Semikron SEMiX603GB12E4p Data Sheet
SEMiX603GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
with positive temperature
CE(sat)
coefficient
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
I
C
I
Cnom
I
CRM
V
CES
GES
Tj=25°C
Tj= 175 °C
I
= 3xI
CRM
Cnom
T
=25°C
c
T
=80°C
c
1200 V
1110 A
853 A
600 A
1800 A
-20 ... 20 V
VCC= 800 V
V
t
psc
T
j
GE
V
CES
≤ 15 V
≤ 1200 V
=150°C
T
j
10 µs
-40 ... 175 °C
Inverse diode
V
I
F
I
Fnom
I
FRM
I
FSM
T
RRM
j
Tj=25°C
T
=25°C
Tj= 175 °C
I
= 3xI
FRM
Fnom
c
T
=80°C
c
tp= 10 ms, sin 180°, Tj=25°C
1200 V
856 A
640 A
600 A
1800 A
3456 A
-40 ... 175 °C
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min 4000 V
600 A
-40 ... 125 °C
Typical Applications*
•AC inverter drives
•UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
T
=150°C
j
•V
between temperature sensor and
isol
power section is only 2500V
GB
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(c-s)
R
th(c-s)
IC=600A
V
=15V
GE
chiplevel
chiplevel
VGE=15V
chiplevel
VGE=VCE, IC= 22.2 mA 5.3 5.8 6.3 V
VGE=0V
V
= 1200 V
CE
VCE=25V
V
=0V
GE
G
VGE= - 8 V...+ 15 V
Tj=25°C
VCC= 600 V
I
=600A
C
V
= +15/-15 V
GE
R
=1.5Ω
G on
R
=1.5Ω
G off
di/dt
= 6400 A/µs
on
di/dt
=4150A/µs
off
du/dt = 3400 V/µs
L
=21nH
s
per IGBT 0.037 K/W
per IGBT (λ
grease
per IGBT, pre-applied phase change
material
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
T
=25°C
j
=150°C
T
j
T
=25°C
j
T
=150°C
j
f=1MHz
f=1MHz
f=1MHz
=150°C
T
j
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
Tj=150°C
=0.81 W/(m*K))
1.80 2.05 V
2.03 2.30 V
0.87 1.01 V
0.77 0.90 V
1.55 1.73 mΩ
2.1 2.3 mΩ
5mA
-mA
37.5 nF
2.31 nF
2.04 nF
3450 nC
1.2 Ω
260 ns
85 ns
69 mJ
560 ns
145 ns
80 mJ
0.035 K/W
0.025 K/W
© by SEMIKRON Rev. 1.0 – 01.07.2016 1
SEMiX603GB12E4p
SEMiX® 3p
Trench IGBT Modules
SEMiX603GB12E4p
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
•V
with positive temperature
CE(sat)
coefficient
T
=150°C
j
between temperature sensor and
isol
power section is only 2500V
Characteristics
Symbol Conditions min. typ. max. Unit
Inverse diode
V
V
r
F
I
RRM
Q
E
R
R
R
= V
F
F0
rr
rr
th(j-c)
th(c-s)
th(c-s)
IF= 600 A
EC
V
=0V
GE
chiplevel
chiplevel
chiplevel
IF= 600 A
di/dt
=5100A/µs
off
V
=-15V
GE
V
= 600 V
CC
per diode 0.065 K/W
per diode (λ
grease
per diode, pre-applied phase change
material
T
=25°C
j
=150°C
T
j
=25°C
T
j
T
=150°C
j
T
=25°C
j
T
=150°C
j
T
=150°C
j
Tj=150°C
Tj=150°C
=0.81 W/(m*K))
2.08 2.44 V
2.08 2.34 V
1.39 1.59 V
1.08 1.18 V
1.16 1.42 mΩ
1.67 1.93 mΩ
475 A
108 µC
40 mJ
0.039 K/W
0.031 K/W
Module
L
CE
R
CC'+EE'
Rth
(c-s)1
T
measured per
switch
=25°C
C
T
=125°C
C
calculated without thermal coupling 0.009 K/W
20 nH
1.2 mΩ
1.65 mΩ
including thermal coupling,
Rth
(c-s)2
Ts underneath module (λ
grease
=0.81 W/
0.014 K/W
(m*K))
including thermal coupling,
Rth
(c-s)2
Ts underneath module, pre-applied
0.011 K/W
phase change material
M
s
M
t
to heat sink (M5) 3 6 Nm
to terminals (M6)
36Nm
Nm
w 350 g
Temperature Sensor
R
100
B
100/125
Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R
(T)=R100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
3550
±2%
K
GB
2 Rev. 1.0 – 01.07.2016 © by SEMIKRON
Loading...