Semikron SEMIX202GB066HDS Data Sheet

SEMiX202GB066HDs

SEMiX® 2s

Trench IGBT Modules

SEMiX202GB066HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• UL recognised file no. E63532

Typical Applications*

with positive temperature

CE(sat)

coefficient

Absolute Maximum Ratings
Symbol Conditions Values Unit

IGBT

V
I

C

I

Cnom

I

CRM

V

CES

GES

Tj= 175 °C

I

= 2xI

CRM

Cnom

T

=25°C

c

T

=80°C

c

600 V
274 A
207 A
200 A
400 A

-20 ... 20 V

VCC= 360 V
V

t

psc

T

j

GE

V

CES

≤ 15 V

≤ 600 V

= 150 °C

T

j

6µs

-40 ... 175 °C

Inverse diode

T

I

F

I

Fnom

I

FRM

I

FSM

T

Tj= 175 °C

I

= 2xI

FRM

Fnom

tp= 10 ms, sin 180°, Tj=25°C

j

=25°C

c

T

=80°C

c

291 A
214 A
200 A
400 A

1000 A

-40 ... 175 °C

Module

I

t(RMS)

T

stg

V

isol

AC sinus 50Hz, t = 1 min 4000 V

600 A

-40 ... 125 °C

• Matrix Converter

• Resonant Inverter

• Current Source Inverter

Remarks

• Case temperature limited to TC=125°C
max.

• Product reliability results are valid for
T

=150°C

j

• For short circuit: Soft R
recommended

• Take care of over-voltage caused by
stray inductance

Goff

Characteristics
Symbol Conditions min. typ. max. Unit

IGBT

V

CE(sat)

V

CE0

r

CE

V

GE(th)

I

CES

C

ies

C

oes

C

res

Q
R

Gint

t

d(on)

t

r

E

on

t

d(off)

t

f

E

off

R

th(j-c)

IC=200A
V

=15V

GE

chiplevel

VGE=15V

VGE=VCE, IC=3.2mA 5 5.8 6.5 V

VGE=0V
V

=600V

CE

VCE=25V
V

=0V

GE

G

VGE=- 8 V...+ 15 V
Tj=25°C

VCC= 300 V
I

=200A

C

=4.2Ω

R

G on

R

=4.2Ω

G off

per IGBT 0.21 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

T

=25°C

j

T

= 150 °C

j

f=1MHz
f=1MHz
f=1MHz

T

= 150 °C

j

Tj= 150 °C
Tj= 150 °C
Tj= 150 °C
Tj= 150 °C

Tj= 150 °C

1.45 1.85 V

1.7 2.1 V

0.9 1 V

0.85 0.9 V

2.8 4.3 mΩ

4.3 6.0 mΩ

0.15 0.45 mA
mA

12.3 nF

0.77 nF

0.37 nF

1600 nC

1.00 Ω

65 ns
80 ns

6mJ

545 ns

95 ns

8mJ

GB

© by SEMIKRON Rev. 0 – 16.04.2010 1

SEMiX202GB066HDs

SEMiX® 2s

Trench IGBT Modules

SEMiX202GB066HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•V

• UL recognised file no. E63532

Typical Applications*

• Matrix Converter

• Resonant Inverter

• Current Source Inverter

with positive temperature

CE(sat)

coefficient

Characteristics
Symbol Conditions min. typ. max. Unit

Inverse diode

V

V

r

F

I

RRM

Q

E

R

= V

F

F0

rr

rr

th(j-c)

IF=200A

EC

V

=0V

GE

chip

IF=200A
di/dt

= 3900 A/µs

off

V

=-8V

GE

V

= 300 V

CC

per diode 0.27 K/W

T

=25°C

j

= 150 °C

T

j

Tj=25°C
T

= 150 °C

j

Tj=25°C
T

= 150 °C

j

T

= 150 °C

j

Tj= 150 °C

Tj= 150 °C

1.4 1.60 V

1.4 1.6 V

0.9 1 1.1 V

0.75 0.85 0.95 V

1.5 2.0 2.5 mΩ

2.3 2.8 3.3 mΩ
205 A

28 µC

6.5 mJ

Module

L

CE

R

CC'+EE'

R

th(c-s)

M

s

M

t

=25°C

T

res., terminal-chip

C

T

= 125 °C

C

per module 0.045 K/W
to heat sink (M5) 3 5 Nm

to terminals (M6)

2.5 5 Nm

18 nH

0.7 mΩ
1mΩ

Nm

w 250 g

Temperatur Sensor

R

100

B

100/125

Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
R

T[K];

(T)=R100

exp[B

100/125

(1/T-1/T

100

)];

3550

±2%

K

Remarks

• Case temperature limited to TC=125°C
max.

• Product reliability results are valid for
T

=150°C

j

• For short circuit: Soft R
recommended

• Take care of over-voltage caused by
stray inductance

Goff

GB

2 Rev. 0 – 16.04.2010 © by SEMIKRON