRM
Fnom
s
T
=70°C
s
T
=25°C
s
T
=70°C
s
tp= 10 ms, sin 180°, Tj=150°C
1200 V
9A
9A
9A
9A
8A
24 A
36 A
-40 ... 175 °C
Rectifier - Diode
V
I
F
I
Fnom
I
FSM
2
I
T
RRM
t
j
Tj=25°C
Ts=25°C, Tj=150°C
tp=10ms
sin 180°
=10ms
t
p
sin 180°
T
T
T
T
=25°C
j
=150°C
j
=25°C
j
=150°C
j
1600 V
39 A
8A
220 A
200 A
242 A
200 A
2
2
-40 ... 150 °C
Module
T
I
t(RMS)
T
stg
V
isol
= 80 °C, 20 A per spring
terminal
-40 ... 125 °C
AC sinus 50 Hz, 1 min 2500 V
A
s
s
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
NAC
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
IC=8A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCEV, IC=1mA
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
f=1MHz
f=1MHz
f=1MHz
1.85 2.10 V
2.25 2.45 V
0.8 0.9 V
0.7 0.8 V
131 150 mΩ
194 206 mΩ
55.86.5V
0.1 0.3 mA
mA
0.49 nF
0.05 nF
0.03 nF
© by SEMIKRON Rev. 4 – 04.11.2014 1
SKiiP 03NAC12T4V1
MiniSKiiP® 0
SKiiP 03NAC12T4V1
Features
•Trench 4 IGBTs
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised: File no. E63532
Remarks
• Max. case temperature limited to
T
=125°C
C
• Product reliability results valid for
T
≤150°C (recommended
j
T
=-40...+150°C)
j,op
•Temperature sensor: No basic
insulation to main circuit, max. potential
difference 850V to -DC
Characteristics
Symbol Conditions min. typ. max. Unit
Inverter - IGBT
Q
R
t
d(on)
t
r
E
t
d(off)
t
f
E
R
G
Gint
on
off
th(j-s)
- 8 V...+ 15 V 45 nC
Tj=25°C
VCC= 600 V
I
=8A
C
R
=47Ω
G on
R
=47Ω
G off
V
= +15/-15 V
GE
per IGBT, λ
=0.8 W/K*m
paste
T
=150°C
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
0 Ω
32 ns
34 ns
0.9 mJ
295 ns
68 ns
0.7 mJ
1.84 K/W
Inverse - Diode
V
V
r
F
I
RRM
Q
E
R
= V
F
F0
rr
rr
th(j-s)
EC
IF=8A
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF=8A
V
=-15V
GE
V
= 600 V
CC
di/dt
=335A/µs
off
per Diode, λ
=0.8 W/K*m
paste
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
2.3 2.7 V
2.4 2.7 V
1.3 1.5 V
0.9 1.1 V
129 144 mΩ
181 198 mΩ
7.7 A
1.23 µC
0.5 mJ
2.53 K/W
Rectifier - Diode
T
V
V
r
R
F
F0
F
th(j-s)
= V
EC
IF=8A
chiplevel
chiplevel
chiplevel
per Diode, λ
paste
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
T
=25°C
j
T
=125°C
j
=0.8 W/K*m
11.2V
0.9 1.1 V
0.9 1 V
0.7 0.8 V
15 29 mΩ
21 34 mΩ
1.5 K/W
Module
M
s
to heat sink 2 2.5 Nm
w20g
Temperature Sensor
R
100
R(T)
Tr=100°C, tolerance=3%
R(T)=1000Ω[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3°C-1,
B = 1.731*10
-5°C-2
2
1670 ±
3%
Ω
NAC
2 Rev. 4 – 04.11.2014 © by SEMIKRON
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