SEMiX603GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
with positive temperature
CE(sat)
coefficient
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
1110 A
853 A
600 A
1800 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3xI
FRM
Fnom
c
T
=80°C
c
tp= 10 ms, sin 180°, Tj=25°C
1200 V
856 A
640 A
600 A
1800 A
3456 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min 4000 V
600 A
-40 ... 125 °C
Typical Applications*
•AC inverter drives
•UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
T
=150°C
j
•V
between temperature sensor and
isol
power section is only 2500V
GB
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(c-s)
R
th(c-s)
IC=600A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 22.2 mA 5.3 5.8 6.3 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=600A
C
V
= +15/-15 V
GE
R
=1.5Ω
G on
R
=1.5Ω
G off
di/dt
= 6400 A/µs
on
di/dt
=4150A/µs
off
du/dt = 3400 V/µs
L
=21nH
s
per IGBT 0.037 K/W
per IGBT (λ
grease
per IGBT, pre-applied phase change
material
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.81 W/(m*K))
1.80 2.05 V
2.03 2.30 V
0.87 1.01 V
0.77 0.90 V
1.55 1.73 mΩ
2.1 2.3 mΩ
5mA
-mA
37.5 nF
2.31 nF
2.04 nF
3450 nC
1.2 Ω
260 ns
85 ns
69 mJ
560 ns
145 ns
80 mJ
0.035 K/W
0.025 K/W
© by SEMIKRON Rev. 1.0 – 01.07.2016 1
SEMiX603GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
•V
with positive temperature
CE(sat)
coefficient
T
=150°C
j
between temperature sensor and
isol
power section is only 2500V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
R
R
= V
F
F0
rr
rr
th(j-c)
th(c-s)
th(c-s)
IF= 600 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 600 A
di/dt
=5100A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.065 K/W
per diode (λ
grease
per diode, pre-applied phase change
material
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=0.81 W/(m*K))
2.08 2.44 V
2.08 2.34 V
1.39 1.59 V
1.08 1.18 V
1.16 1.42 mΩ
1.67 1.93 mΩ
475 A
108 µC
40 mJ
0.039 K/W
0.031 K/W
Module
L
CE
R
CC'+EE'
Rth
(c-s)1
T
measured per
switch
=25°C
C
T
=125°C
C
calculated without thermal coupling 0.009 K/W
20 nH
1.2 mΩ
1.65 mΩ
including thermal coupling,
Rth
(c-s)2
Ts underneath module (λ
grease
=0.81 W/
0.014 K/W
(m*K))
including thermal coupling,
Rth
(c-s)2
Ts underneath module, pre-applied
0.011 K/W
phase change material
M
s
M
t
to heat sink (M5) 3 6 Nm
to terminals (M6)
36Nm
Nm
w 350 g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
GB
2 Rev. 1.0 – 01.07.2016 © by SEMIKRON
SEMiX603GB12E4p
Fig. 1: Typ. output characteristic, inclusive R
Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG)
CC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
© by SEMIKRON Rev. 1.0 – 01.07.2016 3
SEMiX603GB12E4p
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+ EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
4 Rev. 1.0 – 01.07.2016 © by SEMIKRON
SEMiX603GB12E4p
SEMiX 3p
pinout
© by SEMIKRON Rev. 1.0 – 01.07.2016 5
SEMiX603GB12E4p
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.
*IMPORTANT INFORMATION AND WARNINGS
The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics
("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in
typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective
application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their
applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical
injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is
compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written
document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of
the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is
given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation,
warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the
applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual
property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of
intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain
dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document
supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make
changes.
6 Rev. 1.0 – 01.07.2016 © by SEMIKRON
Loading...